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Proceedings of NAS RA Physics

Лазерно-индуцированная флуоресценция в тонких и плотных атомарных парах Cs

Armen D. Sargsyan, David G. Sarkisyan

Published Jul 27, 2026• 0 citations
Publisher

Abstract

Laser-induced fluorescence (LIF) was studied in the 400–1000 nm wavelength range using narrow-band 852 nm laser radiation resonant with Cs atomic 6S1/2→6P3/2 transition. Tshaped cells made entirely of technical sapphire with thicknesses of L = 1 cm, 40 μm, and ~400 nm, containing cesium atomic vapor, were used. It was shown that with decreasing cell thickness (from centimeter to nanometer thicknesses), many LIF signals are suppressed due to an increase in the number of atomic collisions with the walls, leading to quenching of excited states. By recording the LIF signal, it is also possible to estimate the amount of residual Rb atomic vapor (if any exists) in the Cs-containing cell. The Cs vapor cell can serve as an efficient optical frequency converter filter and have also other applications.

DOI
10.54503/0002-3035-2026-61.2-201

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Laser-induced fluorescence (LIF) was studied in the 400–1000 nm wavelength range using narrow-band 852 nm laser radiation resonant with Cs atomic 6S1/2→6P3/2 transition. Tshaped cells made entirely of technical sapphire with thicknesses of L = 1 cm, 40 μm, and ~400 nm, containing cesium atomic vapor, were used. It was shown that with decreasing cell thickness (from centimeter to nanometer thicknesses), many LIF signals are suppressed due to an increase in the number of atomic collisions with the walls, leading to quenching of excited states. By recording the LIF signal, it is also possible to estimate the amount of residual Rb atomic vapor (if any exists) in the Cs-containing cell. The Cs vapor cell can serve as an efficient optical frequency converter filter and have also other applications.
Laser-induced fluorescence (LIF) was studied in the 400–1000 nm wavelength range using narrow-band 852 nm laser radiation resonant with Cs atomic 6S1/2 → 6P3/2 transition. T-shaped cells made entirely of technical sapphire with thicknesses of L = 1 cm, 40 μm, and ~400 nm, containing cesium atomic vapor, were used. It was shown that with the cell thickness decrease (from centimeters to nanometer thicknesses), many LIF signals are suppressed due to an increase in the number of atomic collisions with the walls, leading to quenching of excited states. By recording the LIF signal, it is also possible to estimate the amount of residual Rb atomic vapor (if any exists) in the Cs-containing cell. The Cs vapor cell can serve as an efficient optical frequency converter filter and has other applications.
Abstract Using laser radiation with a wavelength of 852 nm, which is in resonance with Cs atoms, the bright laser-induced fluorescence (LIF) on the blue lines of 456 and 459 nm (transitions 6S1/2 → 7P3/2 and 6S1/2 → 7 P1/2) was studied by the transition 6S1/2 → 6P3/2. A 1 cm long T-shaped sapphire cell containing Cs atomic vapors was used. The LIF power was investigated as a function of the cell temperature. A linear dependence of the LIF power on the pump radiation was observed. The LIF reached a maximum at 100°C. It is shown that the Cs cell can serve as an effective optical up-converter filter of radiation with a wavelength of 852 nm to radiation with a wavelength of 456 nm.
Abstract Laser-induced fluorescence (LIF) in the spectral range of 400–1000 nm has been investigated in rubidium vapor excited by narrowband diode laser radiation at 780 nm and 795 nm, resonant with the 5 S 1 / 2 → 5 P 1 / 2 , 3 / 2 transitions. Experiments were performed using three specially fabricated all-sapphire cells with thicknesses of L = 1 cm, 10 μ m, and 500 nm. Multiple fluorescence channels were observed, and it is shown that many LIF signals are suppressed with decreasing cell thickness due to enhanced atom–wall collisions leading to quenching of excited states. Nevertheless, for a nanocell of thickness L = 500 nm at temperatures of ∼ 300 ∘ C, blue fluorescence at 420 nm remains observable, and its intensity is compared with results available in the literature. It is further demonstrated that LIF spectroscopy enables detection and estimation of residual cesium vapor in rubidium cells via energy-transfer processes. In addition, the Rb vapor cell can operate as an efficient optical filter and frequency up-converter, converting radiation at 780 nm or 795 nm into shorter wavelengths, notably 420 nm. These results highlight the potential of broadband LIF spectroscopy in alkali vapors for applications in precision measurements, optical frequency standards, and quantum technologies.
We have observed laser-induced fluorescence using 456 nm laser radiation, resonant with the 6S1/2-7P3/2 transition in Cs atoms. It includes red emission lines in the range of 580-730 nm and a prominent line at 852 nm corresponding to the 6P3/2-6S1/2 transition. A T-shaped all-sapphire cell with a length of 1 cm, containing Cs atomic vapor and capable of being heated up to 500 oC, was used. The laser-induced fluorescence (LIF) power at 852 nm was investigated as a function of the cell temperature. The maximum LIF power was achieved at 130 oC, while a significant decrease was observed around 300 oC. At 130 oC, the Doppler-broadened LIF spectrum at 852 nm exhibited self-conversion, resulting in the formation of two distinct peaks within the spectrum. The LIF power at 852 nm was also studied as a function of the 456 nm radiation power. The Cs cell demonstrated potential as an efficient optical filter and down-converter, effectively transforming 456 nm radiation into 852 nm radiation.
A fluorescence radiation inhibition has been observed by absorption of a laser beam at a resonance of 852 nm at the interface of a Pyrex cell containing optically thick Cesium vapor. One observes a hole of GHz magnitude at the center of the retro-fluorescence signal associated with the lines of hyperfine structure 62P312-625112 (F =4,3). This phenomenon of inhibition, similar to a self-reversal of spectral lines, is found in the radiation generated by pooling effect. It occurs without a significant change in the absorption rate of laser energy. This is attributed to a coupling between atoms excited to 62P312 by laser pumping and a deposit of Cesium of atomic dimensions on the glass. At resonance, an important proportion of the atoms excited by the laser is in the vicinity of a thin conducting film. The non-radiating transformation process of the atomically excited energy to thermal energy is therefore favored. The interface lit by a monochromatic laser diode acts as a stop band filter and as a secondary luminous source. The width of the filter at half-height is proportional to the density of the atomic vapor. Sub-Doppler effects in inhibition spectral band have been observed. We present new experimental results and a phenomenon-related study of fluorescence inhibition induced by interfaced laser.
The effect of electromagnetically-induced transparency in the ladder system of 5S1/2-5P3/2-5D5/2 levels of Rb atoms is studied. The effect of spectral narrowing of the dark resonance (DR) is shown depending on the density of atomic vapor and the thickness L of the spectroscopic cell, which contains Rb atomic vapor. The thickness L varies from 390 nm to 4 mm, the atomic density N increased to ~ 10^16 cm^-3, and intense coupling and weak probe radiation were used. The maximum effect, namely the 22-fold spectral narrowing of DR, was achieved in a cell with a thickness of L = 4 mm. With decreasing of the thickness L, the effect of spectral narrowing becomes weaker: for example, at L = 2 μm, a 2.4-fold spectral narrowing of DR occurs. The spectral narrowing of DR was practically absent at L = 0.8 μm, and with a further decrease to L = 0.4 μm with increasing of atomic vapor density, spectral broadening of DR began to occur. In almost all cases, at moderate atomic densities and high intensities of the coupling radiation, ~ 100% DR contrast was achieved. The effect of spectral narrowing and broadening of DR is explained.