Macroscopic bright squeezed light is a crucial continuous-variable quantum resource. However, generating it in integrated Kerr microresonators typically requires strong external overcoupling, which inevitably increases the parametric oscillation threshold and forces a reliance on noisy pump amplifiers. Here, we demonstrate a foundry-compatible silicon nitride ( Si 3 N 4 ) optical parametric oscillator (OPO) that successfully breaks this fundamental trade-off. By leveraging ultralow intrinsic loss alongside a large-free-spectral-range microresonator and a broadband pulley coupler, we achieve a milliwatt-level oscillation threshold with high escape efficiencies across dual telecom bands (C and L). This architecture enables the robust, pump-amplifier-free generation of twin-beam intensity-difference squeezing. We directly observe optical squeezing approaching 3 dB in both bands, with quantum noise reduction extending to analysis frequencies of nearly 100 MHz. Furthermore, our phenomenological model of the power-dependent squeezing dynamics captures the competition among fundamental quantum correlations, detuning-locking jitter, and classical excess noise. Armed with these physical insights and our optimized low-threshold architecture, we successfully bridge the gap between macroscopic quantum squeezing and stringent on-chip power budgets, providing a practical, scalable pathway toward fully monolithic, directly diode-pumped continuous-variable quantum light sources.
Macroscopic bright squeezed light is a crucial continuous-variable quantum resource. However, generating it in integrated Kerr microresonators typically requires strong external overcoupling, which inevitably increases the parametric oscillation threshold and forces a reliance on noisy pump amplifiers. Here, we demonstrate a foundry-compatible silicon nitride ( Si 3 N 4 ) optical parametric oscillator (OPO) that successfully breaks this fundamental trade-off. By leveraging ultralow intrinsic loss alongside a large-free-spectral-range microresonator and a broadband pulley coupler, we achieve a milliwatt-level oscillation threshold with high escape efficiencies across dual telecom bands (C and L). This architecture enables the robust, pump-amplifier-free generation of twin-beam intensity-difference squeezing. We directly observe optical squeezing approaching 3 dB in both bands, with quantum noise reduction extending to analysis frequencies of nearly 100 MHz. Furthermore, our phenomenological model of the power-dependent squeezing dynamics captures the competition among fundamental quantum correlations, detuning-locking jitter, and classical excess noise. Armed with these physical insights and our optimized low-threshold architecture, we successfully bridge the gap between macroscopic quantum squeezing and stringent on-chip power budgets, providing a practical, scalable pathway toward fully monolithic, directly diode-pumped continuous-variable quantum light sources.
Squeezed light, with its quantum noise reduction capabilities, has emerged as a powerful resource in quantum information processing and precision metrology. To reach noise reduction levels such that a quantum advantage is achieved, off-chip squeezers are typically used. The development of on-chip squeezed light sources, particularly in nanophotonic platforms, has been challenging. We report 3.7±0.2dB of directly detected nanophotonic quantum squeezing using foundry-fabricated silicon nitride (Si 3 N 4 ) microrings with an inferred squeezing level of 10.2 dB on-chip. The squeezing level is robust across multiple devices and pump detunings, and is consistent with the overcoupling degree without noticeable degradation from excess classical noise. We also offer insights to mitigate thermally induced excess noise, which typically degrades squeezing, by using small-radius rings with a larger free spectral range (450 GHz) and consequently lower parametric oscillation thresholds. Our results demonstrate that Si 3 N 4 is a viable platform for strong quantum noise reduction in a CMOS-compatible, scalable architecture.
Squeezed light is an essential nonclassical resource for quantum sensing, continuous-variable quantum information processing, low-noise optical communication, and new photonic computing systems. However, to make practical use of it, we need compact, low-power squeezed-light sources that can fit on a chip. In this work, we introduce a theoretical model of a dual-pump microring optical parametric amplifier for squeezed-light integrated photonics. The model outlines cavity-enhanced Kerr four-wave mixing among two pump fields, a signal mode, and the conjugate idler sideband. We use a linearized quantum Langevin approach under the undepleted-pump assumption. We derive the frequency-domain inputoutput relation and assess the output quadrature noise based on several factors: external coupling rate, intrinsic loss, pump power, signal detuning, nonlinear coefficient, and dispersion. First, we analyze a dispersion-engineered silicon nitride microring that operates in the telecom band. It shows that moderate external coupling offers the best trade-off between intracavity field enhancement and squeezed-field extraction. With the right pump detuning, the simulated silicon nitride resonator achieves over 10 dB of quadrature noise reduction at milliwatt-level input pump powers. We also compare AlGaAs and InP microring platforms, demonstrating that the squeezing performance is influenced not only by the nonlinear coefficient but also by the combined effects of material nonlinearity, cavity quality factor, loss, coupling, dispersion, and detuning. This framework gives design guidelines for low-power, chip-scale squeezed-light sources aimed at future quantum and AI-oriented photonic integrated circuits.
Abstract Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure −0.81 dB of squeezing below the shot-noise limit with a pump power of 27mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of −7.52 dB±0.22 dB (95% confidence interval: [−7.96,−7.10] dB), and an on-chip anti-squeezing level of +9.62 dB±0.25 dB . We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Quantum noise limits the sensitivity of optical measurements, but squeezed states of light enable quantum-enhanced metrology, sensing, and information processing. Most on-chip squeezed-light sources rely on Kerr (χ(3)) nonlinearities, remain limited by pump power and excess loss constraints. Quadratic (χ(2)) platforms instead provide stronger parametric interactions, lower pump power requirements, and greater spectral engineering flexibility. Here, we demonstrate strong, broadband squeezed-light generation on a thin-film lithium niobate (TFLN) photonic chip using a dual-resonant optical parametric amplifier implemented in a single periodically poled LN (PPLN) microresonator. Near-full-depth domain inversion is achieved simultaneously with highly over-coupled resonances, exhibiting escape efficiencies exceeding 90% and intrinsic quality factors above 2.5 million in a 0.6 mm2 X-cut TF-PPLN resonator, enabling efficient squeezing at 1587 nm when pumped at 793.5 nm. Operating in the continuous-wave regime, we directly measure -0.81 dB of squeezing below the shot-noise limit with a pump power of 27 mW, together with +4.29 dB of anti-squeezing. From these measurements, we infer an on-chip squeezing level of -7.52 dB ± 0.22 dB (95% confidence interval: [-7.96,-7.10] dB), and an on-chip anti-squeezing level of +9.62 dB ± 0.25 dB. We demonstrate single-mode squeezing at degeneracy with a squeezed-light spectrum exceeding 10.3 THz. This work reports the highest squeezing ratio among integrated χ(2) cavity platforms and the first quasi-phase matched, fully resonant χ(2) cavity squeezer on chip, establishing a scalable route to fully integrated power-efficient squeezed-light sources for quantum-enhanced sensing and metrology.
Squeezed light offers genuine quantum advantage in enhanced sensing and quantum computation; yet the level of squeezing or quantum noise reduction generated from nanophotonic chips has been limited. In addition to strong quantum noise reduction, key desiderata for such a nanophotonic squeezer include frequency agility or tunability over a broad frequency range, and simultaneous operation in many distinct, well-defined quantum modes (qumodes). Here we present a strongly overcoupled silicon nitride squeezer based on a below-threshold optical parametric amplifier (OPA) that produces directly detected squeezing of 5.6 dB ± 0.2 dB, surpassing previous demonstrations in both continuous-wave and pulsed regimes. We introduce a seed-assisted detection technique into such nanophotonic squeezers that reveals a quantum frequency comb (QFC) of 16 qumodes, with a separation of 11~THz between the furthest qumode pair, while maintaining a strong squeezing. Additionally, we report spectral tuning of a qumode comb pair over one free-spectral range of the OPA, thus bridging the spacing between the discrete modes of the QFC. Our results significantly advance both the generation and detection of nanophotonic squeezed light in a broadband and multimode platform, establishing a scalable, chip-integrated path for compact quantum sensors and continuous-variable quantum information processing systems.
Integrated nonlinear microring resonators are promising sources of bright twin-beams exhibiting intensity difference squeezing. To take advantage of the noise reduction of these quantum states, many applications require high squeezing levels. However, the attainable on-chip squeezing is constrained by the ratio of intrinsic to coupling loss, which is strongly related to design and fabrication limits. Here, we demonstrate a silicon nitride microring resonator engineered to enable a set of periodic strongly overcoupled resonances from which the estimated on-chip intensity difference squeezing is 11.8 dB, exceptionally high for an integrated device. Due to significant setup loss, we directly measure 1.4±0.2 dB of squeezing, corresponding to an on-chip level of 9.2±5.1 dB. In addition, the new, to the best of our knowledge, design inherently suppresses mode competition in the modes surrounding the twin-beams, enabling a constant high squeezing level up to moderate powers. These results represent a significant step toward the miniaturization of integrated devices whose performance benefits from surpassing the quantum noise limit using squeezed states, with particular relevance to sensing applications.