Active Nonlinear Lithium Niobate Photonic Engines for Scalable Control of Defects in Diamond
Yongchan Park, Yong-Soo Lee, Hansol Kim, Junhyung Lee, Hye-yoon Jeon, Hyeong‐Soon Jang, Jaepil Park, Yong-Gwon Kim, Hyeon Hwang, Min‐Kyo Seo, Hojoong Jung, Dongyeon Daniel Kang, Hyounghan Kwon
We demonstrate milliwatt-level green light generation and electro-optic switching with 52.7 dB extinction ratio in lithium niobate. These results experimentally realize quantum control of nitrogen-vacancy centers in diamond, showing potentials in next-generation diamond-based quantum system.
Integrated visible photonic engines for solid-state quantum defects provide a foundation for scalable quantum networks. While miniaturization is advancing, active manipulation remains limited by the difficulty of achieving simultaneous milliwatt-scale visible light generation and high-contrast modulation. Despite extensive efforts, the concurrent chip-scale realization of nonlinear frequency conversion and fast temporal gating for high-fidelity quantum control has remained elusive. Here, we demonstrate a monolithic thin-film lithium niobate (TFLN) platform integrating periodically poled frequency conversion with GHz-bandwidth electro-optic (EO) switching. The device delivers off-chip green-light power exceeding 1 mW with an extinction ratio (ER) of 42.2 dB, enabling coherent spin control and time-resolved lifetime measurements of individual nitrogen-vacancy (NV) centers in diamond through nanosecond gating. System performance is validated through pulsed optically detected magnetic resonance (ODMR), Rabi oscillations, and Ramsey interference, supported by time-tagged photon counting with nanosecond resolution. By unifying sufficient nonlinear light generation with high-speed active manipulation, this platform establishes a scalable framework for the realization of high-rate quantum communication nodes.
The realization of quantum networks capable of distributing quantum information over kilometer scale distances is key to maximizing the potential of quantum information technology. Implementing this technology requires both the ability to generate remote entanglement between quantum memory nodes, requiring an efficient spin-photon interface, and the ability to efficiently scale the classical optical control and multiplexing optics within a given node. In this work, we develop integrated photonics platforms in diamond and thin film lithium niobate to address both of these issues. Together, these platforms provide the necessary ingredients to create large scale quantum networking technology. For the quantum network nodes, we extend previous results combining diamond nanophotonic resonators with the silicon-vacancy defect as a quantum networking platform. We demonstrate, for the first time, quantum entanglement between SiV quantum memories across 35km in a deployed fiber network. We also develop additional functionalities within the SiV platform including the incorporation of deterministic strain to increase defect yield and deterministic single photon generation with the SiV. In order to enable the scalable control and multiplexing of individual SiV centers necessary for realizing practical quantum network nodes, we develop a state-of-the-art electro-optics platform operating at visible wavelengths using thin film lithium niobate. We develop an understanding of fabrication induced losses at visible wavelengths in the platform and a variety of key devices in the platform including high-bandwidth, low-drive voltage amplitude and phase modulators, as well as high-efficiency off chip couplers. Utilizing this platform we perform ultra-high efficiency electro-optic frequency shifting, achieving a 15 GHz frequency shift with over 50% efficiency. Finally, using our measured device performance, we discuss and model how these devices can effectively multiplex SiV-based quantum nodes. Thus through these two platforms we have demonstrated the necessary ingredients to realize large-scale quantum network nodes.
Diamond photonics has enabled efficient interfaces for quantum memories and is predicted to be a critical component of quantum networks. However, scalable network architectures require spatial, temporal, and spectral control of photons, which relies on nonlinear and electro-optic functionalities that diamond alone cannot provide. Here, we demonstrate heterogeneous integration of a thin-film lithium niobate (TFLN) platform, which has strong chi-2 nonlinearity and electro-optic effects, with thin diamond films. We demonstrate high-Q diamond photonic crystal cavities (Q factors exceeding 5x10^4 at 735 nm) that are lithographically aligned with TFLN photonic backbone and critically coupled to it. This allows us to realize low-loss diamond-TFLN "escalators" (loss ~1 dB/coupler) that support efficient light transfer between them. At cryogenic temperatures (5K), we can collect photons emitted from silicon vacancies (SiVs) embedded within the diamond structure via the TFLN photonic circuit. This approach establishes a scalable route toward integrated photonic circuits for practical quantum networking and other technologies.
On-chip photonic quantum circuits with integrated quantum memories have the potential to radically advance hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories as they combine long storage times with excellent optical emission properties and an optically addressable spin state. However, as a material, diamond lacks the many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically poled quasi-phase matching. Here, we present the highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90% transmission efficiency between the diamond nanobeam and the TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we estimate a more than 10-fold increase in photon emission channeled into TFLN waveguides versus that channeled into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.
Diamond's unique physical properties make it a versatile material for a wide range of nonlinear and quantum photonic technologies. However, unlocking diamond's full potential as a nonlinear photonic material with nonzero second-order susceptibility, χ^{(2)}≠0, requires symmetry breaking. In this Letter, we use a nanoscale cavity to demonstrate second-harmonic generation (SHG) in diamond, and demonstrate, for the first time, that the magnitude of diamond's effective χ^{(2)} strongly depends on the electronic configuration of defects in the diamond crystal, such as nitrogen-vacancy centers. The modification of χ^{(2)} arises from photoionization from the negative to neutral charge state, and is manifested by quenching of SHG upon green illumination. Toggling the green illumination allows for optical switching of the device's χ^{(2)}. Optical control of χ^{(2)} by defect engineering opens the door for second-order nonlinear processes in diamond.
Quantum technologies have surpassed classical systems by leveraging the unique properties of superposition and entanglement in photons and matter. Recent advancements in integrated quantum photonics, especially in silicon-based and lithium niobate platforms, are pushing the technology toward greater scalability and functionality. Silicon circuits have progressed from centimeter-scale, dual-photon systems to millimeter-scale, high-density devices that integrate thousands of components, enabling sophisticated programmable manipulation of multi-photon states. Meanwhile, lithium niobate, thanks to its wide optical transmission window, outstanding nonlinear and electro-optic coefficients, and chemical stability, has emerged as an optimal substrate for fully integrated photonic quantum chips. Devices made from this material exhibit high efficiency in in generating, manipulating, converting, storing, and detecting photon states, thereby establishing a basis for deterministic multi-photon generation and single-photon quantum interactions, as well as comprehensive frequency-state control. This review explores the development of integrated photonic quantum technologies based on both silicon and lithium niobate, highlighting invaluable insights gained from silicon-based systems that can assist the scaling of lithium niobate technologies. It examines the functional integration mechanisms of lithium niobate in electro-optic tuning and nonlinear energy conversion, showcasing its transformative impact throughout the photonic quantum computing process. Looking ahead, we speculate on the developmental pathways for lithium niobate platforms and their potential to revolutionize areas such as quantum communication, complex system simulation, quantum sampling, and optical quantum computing paradigms.