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Josephson device for quantum experiments

Carmine Granata, CORATO V., Longobardi L., M. I. RUSSO, B. Ruggiero, P. Silvestrini

Published Jan 1, 2002• 0 citations
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Experiments on Coupled Josephson Junction Devices

A. A. Abdumalikov, Alexey Vladimirovich Ustinov

This report results from a contract tasking University of Erlangen-Nuremberg as follows: The contractor will investigate coupled Josephson devices of two different kinds. First, the contractor will test a new concept of active antennas to couple radiation out from Josephson arrays. Using a mixed series-parallel array-biasing scheme, the contractor will design and perform waveguide-coupled emission experiments with single- and double-row arrays at 80-120 GHz. If successful, this scheme will be further implemented and tested using dipole antennas for the 400-500 GHz range. The contractor will also investigate the loop antenna array scheme as detailed in the technical proposal. The experiments will be done with Nb/Al- AOx/Nb Josephson junction arrays. The second Josephson device to be investigated (including design, fabrication, and testing) are novel q-bit devices. These q-bits are hoped to be more flexible and therefore more suitable hardware for quantum computing than single- loop SQUIDs currently pursued by other researcher groups. Full details are provided in the accompaning technical proposal.

•Jul 15, 2003•0 citations

A model of quantum measurement in Josephson junctions

Roger A. Hegstrom, Fernando Sols

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Switching dynamics of Nb/AlOx/Nb Josephson junctions: Measurements for an experiment of macroscopic quantum coherence

Maria Gabriella Castellano, Roberto Leoni, G. Torrioli +7 more

Josephson junctions based on Nb/AlOx/Nb trilayer technology have demonstrated excellent quality, exhibiting very low dissipation in the subgap region. This property is very important for all those experiments which have to deal with the quantum behavior of macroscopic variables in Josephson devices. In view of performing an experiment of macroscopic quantum coherence with a Josephson device, we measured the escape temperature and the return current of several junctions fabricated with different processes and having different characteristics, by cooling them from 4.2 to 0.3 K. We show that, for what concerns the process of escape from the zero-voltage state, no difference can be found among different junctions. On the other hand, the dissipation properties are strongly influenced by the current density, with lower current density resulting in lower intrinsic dissipation.

Journal of Applied Physics•Sep 1, 1996•30 citations
This report results from a contract tasking University of Erlangen-Nuremberg as follows: The contractor will investigate coupled Josephson devices of two different kinds. First, the contractor will test a new concept of active antennas to couple radiation out from Josephson arrays. Using a mixed series-parallel array-biasing scheme, the contractor will design and perform waveguide-coupled emission experiments with single- and double-row arrays at 80-120 GHz. If successful, this scheme will be further implemented and tested using dipole antennas for the 400-500 GHz range. The contractor will also investigate the loop antenna array scheme as detailed in the technical proposal. The experiments will be done with Nb/Al- AOx/Nb Josephson junction arrays. The second Josephson device to be investigated (including design, fabrication, and testing) are novel q-bit devices. These q-bits are hoped to be more flexible and therefore more suitable hardware for quantum computing than single- loop SQUIDs currently pursued by other researcher groups. Full details are provided in the accompaning technical proposal.
Josephson junctions based on Nb/AlOx/Nb trilayer technology have demonstrated excellent quality, exhibiting very low dissipation in the subgap region. This property is very important for all those experiments which have to deal with the quantum behavior of macroscopic variables in Josephson devices. In view of performing an experiment of macroscopic quantum coherence with a Josephson device, we measured the escape temperature and the return current of several junctions fabricated with different processes and having different characteristics, by cooling them from 4.2 to 0.3 K. We show that, for what concerns the process of escape from the zero-voltage state, no difference can be found among different junctions. On the other hand, the dissipation properties are strongly influenced by the current density, with lower current density resulting in lower intrinsic dissipation.