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Global control and thermal management for silicon spin qubits

De Kruijf, Antonius Franciscus Mattheus (Mathieu)

Published Aug 28, 2025• 0 citations
OpenAlex

Abstract

Electron-spin qubits hosted in silicon are a promising platform for quantum computing, since in recent years operation and readout fidelities have exceeded the fault tolerant threshold. Now the manufacturing techniques used to fabricate these devices have to be scaled up. To enable scaling the number of qubits beyond 1000, the quantum processor needs to be integrated with local control electronics. However, the heat dissipated by operation of these electronic control circuits can negatively affect qubit performance. In this work, I develop a primary temperature sensor based on a quantum dot, to monitor the qubit temperature under varying conditions. Real-time monitoring of the local temperature can be used to study the impact of on-chip dissipated heat on the qubit. These sensors are used to define a power budget for integrated electronics. Furthermore, a simple thermal model is developed to predict thermal transport in a quantum chip. This methodology is universal and can be applied to any qubit platform with a local temperature sensor. Finally, I compare the performance of this quantum dot thermometer against other cryogenic thermometers and find this primary thermometer is more sensitive than other common thermometry techniques. To reduce the number of control lines required to control individual qubits, I investigate the use of a 3D microwave resonator to deliver a global oscillating magnetic field to control electron spin qubits. When using the resonator to rotate electron spins, no spin flips are detected. This is attributed to a significant decrease in resonator quality factor which originates from materials with a different thermal contraction. This leads to a misalignment of the two sapphire ring oscillators making up the resonator. Despite this, I’ve used these experiments to characterize various types of charge sensors, and I have identified the RF-SET and RF-SEB as the best sensors for near term applications.

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•Dec 31, 2016•1 citation
Electron-spin qubits hosted in silicon are a promising platform for quantum computing, since in recent years operation and readout fidelities have exceeded the fault tolerant threshold. Now the manufacturing techniques used to fabricate these devices have to be scaled up. To enable scaling the number of qubits beyond 1000, the quantum processor needs to be integrated with local control electronics. However, the heat dissipated by operation of these electronic control circuits can negatively affect qubit performance. In this work, I develop a primary temperature sensor based on a quantum dot, to monitor the qubit temperature under varying conditions. Real-time monitoring of the local temperature can be used to study the impact of on-chip dissipated heat on the qubit. These sensors are used to define a power budget for integrated electronics. Furthermore, a simple thermal model is developed to predict thermal transport in a quantum chip. This methodology is universal and can be applied to any qubit platform with a local temperature sensor. Finally, I compare the performance of this quantum dot thermometer against other cryogenic thermometers and find this primary thermometer is more sensitive than other common thermometry techniques. To reduce the number of control lines required to control individual qubits, I investigate the use of a 3D microwave resonator to deliver a global oscillating magnetic field to control electron spin qubits. When using the resonator to rotate electron spins, no spin flips are detected. This is attributed to a significant decrease in resonator quality factor which originates from materials with a different thermal contraction. This leads to a misalignment of the two sapphire ring oscillators making up the resonator. Despite this, I’ve used these experiments to characterize various types of charge sensors, and I have identified the RF-SET and RF-SEB as the best sensors for near term applications.
A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control lines however, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware. A promising solution is to co-locate the control system proximal to the qubit platform at milli-kelvin temperatures, wired-up via miniaturized interconnects. Even so, heat and crosstalk from closely integrated control have potential to degrade qubit performance, particularly for two-qubit entangling gates based on exchange coupling that are sensitive to electrical noise. Here, we benchmark silicon MOS-style electron spin qubits controlled via heterogeneously-integrated cryo-CMOS circuits with a low enough power density to enable scale-up. Demonstrating that cryo-CMOS can efficiently enable universal logic operations for spin qubits, we go on to show that mill-kelvin control has little impact on the performance of single- and two-qubit gates. Given the complexity of our milli-kelvin CMOS platform, with some 100-thousand transistors, these results open the prospect of scalable control based on the tight packaging of spin qubits with a chiplet style control architecture.
The growing interest in quantum computers has triggered various approaches for the realization of a large-scale quantum processor that can eventually outperform classical high-performance computers. Quantum computers are attracting increasing attention for their potential to enormously accelerate the simulation of quantum systems and the solution of optimization problems, promising an immense impact, particularly in fields such as chemistry, medicine, and cybersecurity. Although it is still a long way to a practical quantum device, the progress over the last decades has shown encouraging results for a so far limited number of quantum bits, or qubits for short, which represent the computational units of the processor. One promising platform for the implementation of qubits is the spin of charge carriers in semiconductor quantum dots. Especially the use of purified silicon as a host material has significantly improved the performance of quantum operations. Advanced fabrication techniques from the established semiconductor industry in principle allow for the manufacturing of a large number of qubits on a small chip, making them specifically competitive from the perspective of scalability. In this thesis, we investigate challenges for electron spin qubits, particularly in the context of scaling to large qubit arrays for quantum computation. We evaluate the performance of quantum gates, present error mitigation strategies, and propose new quantum operations for two particular spin qubit implementations. In a dense array of Loss-DiVincenzo spin qubits on a chip, quantum information can be electrically controlled by microwave pulses. For neighboring qubits, capacitive couplings of nearby electrodes lead to crosstalk that affects the quantum computation. The first examination in this thesis addresses the effect of crosstalk on idling and operating spin qubits due to an interfering microwave drive. After the analysis and characterization of the performance, we suggest mitigation protocols for different constellations of important quantum gates, which can be easily implemented experimentally. We further show how to reduce crosstalk in a two-qubit gate using an asymmetric driving scheme, resulting in an enormous improvement of the gate performance, and may be used to generally overcome the obstacle of crosstalk. An additional source of errors in spin qubit registers originates from the finite residual exchange interaction between neighboring qubits. It arises due to a finite overlap of the electron wave functions and is caused by the limited speed at which the applied voltages can be controlled. We evaluate the fidelity of doing quantum operations under these circumstances with a varying number of neighboring qubits and present robust mitigation schemes with a decent performance also in the presence of noise. Besides crosstalk, another crucial observation in experiments using microwaves is the heating caused by the delivery of high-power radio frequency pulses to the quantum chip and results in a change of the qubit properties. We therefore investigate the impact of phonons on the energy levels in spin qubits to identify a temperature-dependent correction to the qubit state splitting. As microwave pulses are associated with potential errors, exchange-only qubits represent a promising alternative to achieve universal quantum computation only using baseband control. Therefore, we shift our focus towards exchange-only qubits and outline the main error sources in these systems, including residual exchange interactions between spins, charge noise from the applied voltages, and magnetic fluctuations in the material. A consequential complication of this implementation is that the quantum information can leak out of the qubit states. This effect, however, can be reduced in the presence of a finite magnetic field, as we will demonstrate in this thesis. The gate construction for exchange-only qubits usually requires more pulse steps than in the previous qubit type. Nevertheless, if exchange interactions are switched on simultaneously, this can result in faster quantum gates, as we demonstrate in this thesis. Especially the discovery of a quantum operation that introduces relative phases between computational and leakage states can be of interest for the construction of two-qubit gates and will be discussed in an example for a special operation space.
Abstract A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction1–3. However, with each physical qubit needing multiple control lines, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware4–6. A promising solution is to co-locate the control system proximal to the qubit platform at milli-kelvin temperatures, wired up by miniaturized interconnects7–10. Even so, heat and crosstalk from closely integrated control have the potential to degrade qubit performance, particularly for two-qubit entangling gates based on exchange coupling that are sensitive to electrical noise11,12. Here we benchmark silicon metal-oxide-semiconductor (MOS)-style electron spin qubits controlled by heterogeneously integrated cryo-complementary metal-oxide-semiconductor (cryo-CMOS) circuits with a power density sufficiently low to enable scale-up. Demonstrating that cryo-CMOS can efficiently perform universal logic operations for spin qubits, we go on to show that milli-kelvin control has little impact on the performance of single- and two-qubit gates. Given the complexity of our sub-kelvin CMOS platform, with about 100,000 transistors, these results open the prospect of scalable control based on the tight packaging of spin qubits with a ‘chiplet-style’ control architecture.
Silicon spin qubits are a leading candidate for large-scale quantum computing owing to their compatibility with semiconductor manufacturing. However, scaling to useful fault-tolerant processors will likely generate thermal loads that exceed the cooling power available at millikelvin temperatures. Raising the operating temperature eases cooling requirements but reduces gate fidelity, increasing the overhead of quantum error correction. Identifying the operating temperature that minimizes total power consumption is therefore a key challenge for commercially viable quantum computers. Here, we use gate set tomography to benchmark two-qubit silicon chips fabricated in both industrial and academic environments over a range of temperatures. Elevated temperatures substantially shorten coherence times and increase gate and state-preparation-and-measurement infidelities. Based on these measurements, we develop a general power model for silicon quantum computers that combines cryogenic cooling requirements with error-correction overheads. We show that a finite optimal operating temperature exists and is strongly influenced by a crossover temperature near 1 K in current devices, above which gate fidelity degrades rapidly. These results connect device-level fidelity limitations to system-level power requirements, providing design guidelines for large-scale silicon quantum computers.
Spin qubits in gate-defined semiconductor quantum dots are a promising platform for realising a scalable quantum computer. This platform encodes quantum information into the intrinsic angular momentum (spin) of individual electrons or holes. In particular, hole spins in quantum dots enable the possibility of all-electrical spin control due to their intrinsic spin-orbit coupling. One important criterion of a quantum computer is the ability to reliably read out the state of the qubit. This is done by mapping spin information to the charge degree of freedom, combined with a method for charge detection. Charge detection can be facilitated by coupling a resonator directly to the quantum dot gate or to a charge sensor and measuring the resonator's phase or amplitude response. In this thesis, we describe a set of experiments relating to the implementation of hole spin qubit readout with superconducting resonators. First, we study gate-based charge sensing in a Si fin field-effect transistor (finFET) device using a superconducting NbN nanowire resonator. We find that the resonator amplifies capacitive crosstalk when electrical control pulses are applied to gate electrodes in this device. This occurs whenever a spectral component of qubit control pulses overlaps with the resonance frequency, which we show may occur for both baseband and radio-frequency (RF) drive signals. We quantify this crosstalk in a transport-based method, and attribute its source to the capacitance between the bondpads of neighbouring gate electrodes. In a second experiment, we use an RF charge sensor with the same nanowire technology to read out hole spin qubits formed in the quantum well of a Ge/SiGe heterostructure. A screening layer approach is used to facilitate RF matching due to large RF dissipation found in the heterostructure. We implement a double-latched readout scheme in this system to reduce errors arising from both spin and charge decay during readout. The spin-to-charge conversion process and its dependence on magnetic field orientation is studied. Spin and charge decay processes arising after spin-to-charge conversion are mitigated by choosing an optimal working point for the field orientation, field amplitude and readout pulse times. By doing so, we achieve an average single-shot state-preparation-and-measurement fidelity of 97%, primarily bounded by imperfect state preparation and limited signal-to-noise ratio. Finally, we study coplanar waveguide resonators fabricated from NbN. We investigate the feasibility of integrating this type of resonator onto the same chip as the Si finFET quantum dots. We then develop a novel resonator readout technique by the interference of two microwave sidebands. We demonstrate the insensitivity of this technique to common-mode phase and amplitude noise both theoretically and experimentally. This technique is then used to study resonator noise arising from two-level system defects. These results highlight both the practical constraints and the potential for achieving high readout fidelities using resonator-based hole spin qubit readout. This work establishes a blueprint for mitigating resonator-induced crosstalk and enabling high-fidelity readout in lossy materials by incorporating a screening layer.
Quantum computation has been a major focus of research in the past two decades, with recent experiments demonstrating basic algorithms on small numbers of qubits. A large-scale universal quantum computer would have a profound impact on science and technology, providing a solution to several problems intractable for classical computers. To realise such a machine, today's small experiments must be scaled up, and a system must be built which provides control and measurement of many hundreds of qubits. A device of this scale is challenging: qubits are highly sensitive to their environment, and sophisticated isolation techniques are required to preserve the qubits' fragile states. Solid-state qubits require deep-cryogenic cooling to suppress thermal excitations. Yet current state-of-the-art experiments use room-temperature electronics which are electrically connected to the qubits. This thesis investigates various scalable technologies and techniques which can be used to control quantum systems. With the requirements for semiconductor spin-qubits in mind, several custom electronic systems, to provide quantum control from deep cryogenic temperatures, are designed and measured. A system architecture is proposed for quantum control, providing a scalable approach to executing quantum algorithms on a large number of qubits. Control of a gallium arsenide qubit is demonstrated using a cryogenically operated FPGA driving custom gallium arsenide switches. The cryogenic performance of a commercial FPGA is measured, as the main logic processor in a cryogenic quantum control system, and digital-to-analog converters are analysed during cryogenic operation. Recent work towards a 100-qubit cryogenic control system is shown, including the design of interconnect solutions and multiplexing circuitry. With qubit fidelity over the fault-tolerant threshold for certain error correcting codes, accompanying control platforms will play a key role in the development of a scalable quantum machine.