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Quantum Dot Spin Dynamics and Quantum Randomness for Secure Optical Communication

Marius Cizauskas

Published Jul 1, 2026• 0 citations
OpenAlex

Abstract

This thesis investigates two complementary quantum technologies for secure optical communication: spin dynamics in telecom C-band quantum dots and a high-bandwidth source-device-independent quantum random number generator. Together, they address two central requirements of quantum networks: long-lived spin memories for quantum repeaters and secure, high-rate entropy generation for quantum key distribution. The first part studies the spin dynamics of InAs/InGaAs/InP quantum dots grown by strain-free droplet epitaxy using time-resolved Faraday ellipticity. Compared to Stranski-Krastanov grown telecom dots, droplet epitaxy shows improved spin properties, including an electron spin relaxation time of 3.0 us and reduced in-plane electron g-factor anisotropy, indicating enhanced structural symmetry. Polarization recovery and Hanle measurements reveal nuclear spin lifetimes comparable to electron spin lifetimes, attributed to quadrupolar interactions arising from Ga-In interdiffusion. These results demonstrate the advantages of droplet epitaxy over strain-based growth and indicate further potential through optimized material compositions. The second part investigates one-, two-, and four-layer InAs/InAlGaAs Stranski-Krastanov quantum dots to assess layer-dependent carrier type and spin coherence. Increasing layer number induces a transition from electron to hole resident carriers due to interlayer tunnelling into lower-energy dots, the emergence of spin-mode locking for four or more layers, and the appearance of a non-oscillating spin component likely associated with reduced heavy-hole/light-hole mixing. Although droplet epitaxy samples exhibit superior spin parameters overall, no spin-mode locking is observed, potentially due to shorter transverse coherence or electron-dominated charging. The final part presents a source-device-independent quantum random number generator based on heterodyne detection of vacuum fluctuations. Using a 90 degree optical hybrid, balanced photodetectors, a dual-channel 12-bit ADC operating at 3.2 GS/s per channel, and FPGA-implemented Toeplitz hashing with PCIe transfer, a total extracted bandwidth of 33.91 Gbit/s is achieved. The system assumes no trust in the optical source and performs all extraction in hardware, maintaining security even under adversarial state preparation.

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Spin properties in droplet epitaxy grown telecom quantum dots

Marius Cizauskas, Elisa Maddalena Sala, Jon Heffernan +3 more

We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emits in the telecom C band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g factors of | g e | = 0.93 and | g h | = 0.47 , with the electron g factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T 1 = 3.0 µ s , representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g -factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute this g -factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.

arXiv:2507.06058•Physical review. B./Physical review. B•Sep 25, 2025•1 citation

An artificial rubidium atom

Jan-Philipp Jahn

Harnessing quantum mechanics to revolutionize various fields of established technology has fueled research activities in recent years. Especially the prospect of inherently secure quantum communication channels has become increasingly desirable to businesses, politicians and society as a whole to protect sensitive information. \nAt heart, quantum communication relies on the distribution of entangled quantum states that make the communication impervious to eavesdroppers. Naturally single photons or photon pairs are an excellent choice for distributing entangled states at the speed-of-light through existing fiber-networks. \nOne of the most promising quantum light sources constitute epitaxial quantum dots. The high oscillator strength renders them exceptionally bright, while still emitting nearly indistinguishable single photons with quantum efficiencies close to unity, an important prerequisite for high-fidelity photonic quantum applications. By carefully manufacturing the semiconductor heterostructure, the optical environment can be individually tailored, utilizing Purcell enhancement, by embedding the emitter in a semiconductor cavity or exploiting wave guiding properties in form of micropillars or nanowires to enhance the extraction efficiency. \nInevitable optical attenuation in fiber networks however necessitates the overall communication channel length to be divided into subsections with nodes that can temporarily store the quantum information. Naturally this requires a quantum memory which can efficiently store the quantum state for a sufficiently long time and subsequently recreate the stored photon on demand. \nIn this framework, atomic memories represent the established benchmark, unrivaled by quantum dots spin states which remain intrinsically limited by the decoherence-inducing interaction with the solid state environment. Combining the excellent single-photon source of a quantum dot with the superior coherence properties of alkali quantum memories in a hybrid system at each quantum node offers the best of both worlds, promising exponential speed-up of truly secure communication. \nThis PhD thesis focuses on the requirements imposed on the quantum dot in such a hybrid quantum network and shows how these challenges can be overcome. \nThe first part of the introduction aims to give a detailed overview on the underlying quantum communication protocol of a hybrid quantum network and how it fares against the more established DLCZ protocol. Next, single-photon sources, and quantum dots in particular, will be outlined and the growth mechanism and optical properties of epitaxial GaAs quantum dots discussed in detail. Lastly, to illustrate the framework in which a quantum dot can efficiently be paired with alkali atoms and to understand the challenges that arise, the mode of operation and attributes of the state-of-art broadband quantum memory will be summarized in chapter 2. \nThe third chapter investigates the optical properties of an epitaxial GaAs quantum dot spectrally matched to rubidium. By means of strain-tuning, the quantum dot can address all hyperfine transitions of the rubidium D2 line and a first interaction with atomic vapors is shown in a transmission measurement. In conjunction with other optical measurements, true Fourier-limited emission of single photons is demonstrated. Furthermore, we establish a possible route to overcome the bandwidth mismatch of the two systems in form of the coherent-scattering regime. \nWhile this coherent-scattering regime offers quantum dot single-photons with sub-natural bandwidths, in form of elastically scattered single photons that predominately retain the small linewidth of the excitation laser, the emission is highly probabilistic and relies on continuous-wave excitation or weak, resonant laser pulses of durations exceeding the exciton lifetime. The fourth chapter demonstrates the generation of true on-demand single photons with tailored temporal waveform envelopes between 14 and 245 ns, overcoming the temporal limitations imposed by the exciton two-level system. The photonic bandwidth is reduced by almost one order of magnitude. \nIn the following, the decay dynamics of a positively charged exciton in an GaAs quantum dot will be investigated by time-resolved photolumincescence and resonance fluorescence measurements (chapter 5). In Chapter 6 the optical properties of GaAs quantum dots in 500 nm thick membranes are characterized. Finally, an outlook into future developments and the solutions to remaining challenges will be presented. \n

•Jan 1, 2018•0 citations

Layer-dependent spin properties of charge carriers in vertically coupled telecom quantum dots

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We investigate the spin properties of charge carriers in vertically coupled InAs/InAlGaAs quantum dots grown by molecular beam epitaxy, emitting at telecom C-band wavelengths, with a silicon δ -doped layer. Using time-resolved pump-probe Faraday ellipticity measurements, we systematically study single-, two-, and four-layer quantum dot (QD) configurations to quantify how vertical coupling affects key spin-coherence parameters. Our measurements reveal distinct layer-dependent effects: (i) Adding a second QD layer flips the resident charge from electrons to holes, consistent with optically induced electron tunneling into lower-energy dots and resultant hole charging. (ii) Starting from the four-layer sample, the pump-probe signal develops an additional nonoscillating, decaying component absent in single- and two-layer samples, attributed to multiple layer growth changing the strain environment, which reduces heavy-hole and light-hole mixing. (iii) With four layers or more, hole spin mode locking (SML) can be observed, enabling quantitative extraction of the hole coherence time T 2 ≈ 13 ns from SML amplitude saturation. We also extract longitudinal spin relaxation ( T 1 ) and transverse ( T 2 * ) spin dephasing times, g-factors, and inhomogeneous dephasing parameters for both electrons and holes across all layer configurations. The hole spin dephasing times T 2 * remain relatively constant (2.3–2.7 ns) across layer counts, while longitudinal relaxation times T 1 decrease with increasing layers (from 0.9 µ s for single-layer to 0.32 µ s for four-layer samples). These findings provide potential design guidelines for engineering spin coherence in telecom-band QDs for quantum information applications.

arXiv:2509.15051•Physical review. B./Physical review. B•Jan 9, 2026•0 citations

Optical spin tomography in a telecom C-band quantum dot

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A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at telecom wavelengths present a promising spin-photon platform, and a precise understanding of the properties of the confined spin is crucial for optimizing its interplay with the photonic qubit. Here, we simultaneously benchmark the electron and hole g-factors and coherence properties of a droplet epitaxy QD, solely from time and polarization resolved photon correlations. These measurements identify the hole as the preferable qubit for spin-photon entanglement in quantum network nodes. We then perform full state tomography of the confined hole ground state to reveal subtle anisotropies in the spin precession, providing essential diagnostics for minimizing phase errors critical for deterministic multiphoton entanglement generation.

quant-pharXiv:2512.20870•Dec 25, 2025•0 citations

Optical spin tomography in a telecom C-band quantum dot

Junyang Huang, Ginny Shooter, Petros Laccotripes +5 more

A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at telecom wavelengths present a promising spin–photon platform, and a precise understanding of the properties of the confined spin is crucial for optimizing its interplay with the photonic qubit. Here, we simultaneously benchmark the electron and hole g -factors and coherence properties of a droplet epitaxy quantum dot, solely from time- and polarization-resolved photon correlations. These measurements identify the hole as the preferable qubit for spin–photon entanglement in quantum network nodes. We then perform full state tomography of the confined hole ground state to reveal subtle anisotropies in the spin precession, providing essential diagnostics for minimizing phase errors critical for deterministic multiphoton entanglement generation.

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Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

Shichen Zhang, Li Liu, Kai Guo +6 more

The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.

physics.opticsCross-listedarXiv:2511.16894•Nov 24, 2025
This thesis investigates two complementary quantum technologies for secure optical communication: spin dynamics in telecom C-band quantum dots and a high-bandwidth source-device-independent quantum random number generator. Together, they address two central requirements of quantum networks: long-lived spin memories for quantum repeaters and secure, high-rate entropy generation for quantum key distribution. The first part studies the spin dynamics of InAs/InGaAs/InP quantum dots grown by strain-free droplet epitaxy using time-resolved Faraday ellipticity. Compared to Stranski-Krastanov grown telecom dots, droplet epitaxy shows improved spin properties, including an electron spin relaxation time of 3.0 us and reduced in-plane electron g-factor anisotropy, indicating enhanced structural symmetry. Polarization recovery and Hanle measurements reveal nuclear spin lifetimes comparable to electron spin lifetimes, attributed to quadrupolar interactions arising from Ga-In interdiffusion. These results demonstrate the advantages of droplet epitaxy over strain-based growth and indicate further potential through optimized material compositions. The second part investigates one-, two-, and four-layer InAs/InAlGaAs Stranski-Krastanov quantum dots to assess layer-dependent carrier type and spin coherence. Increasing layer number induces a transition from electron to hole resident carriers due to interlayer tunnelling into lower-energy dots, the emergence of spin-mode locking for four or more layers, and the appearance of a non-oscillating spin component likely associated with reduced heavy-hole/light-hole mixing. Although droplet epitaxy samples exhibit superior spin parameters overall, no spin-mode locking is observed, potentially due to shorter transverse coherence or electron-dominated charging. The final part presents a source-device-independent quantum random number generator based on heterodyne detection of vacuum fluctuations. Using a 90 degree optical hybrid, balanced photodetectors, a dual-channel 12-bit ADC operating at 3.2 GS/s per channel, and FPGA-implemented Toeplitz hashing with PCIe transfer, a total extracted bandwidth of 33.91 Gbit/s is achieved. The system assumes no trust in the optical source and performs all extraction in hardware, maintaining security even under adversarial state preparation.
We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emits in the telecom C band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g factors of | g e | = 0.93 and | g h | = 0.47 , with the electron g factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T 1 = 3.0 µ s , representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g -factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute this g -factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.
Harnessing quantum mechanics to revolutionize various fields of established technology has fueled research activities in recent years. Especially the prospect of inherently secure quantum communication channels has become increasingly desirable to businesses, politicians and society as a whole to protect sensitive information. \nAt heart, quantum communication relies on the distribution of entangled quantum states that make the communication impervious to eavesdroppers. Naturally single photons or photon pairs are an excellent choice for distributing entangled states at the speed-of-light through existing fiber-networks. \nOne of the most promising quantum light sources constitute epitaxial quantum dots. The high oscillator strength renders them exceptionally bright, while still emitting nearly indistinguishable single photons with quantum efficiencies close to unity, an important prerequisite for high-fidelity photonic quantum applications. By carefully manufacturing the semiconductor heterostructure, the optical environment can be individually tailored, utilizing Purcell enhancement, by embedding the emitter in a semiconductor cavity or exploiting wave guiding properties in form of micropillars or nanowires to enhance the extraction efficiency. \nInevitable optical attenuation in fiber networks however necessitates the overall communication channel length to be divided into subsections with nodes that can temporarily store the quantum information. Naturally this requires a quantum memory which can efficiently store the quantum state for a sufficiently long time and subsequently recreate the stored photon on demand. \nIn this framework, atomic memories represent the established benchmark, unrivaled by quantum dots spin states which remain intrinsically limited by the decoherence-inducing interaction with the solid state environment. Combining the excellent single-photon source of a quantum dot with the superior coherence properties of alkali quantum memories in a hybrid system at each quantum node offers the best of both worlds, promising exponential speed-up of truly secure communication. \nThis PhD thesis focuses on the requirements imposed on the quantum dot in such a hybrid quantum network and shows how these challenges can be overcome. \nThe first part of the introduction aims to give a detailed overview on the underlying quantum communication protocol of a hybrid quantum network and how it fares against the more established DLCZ protocol. Next, single-photon sources, and quantum dots in particular, will be outlined and the growth mechanism and optical properties of epitaxial GaAs quantum dots discussed in detail. Lastly, to illustrate the framework in which a quantum dot can efficiently be paired with alkali atoms and to understand the challenges that arise, the mode of operation and attributes of the state-of-art broadband quantum memory will be summarized in chapter 2. \nThe third chapter investigates the optical properties of an epitaxial GaAs quantum dot spectrally matched to rubidium. By means of strain-tuning, the quantum dot can address all hyperfine transitions of the rubidium D2 line and a first interaction with atomic vapors is shown in a transmission measurement. In conjunction with other optical measurements, true Fourier-limited emission of single photons is demonstrated. Furthermore, we establish a possible route to overcome the bandwidth mismatch of the two systems in form of the coherent-scattering regime. \nWhile this coherent-scattering regime offers quantum dot single-photons with sub-natural bandwidths, in form of elastically scattered single photons that predominately retain the small linewidth of the excitation laser, the emission is highly probabilistic and relies on continuous-wave excitation or weak, resonant laser pulses of durations exceeding the exciton lifetime. The fourth chapter demonstrates the generation of true on-demand single photons with tailored temporal waveform envelopes between 14 and 245 ns, overcoming the temporal limitations imposed by the exciton two-level system. The photonic bandwidth is reduced by almost one order of magnitude. \nIn the following, the decay dynamics of a positively charged exciton in an GaAs quantum dot will be investigated by time-resolved photolumincescence and resonance fluorescence measurements (chapter 5). In Chapter 6 the optical properties of GaAs quantum dots in 500 nm thick membranes are characterized. Finally, an outlook into future developments and the solutions to remaining challenges will be presented. \n
We investigate the spin properties of charge carriers in vertically coupled InAs/InAlGaAs quantum dots grown by molecular beam epitaxy, emitting at telecom C-band wavelengths, with a silicon δ -doped layer. Using time-resolved pump-probe Faraday ellipticity measurements, we systematically study single-, two-, and four-layer quantum dot (QD) configurations to quantify how vertical coupling affects key spin-coherence parameters. Our measurements reveal distinct layer-dependent effects: (i) Adding a second QD layer flips the resident charge from electrons to holes, consistent with optically induced electron tunneling into lower-energy dots and resultant hole charging. (ii) Starting from the four-layer sample, the pump-probe signal develops an additional nonoscillating, decaying component absent in single- and two-layer samples, attributed to multiple layer growth changing the strain environment, which reduces heavy-hole and light-hole mixing. (iii) With four layers or more, hole spin mode locking (SML) can be observed, enabling quantitative extraction of the hole coherence time T 2 ≈ 13 ns from SML amplitude saturation. We also extract longitudinal spin relaxation ( T 1 ) and transverse ( T 2 * ) spin dephasing times, g-factors, and inhomogeneous dephasing parameters for both electrons and holes across all layer configurations. The hole spin dephasing times T 2 * remain relatively constant (2.3–2.7 ns) across layer counts, while longitudinal relaxation times T 1 decrease with increasing layers (from 0.9 µ s for single-layer to 0.32 µ s for four-layer samples). These findings provide potential design guidelines for engineering spin coherence in telecom-band QDs for quantum information applications.
A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at telecom wavelengths present a promising spin-photon platform, and a precise understanding of the properties of the confined spin is crucial for optimizing its interplay with the photonic qubit. Here, we simultaneously benchmark the electron and hole g-factors and coherence properties of a droplet epitaxy QD, solely from time and polarization resolved photon correlations. These measurements identify the hole as the preferable qubit for spin-photon entanglement in quantum network nodes. We then perform full state tomography of the confined hole ground state to reveal subtle anisotropies in the spin precession, providing essential diagnostics for minimizing phase errors critical for deterministic multiphoton entanglement generation.
A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at telecom wavelengths present a promising spin–photon platform, and a precise understanding of the properties of the confined spin is crucial for optimizing its interplay with the photonic qubit. Here, we simultaneously benchmark the electron and hole g -factors and coherence properties of a droplet epitaxy quantum dot, solely from time- and polarization-resolved photon correlations. These measurements identify the hole as the preferable qubit for spin–photon entanglement in quantum network nodes. We then perform full state tomography of the confined hole ground state to reveal subtle anisotropies in the spin precession, providing essential diagnostics for minimizing phase errors critical for deterministic multiphoton entanglement generation.
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.