Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Advanced Science

Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond

Ilia Chuprina, Gergő Thiering, Emilie Bourgeois, Anna Ermakova, Dmitry Budker, Ádám Gali, Miloš Nesládek, Petr Siyushev, Fedor Jelezko

Published Aug 6, 2026• 0 citations
Publisher

Abstract

The investigation of optically active point defects in wide-bandgap semiconductors is driven by the development of solid-state quantum technologies. Such atom-like defects are used for the realization of quantum registers and quantum sensors. Reproducible engineering of even well-established defects with predictable properties remains challenging, as the local environment and complex charge dynamics limit their performance and applicability. Furthermore, not all defects are optically accessible, which hinders our ability to study them. Here, we use the photoelectric detection technique to study switching and control of desired double and single charge states of silicon vacancy (SiV) defect in diamond. We demonstrate the first direct imaging of the dark charge state of SiV, which cannot be addressed by optical methods or electron paramagnetic resonance. We discuss a model for SiV charge state conversion involving proximal substitutional nitrogen defects. These findings are important for the charge state control of the entire family of group-IV defects in diamond.

DOI
10.1002/advs.76933

Related papers

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Manuel Rieger, Viviana Villafañe, Lina M. Todenhagen +5 more

Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications in photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multiqubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photocurrent spectroscopy. We controllably convert the charge state between the optically active SiV − and dark SiV 2− with megahertz rates and >90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV − photoluminescence under hole capture, measure the intrinsic conversion time from the dark SiV 2− to the bright SiV − to be 36.4(67) ms, and demonstrate how it can be enhanced by a factor of 10 5 via optical pumping. Moreover, we obtain previously unknown information on the defects that contribute to photoconductivity, indicating the presence of substitutional nitrogen and divacancies.

arXiv:2310.12288•Science Advances•Feb 21, 2024•18 citations

Probing Charge Dynamics in Diamond with an Individual Color Center

Aedan Robert Gardill, Ishita Kemeny, Matthew Carl Cambria +6 more

Control over the charge states of color centers in solids is necessary to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-band-gap semiconductors are complex, and much remains unknown. We utilize a single-shot charge-state readout of an individual nitrogen-vacancy (NV) center to probe the charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many micrometers away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV 2– . These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers and provide a novel way to probe and control charge dynamics in diamond.

arXiv:2106.05405•Nano Letters•Aug 2, 2021•20 citations

Photoelectric Detection of Nitrogen‐Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

Emilie Bourgeois, Josef Soucek, Jaroslav Hrubý +2 more

Abstract The photoelectric detection of nitrogen‐vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid‐state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin‐state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin‐state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor‐type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low‐energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.

Advanced Quantum Technologies•Mar 17, 2022•11 citations

Long‐Lived SiV − Center Induced by Nanosecond High‐Voltage Pulse Discharge

Helen Highland, Yifan Song, Sina Ilkhani +4 more

ABSTRACT Defect and impurity centers in diamond can exist in multiple charge states. A notable example is a negatively and neutrally charged nitrogen‐vacancy center in diamond, whose optical and spin properties are very different. Recent DFT studies show that an energetically favorable charge state can be controlled by adjusting the chemical potential of the diamond sample, which often requires significant materials engineering. This study presents an alternative approach for the control of charge states with the use of nanosecond high‐voltage pulse discharges. We demonstrate the control of silicon‐vacancy (SiV) centers in diamond. Using time‐resolved photoluminescence (PL) spectroscopy measurement of the SiV centers with the application of nanosecond high‐voltage pulses, we show the emergence of the negatively charged SiV − state. We also employ the time‐resolved PL measurements and show that the population of the induced SiV − charge state decays exponentially, and the lifetime of the charge state is determined by 200–1100 ms. The observed long‐lived charge state is potentially useful for applications based on the SiV − center. This method also paved the way to access various charge states of defect and impurity centers in diamond and wide‐bandgap semiconductors.

Advanced Optical Materials•Feb 3, 2026•1 citation

Rapid, in Situ Neutralization of Nitrogen- and Silicon-Vacancy Centers in Diamond Using Above-Band Gap Optical Excitation

Christian Pederson, Nicholas Yama, Lane Beale +3 more

The charge state of a quantum point defect in a solid-state host strongly determines its optical and spin characteristics. Consequently, techniques for controlling the charge state are required to realize technologies for quantum networking and sensing. In this work, we demonstrate the use of deep-ultraviolet (DUV) radiation to dynamically neutralize nitrogen- (NV) and silicon-vacancy (SiV) centers. We first examine the neutralization of NV by correlating the NV – and NV 0 spectra, indicating > 99% polarization into NV 0 . We then examine the time dynamics of SiV – photoluminescence, observing an 80% reduction of intensity within a single 100 μs DUV pulse. Finally, we demonstrate that this DUV-induced bleaching is accompanied by a dramatic increase in the SiV 0 population that is robust to extended periods of near-infrared excitation. Our results indicate the potential of above-band gap excitation as a universal means of generating neutral charge states of quantum point defects on demand.

arXiv:2408.16921•Nano Letters•Dec 31, 2024•8 citations

Photoelectric Detection and Quantum Readout of Nitrogen‐Vacancy Center Spin States in Diamond

Emilie Bourgeois, Michal Gulka, Miloš Nesládek

Abstract A novel method for reading out the electron spin state of the negatively charged nitrogen‐vacancy (NV) point defect in diamond, based on photoelectric detection of NV magnetic resonances (PDMR), is reviewed. As a convenient way to measure the spin state of qubits, the presented technique is anticipated to lead to a vast range of applications in the field of quantum technologies. It has been demonstrated that this method can be used both in continuous‐wave mode and for the pulse readout of coherently manipulated NV− spins. The PDMR technique presents interesting advantages over the commonly used optical detection of magnetic resonances (ODMR) and was recently downscaled to the reading out of a single NV− spin qubit. The principles, current developments, advantages, and drawbacks of PDMR are presented in this progress report. A complete to‐date methodology of NV photoelectric readout is described and PDMR is compared to ODMR. Future developments and possible improvements of the technique are mentioned. The results of the latest studies, aiming at overcoming limitations in the PDMR contrast through a better understanding of NV photo‐physics and of charge exchanges between NV centers and other electrically active defects, are discussed.

Advanced Optical Materials•Apr 20, 2020•58 citations
The investigation of optically active point defects in wide-bandgap semiconductors is driven by the development of solid-state quantum technologies. Such atom-like defects are used for the realization of quantum registers and quantum sensors. Reproducible engineering of even well-established defects with predictable properties remains challenging, as the local environment and complex charge dynamics limit their performance and applicability. Furthermore, not all defects are optically accessible, which hinders our ability to study them. Here, we use the photoelectric detection technique to study switching and control of desired double and single charge states of silicon vacancy (SiV) defect in diamond. We demonstrate the first direct imaging of the dark charge state of SiV, which cannot be addressed by optical methods or electron paramagnetic resonance. We discuss a model for SiV charge state conversion involving proximal substitutional nitrogen defects. These findings are important for the charge state control of the entire family of group-IV defects in diamond.
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications in photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multiqubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photocurrent spectroscopy. We controllably convert the charge state between the optically active SiV − and dark SiV 2− with megahertz rates and >90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV − photoluminescence under hole capture, measure the intrinsic conversion time from the dark SiV 2− to the bright SiV − to be 36.4(67) ms, and demonstrate how it can be enhanced by a factor of 10 5 via optical pumping. Moreover, we obtain previously unknown information on the defects that contribute to photoconductivity, indicating the presence of substitutional nitrogen and divacancies.
Control over the charge states of color centers in solids is necessary to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-band-gap semiconductors are complex, and much remains unknown. We utilize a single-shot charge-state readout of an individual nitrogen-vacancy (NV) center to probe the charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many micrometers away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV 2– . These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers and provide a novel way to probe and control charge dynamics in diamond.
Abstract The photoelectric detection of nitrogen‐vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid‐state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin‐state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin‐state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor‐type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low‐energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.
ABSTRACT Defect and impurity centers in diamond can exist in multiple charge states. A notable example is a negatively and neutrally charged nitrogen‐vacancy center in diamond, whose optical and spin properties are very different. Recent DFT studies show that an energetically favorable charge state can be controlled by adjusting the chemical potential of the diamond sample, which often requires significant materials engineering. This study presents an alternative approach for the control of charge states with the use of nanosecond high‐voltage pulse discharges. We demonstrate the control of silicon‐vacancy (SiV) centers in diamond. Using time‐resolved photoluminescence (PL) spectroscopy measurement of the SiV centers with the application of nanosecond high‐voltage pulses, we show the emergence of the negatively charged SiV − state. We also employ the time‐resolved PL measurements and show that the population of the induced SiV − charge state decays exponentially, and the lifetime of the charge state is determined by 200–1100 ms. The observed long‐lived charge state is potentially useful for applications based on the SiV − center. This method also paved the way to access various charge states of defect and impurity centers in diamond and wide‐bandgap semiconductors.
The charge state of a quantum point defect in a solid-state host strongly determines its optical and spin characteristics. Consequently, techniques for controlling the charge state are required to realize technologies for quantum networking and sensing. In this work, we demonstrate the use of deep-ultraviolet (DUV) radiation to dynamically neutralize nitrogen- (NV) and silicon-vacancy (SiV) centers. We first examine the neutralization of NV by correlating the NV – and NV 0 spectra, indicating > 99% polarization into NV 0 . We then examine the time dynamics of SiV – photoluminescence, observing an 80% reduction of intensity within a single 100 μs DUV pulse. Finally, we demonstrate that this DUV-induced bleaching is accompanied by a dramatic increase in the SiV 0 population that is robust to extended periods of near-infrared excitation. Our results indicate the potential of above-band gap excitation as a universal means of generating neutral charge states of quantum point defects on demand.
Abstract A novel method for reading out the electron spin state of the negatively charged nitrogen‐vacancy (NV) point defect in diamond, based on photoelectric detection of NV magnetic resonances (PDMR), is reviewed. As a convenient way to measure the spin state of qubits, the presented technique is anticipated to lead to a vast range of applications in the field of quantum technologies. It has been demonstrated that this method can be used both in continuous‐wave mode and for the pulse readout of coherently manipulated NV− spins. The PDMR technique presents interesting advantages over the commonly used optical detection of magnetic resonances (ODMR) and was recently downscaled to the reading out of a single NV− spin qubit. The principles, current developments, advantages, and drawbacks of PDMR are presented in this progress report. A complete to‐date methodology of NV photoelectric readout is described and PDMR is compared to ODMR. Future developments and possible improvements of the technique are mentioned. The results of the latest studies, aiming at overcoming limitations in the PDMR contrast through a better understanding of NV photo‐physics and of charge exchanges between NV centers and other electrically active defects, are discussed.