Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Superconductor Science and Technology

4-pixel NbN hot-electron bolometer integrated in a Si 3 N 4 planar optical waveguide with on-chip fiber-alignment trench

Nikolay A. Vovk, G. Matveev, Alexander M. Mumlyakov, М.В. Шибалов, Ivan A. Filippov, I. D. Burkov, S. D. Perov, N. V. Porokhov, Nikita Osipov, Michael A. Tarkhov

Published Jun 15, 2026• 0 citations
Publisher

Abstract

Abstract In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si 3 N 4 ) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches 3800 V W − 1 at a modulation frequency of 3 GHz . We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors.

DOI
10.1088/1361-6668/ae7d69

Related papers

4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench

N. A. Vovk, G. A. Matveev, M. A. Mumlyakov +7 more

In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si$_3$N$_4$) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches $3800~\mathrm{V/W}$ at a modulation frequency of $3~\mathrm{GHz}$. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).

arXiv:2603.01676•Mar 2, 2026•0 citations

Waveguide-integrated niobium- nitride detectors for on-chip quantum nanophotonics

F. Mattioli, Sara Cibella, Alessandro Gaggero +2 more

NbN-based detectors can detect light from the granular regime (single or few photons) up to weak continuous photon fluxes at wavelengths ranging from visible light up to mid-IR. The article reports our recent results on a novel linear detector, the waveguide-integrated hot electron bolometer (HEB) capable to measure photon fluxes of large coherent beams in a regime in which superconducting nanowire single photon detectors (SNSPDs) are not efficient due to their strong nonlinearity. SNSPDs, photon number resolving detectors and amplitude multiplexing readout schemes, all integrated on photonic circuits are also discussed in the paper. The compatibility of the integrated HEB detectors with the SNSPDs technology can allow the characterization of complex non classical states of light within the same chip.

Nanotechnology•Nov 20, 2020•3 citations

NbN Hot Electron Bolometric Mixers for a Quasi--Optical THz Receiver

M. Kroug

Experimental work on the development of a quasi-optical heterodyne receiver for the THz frequency range is reported. The mixing device is a superconducting hot electron bolometer (HEB) made from ultrathin, d = 3 - 5 nm, niobium nitride (NbN) films. Work described in this thesis comprises: The design of a prototype receiver using quasi-optical coupling. Device fabrication involving reactive magnetron sputtering of NbN films and lithographic definition of the antenna integrated mixer. An investigation of the receiver performance at frequencies between 0.6 THz and 2.5 THz. The best performance is obtained with HEB mixers made from NbN films with a thickness d = 3-3.5 nm and a critical temperature T c = 9 - 9.5 K. Double-side band receiver noise temperatures are 530 K at 0.6 THz, 650 K at 1.6 THz and 1100 K at 2.5 THz. Corrected for losses in the receiver input optics, these values amount to only 10 times the theoretical quantum limit. MgO as the substrate material has been shown to provide improved acoustic coupling between NbN film and the substrate compared to other materials such as Si or sapphire. A maximum IF gain bandwidth of 4.5 GHz has been measured under the same operating conditions which yield lowest noise temperature. The local oscilltor power requirement is ~250 nW absorbed in the bolometer. Quasi-optically coupled HEB mixers have become the device-of-choice for radio astronomical applications in the frequency regime at and above 1 THz.

•Jan 1, 2001•4 citations

Superconducting NbN hot electron bolometer mixer at terahertz

Biaobing Jin, Jianhui Chen, Min Liang +3 more

Superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers at terahertz (THz) have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on high-resistivity Si substrates. Double sideband (DSB) receiver noise temperatures of 698 K at 0.65 THz, 904 K at 1.6 THz, 1026 K at 2.5 THz and 1386 K at 3.1 THz have been obtained at 4.2 K without corrections and using changeable input local oscillation (LO) power to eliminate the affects of direct detection and instability of the LO power. The excess quantum noise factor beta of about 4 has been estimated using a quantum noise model.

International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)•Sep 1, 2009•0 citations

Development of a Silicon Membrane-Based Multipixel Hot Electron Bolometer Receiver

Andrey Trifonov, Edward Tong, Paul Grimes +4 more

We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.

IEEE Transactions on Applied Superconductivity•Feb 7, 2017•2 citations

Low Noise Receivers Based on Superconducting Niobium Nitride Hot Electron Bolometer Mixers from 0.65 to 3.1 Terahertz

Min Liang, Jian Chen, Lin Kang +3 more

Low noise terahertz (THz) receivers based on superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on a high-resistivity Si substrate. To eliminate the influence of direct detection and instability of the local oscillation (LO) power, a wire grid has been used to change the input LO power for compensating the shift of bias current during Y-factor measurement. The double sideband (DSB) receiver noise temperatures at 4.2K without corrections have been measured from 0.65 to 3.1THz. The excess quantum noise factor β of about 4 has been obtained, which agrees well with the calculated value. Allan variance of the HEB has been characterized, and Allan time TA longer than 0.4s is obtained. We also estimated the temperature resolution of the HEB from the Allan variance and obtained the minimum temperature resolution of 1.1K using a Gunn oscillator with its multipliers at 0.65THz as an LO source.

IEICE Transactions on Electronics•Jan 1, 2010•7 citations
Abstract In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si 3 N 4 ) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches 3800 V W − 1 at a modulation frequency of 3 GHz . We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors.
4-Pixel NbN Hot-Electron Bolometer Integrated in a Si3_33​N4_44​ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench
In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si3_33​N4_44​) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches 3800 V/W3800~\mathrm{V/W}3800 V/W at a modulation frequency of 3 GHz3~\mathrm{GHz}3 GHz. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).
NbN-based detectors can detect light from the granular regime (single or few photons) up to weak continuous photon fluxes at wavelengths ranging from visible light up to mid-IR. The article reports our recent results on a novel linear detector, the waveguide-integrated hot electron bolometer (HEB) capable to measure photon fluxes of large coherent beams in a regime in which superconducting nanowire single photon detectors (SNSPDs) are not efficient due to their strong nonlinearity. SNSPDs, photon number resolving detectors and amplitude multiplexing readout schemes, all integrated on photonic circuits are also discussed in the paper. The compatibility of the integrated HEB detectors with the SNSPDs technology can allow the characterization of complex non classical states of light within the same chip.
Experimental work on the development of a quasi-optical heterodyne receiver for the THz frequency range is reported. The mixing device is a superconducting hot electron bolometer (HEB) made from ultrathin, d = 3 - 5 nm, niobium nitride (NbN) films. Work described in this thesis comprises: The design of a prototype receiver using quasi-optical coupling. Device fabrication involving reactive magnetron sputtering of NbN films and lithographic definition of the antenna integrated mixer. An investigation of the receiver performance at frequencies between 0.6 THz and 2.5 THz. The best performance is obtained with HEB mixers made from NbN films with a thickness d = 3-3.5 nm and a critical temperature T c = 9 - 9.5 K. Double-side band receiver noise temperatures are 530 K at 0.6 THz, 650 K at 1.6 THz and 1100 K at 2.5 THz. Corrected for losses in the receiver input optics, these values amount to only 10 times the theoretical quantum limit. MgO as the substrate material has been shown to provide improved acoustic coupling between NbN film and the substrate compared to other materials such as Si or sapphire. A maximum IF gain bandwidth of 4.5 GHz has been measured under the same operating conditions which yield lowest noise temperature. The local oscilltor power requirement is ~250 nW absorbed in the bolometer. Quasi-optically coupled HEB mixers have become the device-of-choice for radio astronomical applications in the frequency regime at and above 1 THz.
Superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers at terahertz (THz) have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on high-resistivity Si substrates. Double sideband (DSB) receiver noise temperatures of 698 K at 0.65 THz, 904 K at 1.6 THz, 1026 K at 2.5 THz and 1386 K at 3.1 THz have been obtained at 4.2 K without corrections and using changeable input local oscillation (LO) power to eliminate the affects of direct detection and instability of the LO power. The excess quantum noise factor beta of about 4 has been estimated using a quantum noise model.
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
Low noise terahertz (THz) receivers based on superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on a high-resistivity Si substrate. To eliminate the influence of direct detection and instability of the local oscillation (LO) power, a wire grid has been used to change the input LO power for compensating the shift of bias current during Y-factor measurement. The double sideband (DSB) receiver noise temperatures at 4.2K without corrections have been measured from 0.65 to 3.1THz. The excess quantum noise factor β of about 4 has been obtained, which agrees well with the calculated value. Allan variance of the HEB has been characterized, and Allan time TA longer than 0.4s is obtained. We also estimated the temperature resolution of the HEB from the Allan variance and obtained the minimum temperature resolution of 1.1K using a Gunn oscillator with its multipliers at 0.65THz as an LO source.