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Trapped and cooled 88Sr+ ions in a cylindrical potential provided by a micro-fabricated ring trap

L. Desormeaux, Théo Henner, J.-P. Likforman, Luca Guidoni, Peng Zhao, Yu Dian Lim, Chuan Seng Tan, Hong Yu Li

Published Apr 30, 2024• 0 citations
OpenAlex

Abstract

Laser-cooled trapped ions platform is one of the best candidates for the development of future quantum computing. This has generated a worldwide research effort for scaling and integrating trapping devices. As part of this effort, we are developping cylindrically symmetrical linear Paul traps manufactured in collaboration with Nanyang Technology University and the Microelectronics Institute of Singapore. The electrical contacts of these traps electrodes are made through the Silicon substrate (TSV: through silicon vias), allowing not to break the desired symmetry with surface connections. The trapping and laser cooling of ions in ring traps was demonstrated at Garching [2] and subsequently extended to microfabricated traps at Sandia National Labs [3] and Berkeley [4]. In the absence of defects, these devices enable rotational symmetry for the trapped ions. They are also candidates for manipulating the rotational quantum state of trapped ion ensembles [4].We will present our results concerning the performance of TSV surface ring traps manufactured in Singapore. In particular, we loaded these traps with Doppler-cooled 88Sr+ ions and we estimate the defects of the trapping potential with respect to perfect rotational symmetry. The application of DC voltages to a set of segmented electrodes makes it possible to compensate for most of these defects for observing sub milikelvin free motion.[1] P. Zhao et al., Appl. Phys. Lett. 118, 124003 (2021).[2] I. Waki et al.,Phys. Rev. Lett. 68, 2007 (1992).[3] B. Tabakov et al., Phys. Rev. Applied 4, 031001 (2015). [4] E. Urban et al., Phys. Rev. Lett. 123, 133202 (2019)

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Session II / Quantum Information & Computing Trapped and cooled 88Sr+ ions in a cylindrical potential provided by a micro-fabricated ring trap

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Laser-cooled trapped ions platform is one of the best candidates for the development of future quantum computing. This has generated a major worldwide research effort aimed at scaling and integrating trapping devices. As part of this effort, we are developing miniature atomic ion traps in the laboratory: Paul linear surface traps manufactured in collaboration with Nanyang Technology University and the Microelectronics Institute of Singapore. An original feature of the manufacturing process is that all the electrical contacts of the trap electrodes are made through the Silicon substrate (TSV: through silicon vias). In this way, the wire-bondings usually soldered directly to the electrodes can be offset or completely eliminated [1]. This opens the way to complex architectures, in particular cylindrically symmetrical ring traps, which cannot be made with surface connections that would break the desired symmetry. The trapping and laser cooling of ions in cylindrically symmetrical linear Paul traps (called "ion storage rings" in their macroscopic version, diameters of around 100 mm) was demonstrated in pioneering work at Garching [2] and subsequently extended to microfabricated traps (multilayer technology) at Sandia National Labs (diameter 2.5 mm) [3] and Berkeley (diameter 95 μm) [4]. These devices are of interest because, in the absence of defects, they enable rotational symmetry for the trapped ions and thus periodic boundary conditions for the confined cold ion system (Coulomb crystal). They are also candidates for observing and manipulating the rotational quantum state of trapped ion ensembles [4]. We will present our latest results concerning the performance of TSV surface ring traps (diameters between 150 and 210 μm) manufactured in Singapore. In particular, we loaded these traps with Dopplercooled 88Sr+ ions (from a single ion to several hundreds). Laser cooling and image acquisition enable us to estimate the defects of the trapping potential with respect to perfect rotational symmetry. The application of DC voltages to a set of segmented electrodes then makes it possible to compensate for most of these defects, which nevertheless remain the major problem to be solved in order to achieve sub milikelvin free motion.

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Laser-cooled trapped ions platform is one of the best candidates for the development of future quantum computing. This has generated a worldwide research effort for scaling and integrating trapping devices. As part of this effort, we are developping cylindrically symmetrical linear Paul traps manufactured in collaboration with Nanyang Technology University and the Microelectronics Institute of Singapore. The electrical contacts of these traps electrodes are made through the Silicon substrate (TSV: through silicon vias), allowing not to break the desired symmetry with surface connections. The trapping and laser cooling of ions in ring traps was demonstrated at Garching [2] and subsequently extended to microfabricated traps at Sandia National Labs [3] and Berkeley [4]. In the absence of defects, these devices enable rotational symmetry for the trapped ions. They are also candidates for manipulating the rotational quantum state of trapped ion ensembles [4].We will present our results concerning the performance of TSV surface ring traps manufactured in Singapore. In particular, we loaded these traps with Doppler-cooled 88Sr+ ions and we estimate the defects of the trapping potential with respect to perfect rotational symmetry. The application of DC voltages to a set of segmented electrodes makes it possible to compensate for most of these defects for observing sub milikelvin free motion.[1] P. Zhao et al., Appl. Phys. Lett. 118, 124003 (2021).[2] I. Waki et al.,Phys. Rev. Lett. 68, 2007 (1992).[3] B. Tabakov et al., Phys. Rev. Applied 4, 031001 (2015). [4] E. Urban et al., Phys. Rev. Lett. 123, 133202 (2019)
Laser-cooled trapped ions platform is one of the best candidates for the development of future quantum computing. This has generated a major worldwide research effort aimed at scaling and integrating trapping devices. As part of this effort, we are developing miniature atomic ion traps in the laboratory: Paul linear surface traps manufactured in collaboration with Nanyang Technology University and the Microelectronics Institute of Singapore. An original feature of the manufacturing process is that all the electrical contacts of the trap electrodes are made through the Silicon substrate (TSV: through silicon vias). In this way, the wire-bondings usually soldered directly to the electrodes can be offset or completely eliminated [1]. This opens the way to complex architectures, in particular cylindrically symmetrical ring traps, which cannot be made with surface connections that would break the desired symmetry. The trapping and laser cooling of ions in cylindrically symmetrical linear Paul traps (called "ion storage rings" in their macroscopic version, diameters of around 100 mm) was demonstrated in pioneering work at Garching [2] and subsequently extended to microfabricated traps (multilayer technology) at Sandia National Labs (diameter 2.5 mm) [3] and Berkeley (diameter 95 μm) [4]. These devices are of interest because, in the absence of defects, they enable rotational symmetry for the trapped ions and thus periodic boundary conditions for the confined cold ion system (Coulomb crystal). They are also candidates for observing and manipulating the rotational quantum state of trapped ion ensembles [4]. We will present our latest results concerning the performance of TSV surface ring traps (diameters between 150 and 210 μm) manufactured in Singapore. In particular, we loaded these traps with Dopplercooled 88Sr+ ions (from a single ion to several hundreds). Laser cooling and image acquisition enable us to estimate the defects of the trapping potential with respect to perfect rotational symmetry. The application of DC voltages to a set of segmented electrodes then makes it possible to compensate for most of these defects, which nevertheless remain the major problem to be solved in order to achieve sub milikelvin free motion.
In this study, we report about the design, fabrication, and operation of a Cu-filled through-silicon via (TSV)-integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between an ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrode numbers and evolving complexity. The integration of TSVs reduces the form factor of the ion trap by more than 80%, minimizing parasitic capacitance from 32 ± 2 to 3 ± 0.2 pF. A low RF dissipation is achieved in spite of the absence of the ground screening layer. The entire fabrication process is on a 12-in. wafer and compatible with the established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both the heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (∼30 min) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
Ion traps are a foundational technology in quantum information processing, precision spectroscopy and foundational physics tests. At the heart of their performance is the inhibition of micromotion, an oscillation of ions through imperfect trapping potentials, that restricts the laser cooling efficiency, coherence times, and the accuracy of measurements. The paper provides a systematic computational analysis of four different electrode geometries (Linear Paul, Segmented, Surface and Ring) in 24 different RF / DC configurations (C01-C24) and 13 performance parameters that comprise trap depth (0.62 1.48 eV), radial secular frequency (1,100 1 Multi-objective optimization with weighted scoring of these metrics indicates that Ring trap geometry scores the highest total (80.2/100), followed by Linear Paul (72.0), Segmented (67.0) and Surface (55.1) configurations. ANOVA (one-way) statistically verified the presence of statistically significant inter-geometry differences in micro-motions amplitude (F = 18.43, p < .001) and cooling efficiency (F = 22.17, p < .001), with Tukey HSD post-hoc revealed that the most significant difference was between the Ring and the Surface. The Pearson correlation analysis shows that RF drive voltage and micromotion amplitude (r = -0.94 to -0.99) and cooling efficiency and micromotion (r = -1.00) have near-perfect inverse correlations, which prove that the quality of confinement is regulated by electrode geometry, RF amplitude, and spacing. These results give quantitative design principles of next-generation ion traps in quantum computing and atomic clock. Keywords: ion trap, micromotion minimization, RF/DC electrode optimization, laser cooling, Mathieu stability, secular frequency, quantum computing
We have developed a trapped ion system for producing two-dimensional (2D) ion crystals for applications in scalable quantum computing, quantum simulations, and 2D crystal phase transition and defect studies. The trap is a modification of a Paul trap with its ring electrode flattened and split into eight identical sectors and its two endcap electrodes shaped as truncated hollow cones for laser and imaging optics access. All ten trap electrodes can be independently DC-biased to create various aspect ratio trap geometries. We trap and Doppler cool 2D crystals of up to 30 Ba+ ions and demonstrate the tunability of the trapping potential both in the plane of the crystal and in the transverse direction.