We demonstrate a thin-film lithium niobate (TFLN) integrated photonic chip for time-binencoded quantum key distribution (QKD). The chip enables on-chip preparation of both time- and phase-basis quantum states required by the BB84 protocol. By exploiting the linear Pockels effect in TFLN, high-fidelity phase modulation is achieved without phase-dependent loss, resulting in stable and low-noise quantum state generation. The measured interference visibility reaches up to 98.74% for phase-basis states, while extinction ratios exceeding 22 dB are obtained for time-basis states. Furthermore, a chip-to-chip QKD system is implemented using TFLN integrated circuits at both the transmitter and the receiver. Finite-key analysis based on a one-decoy protocol demonstrates positive secret key generation over 20 km of standard single-mode fiber.
We demonstrate a thin-film lithium niobate (TFLN) integrated photonic chip for time-binencoded quantum key distribution (QKD). The chip enables on-chip preparation of both time- and phase-basis quantum states required by the BB84 protocol. By exploiting the linear Pockels effect in TFLN, high-fidelity phase modulation is achieved without phase-dependent loss, resulting in stable and low-noise quantum state generation. The measured interference visibility reaches up to 98.74% for phase-basis states, while extinction ratios exceeding 22 dB are obtained for time-basis states. Furthermore, a chip-to-chip QKD system is implemented using TFLN integrated circuits at both the transmitter and the receiver. Finite-key analysis based on a one-decoy protocol demonstrates positive secret key generation over 20 km of standard single-mode fiber.
Photonic integration in quantum communication holds significant potential for miniaturization and enabling commercial applications. Among various platforms, thin-film lithium niobate (TFLN) stands out due to its exceptional combination of high electro-optical efficiency, low propagation loss, and compact footprint. Here, we demonstrate a 2.5 GHz chip-to-chip fully integrated quantum key distribution (QKD) system based on a TFLN platform, which incorporates high-speed dual-polarization time-bin phase encoding and decoding functionalities. We achieve an extremely low quantum bit error rate of 0.53% and a secret key rate exceeding 10 Mbps over 25 km fiber spools. The design of cascaded Mach–Zehnder modulators effectively suppresses the patterning effect in high speed QKD. Notably, the TFLN chips used in both the transmitter and receiver share a similar architecture, highlighting the potential for creating a homogeneous transceiver. This work paves the way for high-speed, miniaturized QKD systems based on the lithium niobate integrated platform.
Time-bin encoded quantum states of light are crucial for quantum technology applications. The integration of manipulation functionalities into chip-scale devices is essential for deploying scalable, high-performance, and cost-effective quantum networks. Here we develop a fully integrated, high-throughput quantum receiver based on the thin-film lithium niobate (TFLN) platform, capable of high-speed electro-optic manipulation of time-bin encoded quantum states. The device's novel architecture enables active switching of time-bin quantum states with an electro-optic bandwidth exceeding 30 Ghz, while supporting real-time arbitrary projective measurements with a bandwidth of over 1 GHz. We showcase its versatility and performance through several applications, including the certification of entanglement with Bell's inequality violation by 38 standard deviations and with >95% visibility. We then apply it to a fiber-based quantum communication scenario, where we experimentally demonstrate an entanglement-based quantum key distribution (QKD) protocol, achieving stable finite-size secure key rates exceeding 25 kbit/s over 12 hours of continuous operation. By leveraging a high-speed active switching scheme, the system overcomes the need for temporal post-selection, eliminating a fundamental loophole that compromises the security of time-bin entanglement-based QKD protocols and relaxes the temporal resolution requirements of single-photon detectors. Moreover, it enables active selection of the projection basis, increasing the flexibility for communication parties. This approach establishes a versatile and scalable architecture for time-bin encoded quantum communication, enabling practical protocols on industry-grade photonic technology.
Quantum key distribution (QKD) systems have proven their theoretically unconditional security by quantum mechanics, but the scalability and cost barriers limit the rapid growth of the QKD system industry. The integration of QKD systems on chips has enabled their widespread adoption in secure quantum communication technologies, but the optimized platforms and designs are still being studied. Herein, we fabricated monolithic quantum photonic circuits for the BB84 QKD protocol using thin-film lithium niobate (TFLN), which enables flexible design in organizing both active and passive elements on one chip based on its superior material properties. The proposed circuit design for both transmitter and receiver parts are identical, which facilitates stable operation and mass production. Using our device, we demonstrated QKD over a field-deployed quantum channel, and its performance is comparable to state-of-the-art. This result proved the potential of TFLN for quantum communication technology.
Integrated photonics has emerged as a promising platform for quantum communication and quantum computation. Thin-film lithium niobate (TFLN) has gained significant attention in this field due to its exceptional optical properties, enabling the realization of numerous integrated photonic devices. However, quantum memory, which serves as a universal building block for the quantum internet, has not yet been demonstrated in TFLN. In this study, we realized the first on-chip quantum memory using erbium ions doped TFLN. The developed quantum memory achieves a storage time of 400 ns with an efficiency of 1.95%, significantly outperforming conventional waveguide delay lines. The multimode capability is demonstrated by successfully storing four temporal modes. Furthermore, single-photon-level coherent pulses are encoded into time-bin qubits and stored with a fidelity of 96.8% , surpassing the classical limit achievable by measure-and-prepare strategy. Our results demonstrate the first on-chip quantum memory for telecom-band time-bin qubits in TFLN, providing a key building block toward integrated quantum registers and repeaters for scalable quantum information processing.
Quantum key distribution (QKD) ensures unconditional security for public key encryption by utilizing the principles of quantum mechanics. This study designs and fabricates a QKD chip based on the silicon-on-insulator (SOI) platform, employing a time-bin encoding scheme with decoy states. In the design, we integrate a slow thermo-optic phase modulator with a carrier-depletion modulator to ensure high fidelity of quantum states and high-speed encoding capabilities, enabling precise and flexible time-bin encoding. We achieve the encoding and decoding of four BB84 quantum states at a repetition rate of 100 MHz. In the experiment, the visibility of the interference fringes for the phase state |+⟩ is 93.66%, and for the phase state |−⟩, it is 92.36%. The extinction ratios for the time states |0⟩ and |1⟩ are 19.33 and 18.72 dB, respectively. The experimental results demonstrate that the chip has efficient quantum state preparation capability, providing significant support for the practical implementation of quantum key distribution technology. Additionally, we propose a new chip structure, to our knowledge, using SOI and Si 3 N 4 heterogeneous integration. The SOI waveguide is used for high-speed modulation encoding, while the delay line is composed of Si 3 N 4 waveguides. This structure is designed to address the stability issues of the chip caused by temperature variations.
Quantum key distribution (QKD) relies on quantum state manipulation to achieve unconditionally secure key transmission. Polarization encoding, a mainstream QKD scheme, faces practical limitations due to the bulkiness and instability of discrete optical components. This work presents a polarization-encoding chip based on hybrid thin-film lithium niobate (TFLN) and silicon-on-insulator (SOI) integration, enabling dynamic control of four polarization states | R 〉, | A 〉, | L 〉, and | D 〉 with extinction ratios over 16.78 dB, using only a single thermal and electro-optic phase shifter in a compact architecture. Experimental results demonstrate that the chip achieves a secure key rate (SKR) of 328 kbps and a quantum bit error rate (QBER) of 1.96% at 100 MHz repetition rate in a 10 km fiber-based QKD system. Compared to conventional silicon-based carrier-depletion modulators (CDMs), the TFLN-SOI hybrid integration design avoids phase saturation and dynamic loss induced by carrier depletion, significantly enhancing the stability and scalability of polarization encoding.