Physically-defined two silicon double quantum dots coupled electrostatically toward integrated quantum bits

Yi Lu

Ilan Bouquet, Alexander Maeder, Mathieu Luisier

By leveraging a GPU-accelerated Schrödinger-Poisson (SP) solver, we characterize exchange coupling in a hole spin double-qubit device involving a double quantum dot (DQD) system formed inside a 5-gate silicon fin field-effect transistor (FinFET) similar to real experimental structures. The self-consistent SP simulations rely on a finite difference discretization of the 3D volume and on a Luttinger-Kohn 6x6 kp Hamiltonian accounting for magnetic fields and strain distribution. They return the gate-induced confined electronic states and the corresponding electrostatic potential hosting the DQD. These quantities serve as inputs to a two-particle Hamiltonian that is constructed from single-particle Slater determinants through the configuration interaction (CI) method. By diagonalizing this two-particle Hamiltonian, the eigenstates and eigenenergies of the DQD system are obtained, together with their exchange coupling. We show that our simulation framework, using a reduced number of basis states, is capable of reproducing the magneto-electrostatic behavior of the devices of interest, as predicted from theory and observed experimentally. We finally leverage our approach to determine the optimal operating conditions of a two-qubit quantum logic gate implemented in a Si FinFET structure.

Erik Nielsen, Edwin Barnes, J. P. Kestner

Ji-Hoon Kang, Hoon Ryu

Cornelis Jacobus van Diepen, Pieter T. Eendebak, Bruno T. Buijtendorp +5 more

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.

Tobias Zibold, Peter Vogl, Andrea Bertoni

A $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ based two-qubit quantum device that allows the controlled generation and straightforward detection of entanglement by measuring a stationary current-voltage characteristics is proposed. We have developed a two-particle Green's function method of open systems and calculate the properties of three-dimensional interacting entangled systems nonperturbatively. We present concrete device designs and detailed charge-self-consistent predictions. One of the qubits is an all-electric Mach-Zehnder interferometer that consists of two electrostatically defined quantum wires with coupling windows, whereas the second qubit is an electrostatically defined double quantum dot located in a second two-dimensional electron gas beneath the quantum wires. We find that the entanglement of the device can be controlled externally by tuning the tunneling coupling between the two quantum dots.