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JSAP-OSA Joint Symposia

Integrated Lithium Niobate Photonics for Quantum Technology

Cheng-Chung Chiu, Po-Hsiang Huang, Sheng-Hung Wang, Po-Han Chen, Chien-Ming Wu, Pin-Ju Tsai, Ray‐Kuang Lee, Yen-Hung Chen

Published Jan 1, 2025• 0 citations
Publisher

Abstract

Quantum photonics has advanced rapidly and become a leading approach for developing a broad range of quantum technologies, including quantum communications, quantum information processing, quantum computing, and quantum sensing. Besides, the emerging photonic integrated circuits (PIC) technology has been widely used to implement versatile optical elements advantageous for different quantum applications. For example, PIC-based devices have functioned as building blocks, such as photonic qubit sources, linear optical circuits, modulators, and even single-photon detectors, for realizing highly integrated, large-scale quantum computing schemes. In such a powerful quantum photonic integrated circuits (QPIC) scheme, the creation, manipulation, and testing of quantum entanglement states from the generated qubits via a reconfigurable photonic circuitry are essential. Though the state-of-the-art PIC technology is established based on Si photonics due to its widely mature nanophotonic circuit (waveguide) fabrication technology supported by the existing immense semiconductor industry, Si-based PIC has limitations in implementing efficient and fast active elements that usually demand a quadratic nonlinearity. Lithium niobate (LN), renowned as “the silicon of photonics”, has long been a popular material widely used in integrated-optical and nonlinear-optical applications. A great variety of passive and active photonic elements have been realized in the LN platform. Recently, a novel material based on high-quality single-crystalline films of LN, known as thin-film LN on insulator (LNOI), has been developed and has soon drawn enormous attention for its greatly promising ability to realize nanoscale PIC/QPIC in this iconic optical material platform. In this presentation, we report our recent studies on several key LN PIC building blocks for developing novel quantum photonic sources and circuits, including highly integrated photonic-circuit periodically poled lithium niobate (PPLN) chips for photon-pair generation and manipulation, for high-dimensional frequency-entangled qudit production, for time-frequency grid-state generation, for continuous-variable squeezed vacuum state generation, and their potential applications to quantum computing/communication/sensing technology. Besides, a PP-LNOI electro-optic (EO) polarization mode converter (PMC) useful for demonstrating fast control of quantum polarization states and other LNOI circuit elements as QPIC building blocks will also be presented.

DOI
10.1364/jsapo.2025.7p_n204_1

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Lithium niobate-on-insulator (LNOI) is a leading platform for high-speed optical communication technologies owing to its large electro-optic bandwidth, which enables light modulation above 100 GHz [1]. The wide transparency window is being leveraged to produce photonic integrated circuits operating at different wavelengths, and the strong second-order nonlinearity allows efficient frequency conversion via periodic poling of the crystal on the same waveguide network [2]. LNOI has potential to revolutionise optical communication, and nonlinear conversion processes can be used to generate highly pure quantum states acting as bits of information for the next generation of optical quantum information technologies.
Integrated thin-film lithium niobate (TFLN) photonics has emerged as a powerful platform for quantum information science, offering its outstanding nonlinear, electro-optic (EO), and integration capabilities. In this review, we present the latest advances in TFLN-based integrated photonics tailored to quantum technologies. We first explore state-of-the-art quantum light sources realized in both straight waveguide and resonator configuration, including high-brightness photon pair generations, squeezed light, and versatile entanglement schemes. Next, we detail progress in integrated photonic processors, with a focus on programmable interferometric networks, ultrafast EO modulators, and essential passive components for photonic qubit processing. We then address critical challenges in optical interfacing and detection technologies, discussing recent innovations in low-loss fiber-to-chip and grating coupler designs, as well as the integration of on-chip single photon detectors. This review provides a forward-looking perspective on scalable quantum photonic systems that could underpin future advances in quantum communication, computing, and sensing.
Quantum technologies have surpassed classical systems by leveraging the unique properties of superposition and entanglement in photons and matter. Recent advancements in integrated quantum photonics, especially in silicon-based and lithium niobate platforms, are pushing the technology toward greater scalability and functionality. Silicon circuits have progressed from centimeter-scale, dual-photon systems to millimeter-scale, high-density devices that integrate thousands of components, enabling sophisticated programmable manipulation of multi-photon states. Meanwhile, lithium niobate, thanks to its wide optical transmission window, outstanding nonlinear and electro-optic coefficients, and chemical stability, has emerged as an optimal substrate for fully integrated photonic quantum chips. Devices made from this material exhibit high efficiency in in generating, manipulating, converting, storing, and detecting photon states, thereby establishing a basis for deterministic multi-photon generation and single-photon quantum interactions, as well as comprehensive frequency-state control. This review explores the development of integrated photonic quantum technologies based on both silicon and lithium niobate, highlighting invaluable insights gained from silicon-based systems that can assist the scaling of lithium niobate technologies. It examines the functional integration mechanisms of lithium niobate in electro-optic tuning and nonlinear energy conversion, showcasing its transformative impact throughout the photonic quantum computing process. Looking ahead, we speculate on the developmental pathways for lithium niobate platforms and their potential to revolutionize areas such as quantum communication, complex system simulation, quantum sampling, and optical quantum computing paradigms.
Photonics is poised to play a unique role in quantum technology for computation, communications and sensing. Meanwhile, integrated photonic circuits-with their intrinsic phase stability and high-performance, nanoscale components-offer a route to scaling. However, each integrated platform has a unique set of advantages and pitfalls, which can limit their power. So far, the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics. However, thin-film lithium niobate (TFLN) is emerging as a powerful platform with unique capabilities; advances in fabrication have yielded loss metrics competitive with any integrated photonics platform, while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation. In this short review, we explore the prospects of dynamic quantum circuits-such as multiplexed photon sources and entanglement generation-on hybrid TFLN on silicon (TFLN/Si) photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.
We report on a unique photonic quantum source chip highly integrating four-stage photonic elements in a lithium niobate (LN) waveguide circuit platform, where an aperiodically poled LN (APPLN) electro-optic (EO) polarization mode converter (PMC) is sandwiched between two identical type-0 PPLN spontaneous parametric down-converters (SPDCs), followed by an EO phase controller (PC). These core nonlinear optic and EO building blocks on the chip are systematically characterized stage by stage to show its high performance as an integrated quantum source. The APPLN EO PMC, optimally constructed by a genetic algorithm, is characterized to have a broad bandwidth (>13 nm), benefiting an efficient control of broadband type-0 SPDC photon pairs featuring a short correlation time. We demonstrate an efficient conversion of the |VV› photon-pair state generated from the first PPLN SPDC stage to the |HH› state through the APPLN EO PMC stage over its operating bandwidth, a broadband or broadly tunable polarization-entangled state can thus be possibly produced via the superposition of the |VV› state generated from the other PPLN SPDC on the third stage of the chip. Such a state can be further manipulated into two of the Bell states if the relative phases between the two polarization states can be properly modulated through the EO PC on the fourth stage of the chip. Such a multifunction integrated quantum photonic source chip can be of high value to developing a compact, efficient, and high-speed quantum information processor.