We study the temperature-dependent microwave response of high-kinetic-inductance superconducting resonators fabricated in Albanova's Nanolab as a part of the LKIPA device project. The investigated devices are based on circuit layouts designed for kinetic-inductance parametric amplification but are characterized using single-tone microwave measurements. We first compare the resonance parameters of different circuit designs to discuss and evaluate the performance of some fabricated resonators. A selected device is then measured in a cryostat, between 1.7 K and 3.0 K, to investigate how the resonance frequency, internal and external loss rates, and Kerr nonlinearity depend on temperature. The results show that the temperature dependence of the resonance frequency and external loss rate can be well described using a Mattis-Bardeen approach for linear responses in the investigated temperature interval. The internal loss rate, however, requires additional resistive channels beyond quasiparticle losses. By investigating near-resonance nonlinearities, we also demonstrate that nonlinear effects are less prominent when the temperature is increased. Deviations between the scattering fit and measured data are also discussed to evaluate possible limitations of the scattering model.
We study the temperature-dependent microwave response of high-kinetic-inductance superconducting resonators fabricated in Albanova's Nanolab as a part of the LKIPA device project. The investigated devices are based on circuit layouts designed for kinetic-inductance parametric amplification but are characterized using single-tone microwave measurements. We first compare the resonance parameters of different circuit designs to discuss and evaluate the performance of some fabricated resonators. A selected device is then measured in a cryostat, between 1.7 K and 3.0 K, to investigate how the resonance frequency, internal and external loss rates, and Kerr nonlinearity depend on temperature. The results show that the temperature dependence of the resonance frequency and external loss rate can be well described using a Mattis-Bardeen approach for linear responses in the investigated temperature interval. The internal loss rate, however, requires additional resistive channels beyond quasiparticle losses. By investigating near-resonance nonlinearities, we also demonstrate that nonlinear effects are less prominent when the temperature is increased. Deviations between the scattering fit and measured data are also discussed to evaluate possible limitations of the scattering model.
Abstract We study the response of several microwave resonators made from superconducting NbTiN thin-film meandering nanowires with large kinetic inductance, having different circuit topology and coupling to the transmission line. Reflection measurements reveal the parameters of the circuit and analysis of their temperature dependence in the range 1.7–6 K extract the superconducting energy gap and critical temperature. The lumped-element LC resonator, valid in our frequency range of interest, allows us to predict the quasiparticle (QP) contribution to internal loss, independent of circuit topology and characteristic impedance. Our analysis shows that the internal quality factor is limited not by thermal-equilibrium QP, but an additional temperature-dependent source of internal microwave loss.
Superconducting boron-doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with low losses at microwave frequencies. We study experimentally the electrodynamics of superconducting silicon thin layers using coplanar waveguide resonators, focusing on the kinetic inductance, the internal losses, and the variation of these quantities with the resonator readout power. We report the observation in a doped semiconductor of microwave resonances with internal quality factors of a few thousand. As expected in the BCS framework, superconducting silicon presents a large sheet kinetic inductance in the 50--500-pH range, comparable to that of strongly disordered superconductors. The temperature dependence of the kinetic inductance is well described by the Mattis-Bardeen theory. However, we find an unexpectedly strong nonlinearity in the complex surface impedance that cannot be satisfactorily explained either by depairing or by quasiparticle heating.
Abstract Superconducting resonators and parametric amplifiers are important components in scientific systems such as kinetic inductance detector arrays, frequency-domain multiplexers for other superconducting bolometers, spin-ensemble based memories, and circuit quantum electrodynamics demonstrators. In this paper, we report microwave measurements of superconducting Ti, Nb, and NbN resonators and their use as parametric amplifiers. These half-wave resonators were fabricated under near identical sputtering and lithographic conditions to ensure a like-for-like comparison of material properties. We report a wide range of properties and behaviours in terms of transition temperatures, resistivities, rate-limiting nonlinear response times, nonlinear dissipation, signs of the nonlinear inductances and their dependences on temperature and resonance harmonic. We have successfully operated Nb and NbN resonators as high gain parametric amplifiers, achieving greater than 20 dB of power amplification. We have shown that for a half-wave resonator, amplification can be realised not only in the fundamental resonance but also in the higher harmonic resonances. Further, for materials with high transition temperatures, e.g. Nb and NbN, amplification can be achieved at ∼ 4 K, i.e. a temperature maintained by a pulse tube cooler. Finally, in materials systems that have very fast response times, e.g. NbN, we have found that a cross-harmonic type of amplification can be achieved by placing pump tone in a different resonant mode as the signal and the idler. This wide range of observations will have important implications on the design and application of superconducting parametric amplifiers.
Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.
Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.
Superconducting high kinetic inductance elements constitute a valuable resource for quantum circuit design and millimeter-wave detection. Granular aluminum (grAl) in the superconducting regime is a particularly interesting material since it has already shown a kinetic inductance in the range of nH/□ and its deposition is compatible with conventional Al/AlOx/Al Josephson junction fabrication. We characterize microwave resonators fabricated from grAl with a room temperature resistivity of 4×10^{3} μΩ cm, which is a factor of 3 below the superconductor to insulator transition, showing a kinetic inductance fraction close to unity. The measured internal quality factors are on the order of Q_{i}=10^{5} in the single photon regime, and we demonstrate that nonequilibrium quasiparticles (QPs) constitute the dominant loss mechanism. We extract QP relaxation times in the range of 1 s and we observe QP bursts every ∼20 s. The current level of coherence of grAl resonators makes them attractive for integration in quantum devices, while it also evidences the need to reduce the density of nonequilibrium QPs.