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Transient quantum transport simulation based on the statistical density matrix

博 水田, hiroshi mizuta

Published Jan 1, 1991• 0 citations
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Basing on our hierarchical equations of motion for time-dependent quantum transport [X. Zheng, G. H. Chen, Y. Mo, S. K. Koo, H. Tian, C. Y. Yam, and Y. J. Yan, J. Chem. Phys. 133, 114101 (2010)], we develop an efficient and accurate numerical algorithm to solve the Liouville-von-Neumann equation. We solve the real-time evolution of the reduced single-electron density matrix at the tight-binding level. Calculations are carried out to simulate the transient current through a linear chain of atoms, with each represented by a single orbital. The self-energy matrix is expanded in terms of multiple Lorentzian functions, and the Fermi distribution function is evaluated via the Padè spectrum decomposition. This Lorentzian-Padè decomposition scheme is employed to simulate the transient current. With sufficient Lorentzian functions used to fit the self-energy matrices, we show that the lead spectral function and the dynamics response can be treated accurately. Compared to the conventional master equation approaches, our method is much more efficient as the computational time scales cubically with the system size and linearly with the simulation time. As a result, the simulations of the transient currents through systems containing up to one hundred of atoms have been carried out. As density functional theory is also an effective one-particle theory, the Lorentzian-Padè decomposition scheme developed here can be generalized for first-principles simulation of realistic systems.
In this review article, we present a non-equilibrium quantum transport theory for transient electron dynamics in nanodevices based on exact Master equation derived with the path integral method in the fermion coherent-state representation. Applying the exact Master equation to nanodevices, we also establish the connection of the reduced density matrix and the transient quantum transport current with the Keldysh nonequilibrium Green functions. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. In applications, we utilize the theory to specific quantum transport systems, a variety of quantum decoherence and quantum transport phenomena involving the non-Markovian memory effect are investigated in both transient and stationary scenarios at arbitrary initial temperatures of the contacts.
In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman–Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.