Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits but state-preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single-qubit readout visibilities $>99\mathrm{%}$, exceeding the threshold for quantum error correction. In the same device, we achieve average single-qubit control fidelities $>99.95\mathrm{%}$. Our results show that silicon spin qubits can be operated with high overall operation fidelity.
We study the performance of supcode---a family of dynamically correcting pulses designed to cancel simultaneously both Overhauser and charge noise for singlet-triplet spin qubits---adapted to silicon devices with electrostatic control. We consider both natural Si and isotope-enriched Si systems, and in each case we investigate the behavior of individual gates under static noise and perform randomized benchmarking to obtain the average gate error under realistic
1/f noise. We find that in most cases supcode pulses offer roughly an order of magnitude reduction in gate error, and especially in the case of isotope-enriched Si, supcode yields gate operations of very high fidelity. We also develop a version of supcode that cancels the charge noise only, ``$\ensuremath{\delta}J$-supcode,'' which is particularly beneficial for isotope-enriched Si devices where charge noise dominates Overhauser noise, offering a level of error reduction comparable to the original supcode while yielding gate times that are
30 shorter. Our results show that the supcode noise-compensating pulses provide a fast, simple, and effective approach to error suppression, bringing gate errors well below the quantum error correction threshold in principle.
A two-qubit controlled-not (cnot) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking the realistic system parameters and the experimental constraints on the control pulses into account, we construct experimentally realizable high-fidelity cnot gates robust against electrical noise with the experimentally measured
1/f1.01 noise spectrum and also against the uncertainty in the interdot tunnel coupling amplitude. Our fine-tuned optimal cnot gate has about two orders of magnitude improvement in gate infidelity over the ideal C-phase gate constructed without considering any noise effect. Furthermore, within the same control framework, high-fidelity and robust single-qubit gates can also be constructed, paving the way for large-scale FTQC.