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Optics Express

Multifunction integrated lithium niobate photonic chip for photon pairs generation and manipulation

Tien-Dat Pham, Cheng-Chung Chiu, Pin-Ju Tsai, Yen-Hung Chen

Published Jan 5, 2024• 6 citations
Publisher

Abstract

We report on a unique photonic quantum source chip highly integrating four-stage photonic elements in a lithium niobate (LN) waveguide circuit platform, where an aperiodically poled LN (APPLN) electro-optic (EO) polarization mode converter (PMC) is sandwiched between two identical type-0 PPLN spontaneous parametric down-converters (SPDCs), followed by an EO phase controller (PC). These core nonlinear optic and EO building blocks on the chip are systematically characterized stage by stage to show its high performance as an integrated quantum source. The APPLN EO PMC, optimally constructed by a genetic algorithm, is characterized to have a broad bandwidth (>13 nm), benefiting an efficient control of broadband type-0 SPDC photon pairs featuring a short correlation time. We demonstrate an efficient conversion of the |VV› photon-pair state generated from the first PPLN SPDC stage to the |HH› state through the APPLN EO PMC stage over its operating bandwidth, a broadband or broadly tunable polarization-entangled state can thus be possibly produced via the superposition of the |VV› state generated from the other PPLN SPDC on the third stage of the chip. Such a state can be further manipulated into two of the Bell states if the relative phases between the two polarization states can be properly modulated through the EO PC on the fourth stage of the chip. Such a multifunction integrated quantum photonic source chip can be of high value to developing a compact, efficient, and high-speed quantum information processor.

DOI
10.1364/oe.509229

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We report on a unique photonic quantum source chip highly integrating four-stage photonic elements in a lithium niobate (LN) waveguide circuit platform, where an aperiodically poled LN (APPLN) electro-optic (EO) polarization mode converter (PMC) is sandwiched between two identical type-0 PPLN spontaneous parametric down-converters (SPDCs), followed by an EO phase controller (PC). These core nonlinear optic and EO building blocks on the chip are systematically characterized stage by stage to show its high performance as an integrated quantum source. The APPLN EO PMC, optimally constructed by a genetic algorithm, is characterized to have a broad bandwidth (>13 nm), benefiting an efficient control of broadband type-0 SPDC photon pairs featuring a short correlation time. We demonstrate an efficient conversion of the |VV› photon-pair state generated from the first PPLN SPDC stage to the |HH› state through the APPLN EO PMC stage over its operating bandwidth, a broadband or broadly tunable polarization-entangled state can thus be possibly produced via the superposition of the |VV› state generated from the other PPLN SPDC on the third stage of the chip. Such a state can be further manipulated into two of the Bell states if the relative phases between the two polarization states can be properly modulated through the EO PC on the fourth stage of the chip. Such a multifunction integrated quantum photonic source chip can be of high value to developing a compact, efficient, and high-speed quantum information processor.
Quantum photonics has advanced rapidly and become a leading approach for developing a broad range of quantum technologies, including quantum communications, quantum information processing, quantum computing, and quantum sensing. Besides, the emerging photonic integrated circuits (PIC) technology has been widely used to implement versatile optical elements advantageous for different quantum applications. For example, PIC-based devices have functioned as building blocks, such as photonic qubit sources, linear optical circuits, modulators, and even single-photon detectors, for realizing highly integrated, large-scale quantum computing schemes. In such a powerful quantum photonic integrated circuits (QPIC) scheme, the creation, manipulation, and testing of quantum entanglement states from the generated qubits via a reconfigurable photonic circuitry are essential. Though the state-of-the-art PIC technology is established based on Si photonics due to its widely mature nanophotonic circuit (waveguide) fabrication technology supported by the existing immense semiconductor industry, Si-based PIC has limitations in implementing efficient and fast active elements that usually demand a quadratic nonlinearity. Lithium niobate (LN), renowned as “the silicon of photonics”, has long been a popular material widely used in integrated-optical and nonlinear-optical applications. A great variety of passive and active photonic elements have been realized in the LN platform. Recently, a novel material based on high-quality single-crystalline films of LN, known as thin-film LN on insulator (LNOI), has been developed and has soon drawn enormous attention for its greatly promising ability to realize nanoscale PIC/QPIC in this iconic optical material platform. In this presentation, we report our recent studies on several key LN PIC building blocks for developing novel quantum photonic sources and circuits, including highly integrated photonic-circuit periodically poled lithium niobate (PPLN) chips for photon-pair generation and manipulation, for high-dimensional frequency-entangled qudit production, for time-frequency grid-state generation, for continuous-variable squeezed vacuum state generation, and their potential applications to quantum computing/communication/sensing technology. Besides, a PP-LNOI electro-optic (EO) polarization mode converter (PMC) useful for demonstrating fast control of quantum polarization states and other LNOI circuit elements as QPIC building blocks will also be presented.
We propose to integrate the electro-optic (EO) tuning function into on-chip domain engineered lithium niobate (LN) waveguide. Due to the versatility of LN, both the spontaneously parametric down conversion (SPDC) and EO interaction could be realized simultaneously. Photon pairs are generated through SPDC, and the formation of entangled state is modulated by EO processes. An EO tunable polarization-entangled photon state is proposed. Orthogonally-polarized and parallel-polarized entanglements of photon pairs are instantly switchable by tuning the applied field. The characteristics of the source are theoretically investigated showing adjustable bandwidths and high entanglement degrees. Moreover, other kinds of reconfigurable entanglement are also achievable based on suitable domain-design. We believe tailoring entanglement based on domain engineering is a very promising solution for next generation function-integrated quantum circuits.
We propose to integrate the electro-optic (EO) tuning function into on-chip domain engineered lithium niobate (LN) waveguide. Due to the versatility of LN, both the spontaneously parametric down conversion (SPDC) and EO interaction could be realized simultaneously. Photon pairs are generated through SPDC, and the formation of entangled state is modulated by EO processes. An EO tunable polarization-entangled photon state is proposed. Orthogonally-polarized and parallel-polarized entanglements of photon pairs are instantly switchable by tuning the applied field. The characteristics of the source are theoretically investigated showing adjustable bandwidths and high entanglement degrees. Moreover, other kinds of reconfigurable entanglement are also achievable based on suitable domain-design. We believe tailoring entanglement based on domain engineering is a very promising solution for next generation function-integrated quantum circuits.
A consequent tendency toward high-performance quantum information processing is to develop the fully integrated photonic chip. Here, we report the on-chip generation and manipulation of entangled photons based on reconfigurable lithium-niobate waveguide circuits. By introducing a periodically poled structure into the waveguide circuits, two individual photon-pair sources with a controllable electro-optic phase shift are produced within a Hong-Ou-Mandel interferometer, resulting in a deterministically separated identical photon pair. The state is characterized by 92.9±0.9% visibility Hong-Ou-Mandel interference. The photon flux reaches ∼1.4×10(7) pairs nm-1 mW-1. The whole chip is designed to contain nine similar units to produce identical photon pairs spanning the telecom C and L band by the flexible engineering of nonlinearity. Our work presents a scenario for on-chip engineering of different photon sources and paves the way to fully integrated quantum technologies.
We propose to integrate the electro-optic tuning function into polarization-entangled photon pair generation process in a periodically poled lithium niobate (PPLN). Due to the versatility of PPLN, both the spontaneously parametric down conversion and electro-optic polarization rotation effects could be realized simultaneously. Orthogonally-polarized and parallel-polarized photon pairs thus are instantly switchable by tuning the applied field. The characteristics of the source are investigated showing adjustable bandwidths and high entanglement degrees. Moreover, other kinds of reconfigurable entanglement are also achievable based on suitable domain-design. We believe the domain engineering is a very promising solution for next generation function-integrated quantum circuits.