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Charging and interference effects in the superconnducting SET transistor with ring-shaped island

克信 青柳, Yoshinobu Aoyagi

Published Jan 1, 1988• 0 citations
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Charging and interference effects in the superconducting SET transistor with ring-shaped island

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•Jan 1, 1998•0 citations

Superconducting single-electron transistor coupled to a two dimensional electron gas: Transmission lines, dissipation, and charge averaging

A. J. Rimberg, Wei Dong Lu

We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze our results, we have developed a model of the environment for S-SET/2DEG systems that includes electromagnetic fluctuations coupled both through the S-SET leads and capacitively to the S-SET central island. We analyze this model, treating the leads as finite transmission lines, to find the probability function P(E) for exchanging energy E with the environment. We also allow for the possibility of low-frequency fluctuations of the S-SET offset charge. We compare our calculations with measurements of SET conductance versus 2DEG conductance and find good agreement for temperatures 100 mK, while unexplained discrepancies emerge for lower temperatures. By including the effects of charge averaging we are also able to predict the shape and evolution of IV curves as the 2DEG in the vicinity of the S-SET is changed.

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We present results on a double-island single-electron transistor (DISET) operated at radio frequency (rf) for the fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity, we compare a DISET to a conventional single-electron transistor (SET). We find that a DISET can be more sensitive than a SET for identical, minimum device resistances in the Coulomb blockade regime. This is of particular importance for rf operation, where ideal impedance matching to 50-Ω transmission lines is only possible for a limited range of device resistances. We report a charge sensitivity of 5.6×10−6e∕Hz for a rf-DISET, together with a demonstration of the single-shot detection of small (⩽0.1e) charge signals on microsecond time scales.

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Single-Electron Transistors with Superconducting Islands of Different Lengths.

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APS•Mar 1, 1996•0 citations

Superconducting single-charge transistor in a tunable dissipative environment

Frank K. Wilhelm, Gerd Schön, Gergely T. Zimányi

Physica B Condensed Matter•Jul 1, 2000•1 citation
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze our results, we have developed a model of the environment for S-SET/2DEG systems that includes electromagnetic fluctuations coupled both through the S-SET leads and capacitively to the S-SET central island. We analyze this model, treating the leads as finite transmission lines, to find the probability function P(E) for exchanging energy E with the environment. We also allow for the possibility of low-frequency fluctuations of the S-SET offset charge. We compare our calculations with measurements of SET conductance versus 2DEG conductance and find good agreement for temperatures 100 mK, while unexplained discrepancies emerge for lower temperatures. By including the effects of charge averaging we are also able to predict the shape and evolution of IV curves as the 2DEG in the vicinity of the S-SET is changed.
We present results on a double-island single-electron transistor (DISET) operated at radio frequency (rf) for the fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity, we compare a DISET to a conventional single-electron transistor (SET). We find that a DISET can be more sensitive than a SET for identical, minimum device resistances in the Coulomb blockade regime. This is of particular importance for rf operation, where ideal impedance matching to 50-Ω transmission lines is only possible for a limited range of device resistances. We report a charge sensitivity of 5.6×10−6e∕Hz for a rf-DISET, together with a demonstration of the single-shot detection of small (⩽0.1e) charge signals on microsecond time scales.