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Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

22.3 A Multi-Qubit Cryo-CMOS SoC with Polar-Based Electron-Spin and PDM-Based Nuclear-Spin Controllers for Color Centers in Diamond

Niels Fakkel, Luc Enthoven, Mohamed Abdelrahman Elbadry, Hendrik Benjamin van Ommen, Margriet van Riggelen, Jiwon Yun, T. H. Taminiau, Fabio Sebastiano, Masoud Babaie

Published Feb 15, 2026• 2 citations
Publisher

Abstract

Co-integrating a cryo-CMOS SoC with nitrogen-vacancy (NV) centers in diamond enables a scalable quantum platform. This work introduces a combined Class-DE RFDAC and classD PDM driver for multi-qubit electron- and nuclear-spin control. A switch allows shared coil driving enabling multi-band 2.5-3.2GHz(1.9-2.1MHz), large-current 70mA(38mA), highRabi frequency 2.31MHz(1.93kHz) and high-fidelity 99.34(3)%(99.78(2)%) electron(nuclear) quantum logic gates with decoupled coherence times >50ms.

DOI
10.1109/isscc49663.2026.11409175

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Co-integrating a cryo-CMOS SoC with nitrogen-vacancy (NV) centers in diamond enables a scalable quantum platform. This work introduces a combined Class-DE RFDAC and classD PDM driver for multi-qubit electron- and nuclear-spin control. A switch allows shared coil driving enabling multi-band 2.5-3.2GHz(1.9-2.1MHz), large-current 70mA(38mA), highRabi frequency 2.31MHz(1.93kHz) and high-fidelity 99.34(3)%(99.78(2)%) electron(nuclear) quantum logic gates with decoupled coherence times >50ms.
Color-center quantum bits (qubits), such as the Nitrogen-Vacancy center (NV) in diamond, have demonstrated entanglement between remote (>1.3km) qubits and excellent coherence times [1], all while operating at a few Kelvins. Compared to other qubit technologies typically operating at mK temperatures, the higher operating temperature of NVs enables scalable 3D integration with cryo-CMOS control electronics [2], provides significantly more cooling power, and removes the interconnect bottleneck between the qubits and the electronics in prior art [3–5]. Yet, no cryo-CMOS controller for NV-based quantum computers (QC) has been demonstrated.
Utility-scale quantum technologies will not only require a well-performing quantum platform, but also classical control hardware that is scalable, efficient, and meets the design requirements set by the quantum system of interest. One approach is the application of silicon CMOS technology, a highly scalable and mature technology, to design application-specific integrated circuits (ASIC) that are optimized for the quantum system. In this work, we present two-qubit control of electron and nuclear spins in NV centres in diamond, using a cryogenic CMOS qubit controller integrated with a diamond quantum device in a cryostat. Using Gate Set Tomography (GST) we characterize the performance of the single-qubit gates on both electron- and carbon nuclear spins, and analyze the limiting noise processes. We use dynamical decoupling to engineer a two-qubit gate, and estimate F2q,avg=95(2)%F_\text{2q,avg} = 95(2)\%F2q,avg​=95(2)% for the electron-nuclear two-qubit gate fidelity. Our demonstration of cryo-CMOS-driven two-qubit gates is a key step towards highly-integrated quantum devices based on colour centres.
Striving toward a scalable quantum processor, this article presents the first cryo-CMOS quantum bit (qubit) controller targeting color centers in diamond. Color-center qubits enable a modular architecture that allows for the 3-D integration of photonics, cryo-CMOS control electronics, and qubits in the same package. However, performing quantum operations in a scalable manner requires large currents in the driving coils due to low coil-to-qubit coupling. Moreover, active calibration of the qubit Larmor frequency is required to compensate inhomogeneities of the bias magnetic field. To overcome these challenges, this work proposes both a cryo-CMOS alternating current (AC) controller consisting of a class-DE series-resonant driver and a DC current regulator (DC CR) that uses a triode-biased H-bridge for scalable low-power qubit operations. By experimentally validating the cryo-CMOS performance with a nitrogen-vacancy (NV) color-center qubit, the AC controller can drive a Rabi oscillation up to 2.5 MHz with a supply draw of 6.5 mA, and the DC CR can tune the Larmor frequency by ±9 MHz while driving up to ±20 mA in the bias coil.T2∗T_{2}^{*}T2∗​coherence times up to$5.3~\mu $s and single-qubit gate fidelities above 98% are demonstrated with the cryo-CMOS control using Ramsey experiments and gate set tomography (GST), respectively. The results demonstrate the efficacy of the proposed cryo-CMOS chips and enable the development of a modular quantum processor based on color centers.
We present a scalable cryo-CMOS controller for color-center-based quantum processors. A diamond waveguide micro-chiplet with NVs is pick-and-placed on CMOS with a 3D-printed prism for scalable photonic readout. A serial qubit driver array using grid inductors and pulse-width modulators generates a programmable 2.87GHz magnetic field for each qubit with low power and strong confinement. Up to 144 qubits can be operated on a single chip, with204μW204\mu\mathrm{W}204μWpower consumption per qubit under active control.
Nitrogen-vacancy (NV) centers in diamond provide room-temperature electron-nuclear spin registers for quantum sensing and quantum information processing, with surrounding 13C nuclear spins serving as long-lived quantum memories. However, coherent control of large nuclear-spin registers is limited by finite electron-spin coherence and spectral addressability. Existing approaches follow two complementary strategies: dynamical-decoupling (DD) gates exploit filter-function resonances to realize selective conditional evolution but permit only discrete rotation angles, whereas dynamical-decoupling radio-frequency (DDrf) control restores continuous tunability at the cost of stringent hyperfine-geometry and RF-power requirements. Here, we introduce hybrid dynamical-decoupling and radio-frequency (H-DDrf) control, which preserves the DD-induced conditional evolution and employs a geometrically phase-matched RF drive to complete the target operation. This approach reduces both RF power and gate duration while maintaining high-fidelity control, thereby expanding the accessible 13C nuclear-spin register for room-temperature NV-based quantum memories and quantum processors.