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arXiv:2006.16276

Bright high-purity quantum emitters in aluminium nitride integrated photonics

Tsung‐Ju Lu, Benjamin Lienhard, Kwang‐Yong Jeong, Hyowon Moon, Ava Iranmanesh, Gabriele Grosso, Dirk Englund

Published Jun 29, 2020• 0 citations
arXivHTMLPDF

Abstract

Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding $6 \times 10^{4}$ counts per second (cps) (saturation rate > $8.6 \times 10^{4}$ cps). In an unpatterned thin-film sample, we measure antibunching with $g^{(2)}(0) \sim 0.05$ and photon count rates exceeding $8 \times 10^{5}$ cps (saturation rate > $1 \times 10^{6}$ cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.

DOI
10.48550/arxiv.2006.16276

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Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, the generation and direct integration of QEs in an aluminum nitride-based photonic integrated circuit platform is reported. For individual waveguide-integrated QEs, an off-chip count rate exceeding 6 × 10 4 counts per second (cps; saturation rate >8.6 × 10 4 cps) is measured at room temperature under continuous-wave (CW) excitation. In an unpatterned thin-film sample, antibunching with g (2) (0) ∼ 0.08 and photon count rates exceeding 8 × 10 5 cps (saturation rate >1 × 10 6 cps) are measured at room temperature under CW excitation. Although spin and detailed optical line width measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.
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