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arXiv:0910.1675 · New Journal of Physics

Non-equilibrium quantum theory for nanodevices based on the Feynman–Vernon influence functional

Jinshuang Jin, Matisse Wei-Yuan Tu, Wei-Min Zhang, YiJing Yan

Published Aug 6, 2010• 109 citations
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Abstract

In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman–Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.

DOI
10.1088/1367-2630/12/8/083013

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In this paper, we develop a nonperturbation theory for describing decoherence dynamics of electron charges in a double quantum dot gated by electrodes. We extend the Feynman-Vernon influence functional theory to fermionic environments and derive an exact master equation for the reduced density matrix of electrons in the double dot for a general spectral density at arbitrary temperature and bias. We then investigate the decoherence dynamics of the double-dot charge qubit with backreaction of the reservoirs being fully taken into account. Time-dependent fluctuations and leakage effects induced from the dot-reservoir coupling are explicitly explored. The charge qubit dynamics from the Markovian to non-Markovian regime is systematically studied under various manipulating conditions. The decay behavior of charge qubit coherence and the corresponding relaxation time T1{T}_{1}T1​ and dephasing time T2{T}_{2}T2​ are analyzed in detail.
In this article, we report the recent progress on decoherence dynamics of electrons in quantum dot quantum computing systems using the exact master equation we derived recently based on the Feynman–Vernon influence functional approach. The exact master equation is valid for general nanostructure systems coupled to multi-reservoirs with arbitrary spectral densities, temperatures and biases. We take the double quantum dot charge qubit system as a specific example, and discuss in details the decoherence dynamics of the charge qubit under coherence controls. The decoherence dynamics risen from the entanglement between the system and the environment is mainly non-Markovian. We further discuss the decoherence of the double-dot charge qubit induced by quantum point contact (QPC) measurement where the master equation is re-derived using the Keldysh non-equilibrium Green function technique due to the non-linear coupling between the charge qubit and the QPC. The non-Markovian decoherence dynamics in the measurement processes is extensively discussed as well.
A generalized quantum master equation theory that governs the exact, nonperturbative quantum dissipation and quantum transport is formulated in terms of hierarchically coupled equations of motion for an arbitrary electronic system in contact with electrodes under either a stationary or a nonstationary electrochemical potential bias. The theoretical construction starts with the influence functional in path integral, in which the electron creation and annihilation operators are Grassmann variables. Time derivatives on the influence functionals are then performed in a hierarchical manner. Both the multiple-frequency dispersion and the non-Markovian reservoir parametrization schemes are considered for the desired hierarchy construction. The resulting hierarchical equations of motion formalism is in principle exact and applicable to arbitrary electronic systems, including Coulomb interactions, under the influence of arbitrary time-dependent applied bias voltage and external fields. Both the conventional quantum master equation and the real-time diagrammatic formalism of Schon and co-workers can be readily obtained at well defined limits of the present theory. We also show that for a noninteracting electron system, the present hierarchical equations of motion formalism terminates at the second tier exactly, and the Landuer-Buttiker transport current expression is recovered. The present theory renders an exact and numerically tractable tool to evaluate various transient and stationary quantum transport properties of many-electron systems, together with the involving nonperturbative dissipative dynamics.
We present a nonperturbative and formally exact approach for the charge transport in interacting nanojunctions based on a real-time path-integral formulation of the reduced system dynamics. For reservoirs of noninteracting fermions, the exact trace over the leads' degrees of freedom results in the time-nonlocal Feynman-Vernon influence functional, a functional of the Grassmann-valued paths of the nanojunction, which induces correlations among the tunneling transitions in and out of the nanojunction. An expansion of the influence functional in terms of the number of tunneling transitions, and integration of the Grassmann variables between the tunneling times, allows us to obtain a still exact generalized master equation for the populations of the reduced density matrix in the occupation-number representation, as well as a formally exact expression for the current. By borrowing the nomenclature of the famous spin-boson model, we parametrize the two-state dynamics of each single-particle fermionic degree of freedom, in the occupation-number representation, in terms of blips and sojourns. We apply our formalism to the exactly solvable resonant level model (RLM) and to the single-impurity Anderson model (SIAM), the latter being a prototype system for studying strong correlations. For both systems, we demonstrate a hierarchical diagrammatic structure. While the hierarchy closes at the second tier for the RLM, this is not the case for the interacting SIAM. Upon inspection of the current kernel, known results from various perturbative and nonperturbative approximation schemes to quantum transport in the SIAM are recovered. Finally, a noncrossing approximation for the hierarchical kernel is developed, which enables us to systematically decrease temperature at each next level of the approximation. Analytical results for a simplified fourth-tier scheme are presented both in equilibrium and nonequilibrium and with an applied magnetic field.