Optics Express
High efficiency polarization encoding using a single thermal and electro-optic TFLN-based chip for quantum key distribution
Chunxue Zhang, Hanming Yang, Junchi Ma, Liyong Guo, Jianguang Li, Jiashun Zhang, Yue Wang, Xiaojie Yin, Wei Chen, Yuanda Wu, Xiangyang Dai, Weihua Guo, Jian Li, Junming An
Abstract
Quantum key distribution (QKD) relies on quantum state manipulation to achieve unconditionally secure key transmission. Polarization encoding, a mainstream QKD scheme, faces practical limitations due to the bulkiness and instability of discrete optical components. This work presents a polarization-encoding chip based on hybrid thin-film lithium niobate (TFLN) and silicon-on-insulator (SOI) integration, enabling dynamic control of four polarization states | R 〉, | A 〉, | L 〉, and | D 〉 with extinction ratios over 16.78 dB, using only a single thermal and electro-optic phase shifter in a compact architecture. Experimental results demonstrate that the chip achieves a secure key rate (SKR) of 328 kbps and a quantum bit error rate (QBER) of 1.96% at 100 MHz repetition rate in a 10 km fiber-based QKD system. Compared to conventional silicon-based carrier-depletion modulators (CDMs), the TFLN-SOI hybrid integration design avoids phase saturation and dynamic loss induced by carrier depletion, significantly enhancing the stability and scalability of polarization encoding.