Advancing quantum information science demands solid-state quantum systems that maintain long quantum coherence at elevated temperatures while supporting scalable, CMOS-compatible fabrication and telecom C-band operation. No existing platform has simultaneously achieved these requirements, as state-of-the-art demonstrations of coherent control of erbium ions, with an intrinsic telecom-band optical transition, have been confined to cryogenic temperatures below < 10 K under controlled vacuum conditions. This thesis introduces a new paradigm in which materials science and engineering provides the enabling pathway to quantum coherence. A foundry-compatible nanofabrication approach, paired with targeted materials engineering, is developed to realize a new class of CMOS-scalable quantum system: arrays of spatially isolated single-erbium-ion qudits (five-level systems) embedded in silicon-based (e.g., silicon carbide (SiC) and SiCxOy) hollow nanopillars (HNPs). Non-lithographically defined nanostructure geometries with ≤ 5 nm critical dimensions, achieved through conformal chemical vapor deposition (CVD) with growth rates of ~0.3 Å/s, impose a geometric confinement that self-aligns and spatially isolates individual Er3+ ions with nanometer-scale placement accuracy. Oxygen co-doping during growth introduces Si–C–O defect centers that mediate efficient energy transfer to Er3+ ions, yielding an effective excitation cross section of ~2 × 10−17 cm2, two to three orders of magnitude larger than in bulk crystalline hosts, enabling room-temperature single-ion optical detection without the use of nanophotonic cavities. Within these devices, record-long room-temperature optical quantum coherence in the telecom C-band is demonstrated: T2 = 568 µs via photon echo and T2* = 32 µs via Ramsey interferometry, a performance previously limited to vacuum conditions at temperatures over 900 times lower. Coherent Rabi oscillations are observed with >96% contrast, and pulsed photon-correlation measurements confirm single-photon emission (g2(0) = 0.25) from spatially isolated Er3+ ions at ambient conditions. Furthermore, an upconversion-mediated readout protocol accesses the multi-level qudit structure, producing background-free single-photon emission at 518 nm (g2(0) = 0.06) and 980 nm (g2(0) = 0.18) without the use of an optical cavity, the first such demonstration for erbium. Together, these results establish a materials-driven engineering approach that integrates scalable thin-film growth, nanostructure design, implantation optimization, and quantum-optical characterization, overcoming the fundamental requirement for cryogenic operation in telecom quantum systems. Thus, it establishes a pathway toward revolutionary breakthroughs in cryogenic-free quantum photonic integrated devices for practical, deployable quantum sensing, communication, and networking application
Advancing quantum information science demands solid-state quantum systems that maintain long quantum coherence at elevated temperatures while supporting scalable, CMOS-compatible fabrication and telecom C-band operation. No existing platform has simultaneously achieved these requirements, as state-of-the-art demonstrations of coherent control of erbium ions, with an intrinsic telecom-band optical transition, have been confined to cryogenic temperatures below < 10 K under controlled vacuum conditions. This thesis introduces a new paradigm in which materials science and engineering provides the enabling pathway to quantum coherence. A foundry-compatible nanofabrication approach, paired with targeted materials engineering, is developed to realize a new class of CMOS-scalable quantum system: arrays of spatially isolated single-erbium-ion qudits (five-level systems) embedded in silicon-based (e.g., silicon carbide (SiC) and SiCxOy) hollow nanopillars (HNPs). Non-lithographically defined nanostructure geometries with ≤ 5 nm critical dimensions, achieved through conformal chemical vapor deposition (CVD) with growth rates of ~0.3 Å/s, impose a geometric confinement that self-aligns and spatially isolates individual Er3+ ions with nanometer-scale placement accuracy. Oxygen co-doping during growth introduces Si–C–O defect centers that mediate efficient energy transfer to Er3+ ions, yielding an effective excitation cross section of ~2 × 10−17 cm2, two to three orders of magnitude larger than in bulk crystalline hosts, enabling room-temperature single-ion optical detection without the use of nanophotonic cavities. Within these devices, record-long room-temperature optical quantum coherence in the telecom C-band is demonstrated: T2 = 568 µs via photon echo and T2* = 32 µs via Ramsey interferometry, a performance previously limited to vacuum conditions at temperatures over 900 times lower. Coherent Rabi oscillations are observed with >96% contrast, and pulsed photon-correlation measurements confirm single-photon emission (g2(0) = 0.25) from spatially isolated Er3+ ions at ambient conditions. Furthermore, an upconversion-mediated readout protocol accesses the multi-level qudit structure, producing background-free single-photon emission at 518 nm (g2(0) = 0.06) and 980 nm (g2(0) = 0.18) without the use of an optical cavity, the first such demonstration for erbium. Together, these results establish a materials-driven engineering approach that integrates scalable thin-film growth, nanostructure design, implantation optimization, and quantum-optical characterization, overcoming the fundamental requirement for cryogenic operation in telecom quantum systems. Thus, it establishes a pathway toward revolutionary breakthroughs in cryogenic-free quantum photonic integrated devices for practical, deployable quantum sensing, communication, and networking application
Achieving long lived (μs-scale) quantum coherence at room temperature in the telecom C band remains a central unsolved challenge for solid state quantum platforms, with coherence at this timescale previously demonstrated only under vacuum cryogenic conditions at temperatures over 600 times lower. To this end, we introduce a CMOS-compatible nanoengineering approach that deterministically controls the number of Er ions within a nanoscale volume and their electromagnetic environment using sub 5 nm silicon based hollow nanopillars, which achieves the first deterministic spatial isolation of single erbium ions. This nanostructure-enabled isolation suppresses ion-ion interactions and local electromagnetic field noise, enabling single-erbium-ion operation under ambient conditions. The resulting individually addressable single-ion devices exhibit record room temperature optical coherence times of T2* = ~32 μs in the telecom C-band (limited by the coherence of the laser) and extending to > 100 μs based on photon echo measurements. We further present the first demonstration of background free, upconversion enabled single photon emission from multilevel erbium qudits, providing high contrast coherent optical readout. Beyond these performance gains, our work, through sub-5-nm nanoscale engineering, establishes isolated single-ion environments as a viable route to room-temperature operation for solid-state quantum systems. This approach has the potential to address the long-standing barrier of room-temperature decoherence and open a manufacturable, telecom-compatible pathway toward scalable quantum networks, distributed sensing, and cryogenic-free quantum photonic integrated circuits.
Advancing quantum sensing and photonics requires quantum devices that are compatible with existing wafer-scale processing, enabling scalable integration into photonic integrated circuits (PICs) and operation at higher temperatures (≥77 K). In this context, telecom single-photon emitters and qubits based on single ions/defects in solid-state materials are vital for the development of quantum PICs. However, scaling these materials beyond the lab remains practically elusive due to materials’ constraints and stringent operating conditions, rendering them unsuitable for real-world implementation at the telecom C-band. Our approach utilizes a novel, scalable nanofabrication scheme to address these challenges, enabling the creation of spatially isolated and individually addressable single erbium ion qubits in silicon-based nanopillars, thereby paving the way for significant breakthroughs. Our quantum devices exhibit room-temperature operation and unparalleled characteristics, paving the way for quantum advantage by building a foundry-fabricated quantum sensor platform that is practical for widespread deployment in aerospace applications.
High Resolution Image Download MS PowerPoint Slide Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects, such as erbium, suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Moreover, many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here, we present a scalable approach toward CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of 5 × 10 4 and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step toward realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
High Resolution Image Download MS PowerPoint Slide The use of trivalent erbium (Er 3+ ), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO 2 ) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO 2 . Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO2) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO2. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
Solid-state quantum light sources offer a scalable pathway for interfacing stationary spin qubits with flying photonic qubits, forming the backbone of future quantum networks. Telecom-band spin-photonic qubits, operating in the 1260-1675 nm wavelength range, are particularly well-suited for long-distance quantum communication due to minimal loss in standard optical fibers. Achieving scalability, however, hinges on fulfilling several stringent criteria: coherent spin-state control, deterministic and indistinguishable single-photon emission, and integration with nanophotonic structures that enhance radiative properties, such as lifetime, coherence, and photon indistinguishability. This study explores the state-of-the-art spin-photonic qubits across solid-state platforms, including diamond color centers, silicon carbide defect centers, quantum dots, and two-dimensional materials. Special attention is given to silicon-based emitters, particularly G, T, C- and Ci-centers, which promise monolithic integration with complementary metal-oxide-semiconductor (CMOS) technology and telecom-band operation. We classify these systems based on spin-photon interface availability, CMOS process compatibility, and emitter scalability. We also discuss recent advances in cavity quantum electrodynamics (cQED), including Purcell enhancement and quality factor engineering in integrated photonic (circuits) environments. The work highlights emerging demonstrations of quantum networking over metropolitan scales and outlines the trajectory toward chip-scale quantum photonic integrated circuits (QPICs). It combines deterministic emitter creation, coherent spin manipulation, and quantum information processing. These developments pave the way for global quantum networks, enabling secure communication, distributed quantum computing, and quantum-enhanced sensing.