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High-Density NV Ensemble Produced by Electron Irradiation of Ultra High-Concentration Nitrogen-Doped CVD Diamond

Kyosuke Hayasaka, Mayu Ueda, Kyotaro Kanehisa, Kazuki Otani, Yuki Ueda, Takashi Tanii, Taisuke Kageura, Onoda Shinobu, 心平 榎本, Shozo Kono, Hiroshi Kawarada

Published Nov 29, 2022• 0 citations
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Abstract

「 High-Density NV Ensemble Produced by Electron Irradiation of Ultra High-Concentration Nitrogen-Doped CVD Diamond」に関する発表

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We systematically investigate the NV center creation and properties in bulk chemical vapor deposition (CVD) diamond, throughout growth, electron-beam irradiation, and annealing steps. We study diamond series grown with a varying nitrogen flow over 4 orders of magnitude, resulting in a broad range of single substitutional nitrogen (P1 center) densities from 0.2 to 20 ppm. We investigate in-situ P1 and NV creations, as well as NV charge states distributions. As the next step, we optimize electron-irradiation fluences for a fixed nitrogen concentration, with two different accelerated electron energies. We bring up a general approach to determine the optimal irradiation conditions, and discuss criteria for P1 to NV conversion ratios in the context of stable NV charge states. Through all these optimizations, we enhance the NV- concentration remarkably in our CVD diamond samples, without sacrificing their Hahn-echo coherence time T2. We achieve NV concentrations from 1 to 168 ppb with T2 from 549 to 45.5 µs respectively. This study shows a pathway to engineer targeted, optimized properties of NV-ensembles in bulk CVD diamonds for improved sensitivity.