The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 1019 cm−3. The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.
Here, we report the fabrication and characterization of single crystal diamond films on a two-inch wafer-scale containing three-dimensional layered structures of negatively charged nitrogen-vacancy color centers (NV
−). The (100)-oriented layered diamond films were grown by chemical vapor deposition (CVD) to create spatially separated regions of enhanced emission associated with NV
− centers. Such localized emission enhancement as well as 2D and 3D arrays of spins could enable close-packed architectures for emerging quantum devices, such as data processors, memory cells, and magnetic sensors. A cyclic sequence of CVD growth and oxygen-plasma etching is employed, resulting in the in-situ formation of layered inverted pyramidal structures with flat $\{
111\}$ sidewalls. These pits are subsequently overgrown by nitrogen-doped diamond to achieve NV
−-rich facets with a uniform N-V bond arrangement and improved nitrogen incorporation efficiency.