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Transform-Limited Single Lead-Vacancy Center in Diamond

Peng Wang, Mutsuko Hatano, Takayuki Iwasaki

Published Mar 1, 2023• 0 citations
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Transform-limited photon emission from quantum emitters is essential for high-fidelity entanglement generation. In this Letter, we report the coherent optical property of a single negatively charged lead-vacancy (PbV) center in diamond. Photoluminescence excitation measurements reveal stable fluorescence with a linewidth of 39 MHz at 6 K, close to the transform limit estimated from the lifetime measurement. We observe 4 orders of magnitude different linewidths of the two zero-phonon lines, and find that the phonon-induced relaxation in the ground state contributes to this huge difference in the linewidth. Because of the suppressed phonon absorption in the PbV center, we observe nearly transform-limited photon emission up to 16 K, demonstrating its high temperature robustness compared to other color centers in diamond.

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A negatively charged lead-vacancy (PbV-) center in diamond is a novel quantum system which can be operated at a high temperature above 4 K owing to its large ground state splitting. To unlock the quantum properties of the PbV- center, the enhancement of the fluorescence intensity is a key issue. Here, we demonstrate enhanced emission from PbV- centers by a factor of approximately 10 using solid immersion lenses (SILs) fabricated on rough diamond surface caused by high-temperature anneal over 2000°C. Resonant excitation reveals the narrow emission close to the transform-limited linewidth. Furthermore, we demonstrate two-photon interference using one single PbV- center in an SIL. This enhanced emission and indistinguishability will lead to further development of the PbV- center towards quantum network node applications.

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The silicon vacancy center in diamond

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Transform-limited photon emission from quantum emitters is essential for high-fidelity entanglement generation. In this Letter, we report the coherent optical property of a single negatively charged lead-vacancy (PbV) center in diamond. Photoluminescence excitation measurements reveal stable fluorescence with a linewidth of 39 MHz at 6 K, close to the transform limit estimated from the lifetime measurement. We observe 4 orders of magnitude different linewidths of the two zero-phonon lines, and find that the phonon-induced relaxation in the ground state contributes to this huge difference in the linewidth. Because of the suppressed phonon absorption in the PbV center, we observe nearly transform-limited photon emission up to 16 K, demonstrating its high temperature robustness compared to other color centers in diamond.
A negatively charged lead-vacancy (PbV-) center in diamond is a novel quantum system which can be operated at a high temperature above 4 K owing to its large ground state splitting. To unlock the quantum properties of the PbV- center, the enhancement of the fluorescence intensity is a key issue. Here, we demonstrate enhanced emission from PbV- centers by a factor of approximately 10 using solid immersion lenses (SILs) fabricated on rough diamond surface caused by high-temperature anneal over 2000°C. Resonant excitation reveals the narrow emission close to the transform-limited linewidth. Furthermore, we demonstrate two-photon interference using one single PbV- center in an SIL. This enhanced emission and indistinguishability will lead to further development of the PbV- center towards quantum network node applications.