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Flying qubit using ultra-short single-electron charge pulses

Clément Geffroy

Published Dec 21, 2023• 0 citations
Publisher

Abstract

The second quantum revolution of the 20th century contributed to a technological expansion in solid-state physics. Modern nanofabrication coupled to material processing techniques have facilitated the development of on-demand single-electron sources. With their remarkable precision, they are currently used for metrology purposes and hold key potential for the recent field of research of electron quantum optics, including a promising candidate for quantum information: the electron flying qubit. These quantum bits are created by short voltage pulses and manipulation of their quantum state occurs on-the-fly. The shortest voltage pulse reported so far attains 27 ps, on-chip, in a cryogenic environment. However, suffering from attenuation and dispersion in coaxial lines, accessibility to electronic quantum regimes at faster time scale remains out-of-reach.On the contrary, empowered by the advent of ultrafast lasers and progress in photonics and plasmonics, photo-conductive-switch technology can allow the generation of electromagnetic pulses with picosecond duration. The large bandwidth of these THz opto-electronic technologies could overcome the technical bottleneck faced by standard electronic equipment. While they have been widely developed for room temperature applications, demonstrations of their integration along-side a quantum architecture in a cryogenic environment are still limited. The realisation of such an experiment would unlock new research directions for studying the dynamics of solid-state electronic quantum devices.In this manuscript, we present the development of an experimental setup to generate picosecond voltage pulses in a cryogenic environment for flying qubit applications. A femtosecond laser generates pulses that are injected into optical fibres and integrated at low temperatures. Fabricated on the surface of Low Temperature grown GaAs (LT-GaAs), a photoconductive-switch is co-integrated to the quantum circuit formed on a high mobility two-Dimensional Electron Gas (2DEG). Owing to the extremely fast opto-electronic response of the LT-GaAs, the photo-conductive device converts optical pulses into voltage pulses with a duration as short as a few picoseconds. Using a THz CoPlanar Waveguide (CPW) circuit, the pulse is conveyed toward the 2DEG, where it is used as an ultra-short single-electron source.To perform pump-probe measurement and resolve the dynamic profile of such pulses, an original experimental setup, involving piezo-electric positioners and alignment protocols at low-temperatures, was implemented. As proof of concept, we first report the characterisation at 300 K of electronic pulses with 1.9 ps duration. In a second step, we cool down the system to 4 K and measure 2.3 ps wide pulses, thus expanding the proof of concept to cryogenic environments. Then, by integrating a 2DEG structure along-side the THz circuit, we were able to excite THz plasmons in a Fabry-Pérot cavity. The characteristic frequency of their fundamental mode was compared to an analytical model that revealed information about the carrier density of the electron gas under illumination. In parallel, extensive developments were carried out on the design of CPWs in order to minimise undesirable signal reflections as well as dispersion losses. Finally, with the prospect of measuring and controlling the propagation of picosecond electron pulse in quantum channels directly with ultrafast THz electrostatic gates, the fabrication of the next generation of devices was initiated. This work will pave the way for on-chip integration of picosecond voltage pulses into quantum nanoelectronics devices and ultrafast control of electronic flying qubits.

DOI
10.70675/1cff1312zbe60z4f99z8388z874573846f82

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The second quantum revolution of the 20th century contributed to a technological expansion in solid-state physics. Modern nanofabrication coupled to material processing techniques have facilitated the development of on-demand single-electron sources. With their remarkable precision, they are currently used for metrology purposes and hold key potential for the recent field of research of electron quantum optics, including a promising candidate for quantum information: the electron flying qubit. These quantum bits are created by short voltage pulses and manipulation of their quantum state occurs on-the-fly. The shortest voltage pulse reported so far attains 27 ps, on-chip, in a cryogenic environment. However, suffering from attenuation and dispersion in coaxial lines, accessibility to electronic quantum regimes at faster time scale remains out-of-reach.On the contrary, empowered by the advent of ultrafast lasers and progress in photonics and plasmonics, photo-conductive-switch technology can allow the generation of electromagnetic pulses with picosecond duration. The large bandwidth of these THz opto-electronic technologies could overcome the technical bottleneck faced by standard electronic equipment. While they have been widely developed for room temperature applications, demonstrations of their integration along-side a quantum architecture in a cryogenic environment are still limited. The realisation of such an experiment would unlock new research directions for studying the dynamics of solid-state electronic quantum devices.In this manuscript, we present the development of an experimental setup to generate picosecond voltage pulses in a cryogenic environment for flying qubit applications. A femtosecond laser generates pulses that are injected into optical fibres and integrated at low temperatures. Fabricated on the surface of Low Temperature grown GaAs (LT-GaAs), a photoconductive-switch is co-integrated to the quantum circuit formed on a high mobility two-Dimensional Electron Gas (2DEG). Owing to the extremely fast opto-electronic response of the LT-GaAs, the photo-conductive device converts optical pulses into voltage pulses with a duration as short as a few picoseconds. Using a THz CoPlanar Waveguide (CPW) circuit, the pulse is conveyed toward the 2DEG, where it is used as an ultra-short single-electron source.To perform pump-probe measurement and resolve the dynamic profile of such pulses, an original experimental setup, involving piezo-electric positioners and alignment protocols at low-temperatures, was implemented. As proof of concept, we first report the characterisation at 300 K of electronic pulses with 1.9 ps duration. In a second step, we cool down the system to 4 K and measure 2.3 ps wide pulses, thus expanding the proof of concept to cryogenic environments. Then, by integrating a 2DEG structure along-side the THz circuit, we were able to excite THz plasmons in a Fabry-Pérot cavity. The characteristic frequency of their fundamental mode was compared to an analytical model that revealed information about the carrier density of the electron gas under illumination. In parallel, extensive developments were carried out on the design of CPWs in order to minimise undesirable signal reflections as well as dispersion losses. Finally, with the prospect of measuring and controlling the propagation of picosecond electron pulse in quantum channels directly with ultrafast THz electrostatic gates, the fabrication of the next generation of devices was initiated. This work will pave the way for on-chip integration of picosecond voltage pulses into quantum nanoelectronics devices and ultrafast control of electronic flying qubits.
Electronic flying qubits offer an interesting alternative to photonic qubits: electrons propagate slower, hence easier to control in real time, and Coulomb interaction enables direct entanglement between different qubits. Although their coherence time is limited, flying electrons in the form of picosecond plasmonic pulses could be competitive in terms of the number of achievable coherent operations. The key challenge in achieving this critical milestone is the development of a new technology capable of injecting ‘on-demand’ single-electron wavepackets into quantum devices, with temporal durations comparable to or shorter than the device dimensions. Here, we take a significant step towards achieving this regime in a quantum nanoelectronic system by injecting ultrashort single-electron plasmonic pulses into a 14-micrometer-long Mach-Zehnder interferometer. Our results establish that quantum coherence is robust under the on-demand injection of ultrashort plasmonic pulses, as evidenced by the observation of coherent oscillations in the single-electron regime. Building on this, our results demonstrate the existence of a “non-adiabatic" regime that is prominent at high frequencies. This result highlights the potential of flying qubits as a promising alternative to localised qubit architectures, offering advantages such as a reduced hardware footprint, enhanced connectivity, and scalability for quantum information processing. The development of electronic flying qubits requires the ability to generate and control single-electron excitations. Here the authors demonstrate quantum coherence of ultrashort single-electron plasmonic pulses in an electronic Mach-Zehnder interferometer, revealing a non-adiabatic regime at high frequencies.
In this report we review the present state of the art of the control of propagating quantum states at the single-electron level and its potential application to quantum information processing. We give an overview of the different approaches that have been developed over the last few years in order to gain full control over a propagating single-electron in a solid-state system. After a brief introduction of the basic concepts, we present experiments on flying qubit circuits for ensemble of electrons measured in the low frequency (DC) limit. We then present the basic ingredients necessary to realise such experiments at the single-electron level. This includes a review of the various single-electron sources that have been developed over the last years and which are compatible with integrated single-electron circuits. This is followed by a review of recent key experiments on electron quantum optics with single electrons. Finally we will present recent developments in the new physics that has emerged using ultrashort voltage pulses. We conclude our review with an outlook and future challenges in the field.
In this report we review the present state of the art of the control of propagating quantum states at the single-electron level and its potential application to quantum information processing. We give an overview of the different approaches that have been developed over the last few years in order to gain full control over a propagating single-electron in a solid-state system. After a brief introduction of the basic concepts, we present experiments on flying qubit circuits for ensemble of electrons measured in the low frequency (DC) limit. We then present the basic ingredients necessary to realise such experiments at the single-electron level. This includes a review of the various single-electron sources that have been developed over the last years and which are compatible with integrated single-electron circuits. This is followed by a review of recent key experiments on electron quantum optics with single electrons. Finally we will present recent developments in the new physics that has emerged using ultrashort voltage pulses. We conclude our review with an outlook and future challenges in the field.
Impulsions ultra-courte d'électron unique pour les qubits volants La seconde révolution quantique du XXe siècle a contribué à un essor technologique en physique du solide. Les techniques d'ingénierie des matériaux couplées à celles de nanofabrication moderne ont favorisé le perfectionnement de sources d'électrons uniques sur demande. De par leur incroyable précision, elles sont désormais utilisées en métrologie et leur potentiel s'étend au récent domaine de l'optique quantique électronique, notamment à un candidat prometteur pour l’information quantique : le qubit volant électronique. Ces bits quantiques sont créés par de courtes impulsions de tension et la manipulation de leur état quantique se fait à la volée. À ce jour, l’impulsion de tension la plus courte atteint 27 ps, sur puce, dans un environnement cryogénique. Cependant, en raison de l'atténuation et de la dispersion du signal dans les lignes coaxiales, l'accès à des régimes quantiques électroniques d’échelle temporelle plus rapide demeure hors de portée.En revanche, grâce à l'avènement des lasers à impulsions ultracourtes et aux progrès en photonique et plasmonique, la technologie des photocommutateurs peut permettre la génération d'impulsions électromagnétiques de l'ordre de la picoseconde. La large bande passante de ces technologies opto-électroniques THz pourrait venir à bout de la barrière technique à laquelle sont confrontés les équipements électroniques standards. Bien que largement développées dans le cadre d'applications à température ambiante, les démonstrations d'intégration de ces technologies à une architecture quantique en environnement cryogénique restent toujours peu nombreuses. La réalisation d'une telle expérience débloquerait de nouvelles voies de recherche pour l'étude des dynamiques des dispositifs quantiques électroniques en physique du solide.Dans ce manuscrit, nous présentons la mise au point d'une installation expérimentale pouvant générer des impulsions de tension picoseconde en environnement cryogénique pour des applications de qubits volants. Un laser femtoseconde génère des impulsions qui sont injectées dans des fibres optiques intégrées à basse température. Fabriqué à la surface de GaAs basse température (LT-GaAs), un photocommutateur est cointégré au circuit quantique formé à partir d'un gaz d'électrons bidimensionnels (2DEG) à haute mobilité. Du fait de la réponse opto-électronique extrêmement rapide du LT-GaAs, le photocommutateur convertit les impulsions optiques en impulsions de tension d'une durée de quelques picosecondes seulement. Grâce à des guides d'ondes coplanaires (CPW) THz, l'impulsion est acheminée vers le 2DEG, où elle est utilisée comme source d'électrons uniques ultracourts.Pour effectuer la mesure pompe-sonde et résoudre le profil dynamique de telles impulsions, une installation expérimentale originale, impliquant des positionneurs piézo-électriques et des protocoles d'alignement à basses températures, a été mise en place. Comme preuve de concept, nous rapportons d'abord la caractérisation à 300 K d'impulsions électroniques d'une durée de 1.9 ps. Dans un deuxième temps, nous refroidissons le système à 4K, élargissant la preuve de concept aux environnements cryogéniques par la mesure d'impulsions de 2.3 ps. Ensuite, en intégrant une structure 2DEG au circuit THz, des excitations de plasmons THz ont pu être observées dans une cavité Fabry-Pérot. La fréquence de leur mode fondamental a été comparée à un modèle analytique, révélant des informations sur la densité de porteur du gaz électronique sous illumination. Parallèlement, des développements importants ont été menés sur la conception des CPWs dans le but de minimiser les réflexions indésirables du signal ainsi que les pertes par dispersion. Ces travaux ouvriront la voie à l'intégration d'impulsions de tension picoseconde dans les dispositifs quantiques nanoélectroniques et le contrôle de qubits volants électroniques par des grilles électrostatiques THz ultrarapides.
Over the last few decades there has been strong interest in quantum information systems based on photonic qubits. Devices able to emit pure single-photon states on demand and detect incoming single photons in the system are fundamental building blocks for the realisation of a quantum photonic scheme. Advances in controlling single carriers have made it possible to transport single electrons using surface acoustic waves (SAWs). In a lateral n-i-p junction SAW-driven single-electron transport can be exploited to pump single electrons across the junction and generate single photons. In this work, devices have been developed in which both electrons and holes can be induced in an undoped GaAs/AlGaAs 15nm quantum well by gates to form a lateral n-i-p junction. The junction is confined into a quasi-1D channel laterally by etching and side gates. Light emission is observed when a 1 or 3 GHz SAW drives a current, by pumping electrons over the potential hill in the intrinsic region. SAW-driven electroluminescence has been characterised in the regime where less than one electron is transported per cycle on average. Time-resolved electroluminescence has been used to extract the electron recombination time and to quantify the contributions from electromagnetic crosstalk and the SAW. In a device without significant crosstalk, the degree of second-order coherence, g(2)(0) , shows the signature of antibunching. Hole SAW-pumping has been investigated as an alternative to electron pumping, showing a shorter recombination time. The dynamics has been further investigated with time-resolved and energy measurements at the junction, using a sub-micron positioner with lens assembly to scan along the pumping direction. A key requirement for practical quantum devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Using the same type of heterostructure, photons are detected by collecting and measuring the photo-generated carriers. An external light source sends photons into the system, and when they are absorbed in the quantum well, they create electron-hole pairs. The photo-generated carriers are separated and transported by a SAW together with an electric field applied by gates on the surface. The carriers are then collected by ohmic contacts, in order to extract information about the number of photons absorbed. Using the same 15nm GaAs/AlGaAs quantum well as for the single- photon source, an acousto-electric photon detector has been realised and characterised. Single-photon sensitivity can be achieved by measuring the photo-generated charges at single-particle level. The possibility to include single-electron and single-hole charge readout using quantum dots and quantum point contacts has been investigated.
Quantum bit (qubit) control and readout requires controller-qubit-observer systems for rapid control signal generation and injection to the qubit gates, and observation of their final state projections. Conventionally, for solid-state qubits, this is achieved by generating the control signal at 300 K and transmitting it along very long coaxial cables that span from 300 K to sub-K (typically les 500 mK), then reading out the response from charge proximity sensors such as single-electron transistors along similar lengths of cable. Our approach is to fabricate the classical controller and observer circuits using a commercial foundry processed silicon-on-sapphire (SOS) RFCMOS technology for operation at low temperatures (either at 4.2 K, 1 K, or sub-K). We have demonstrated SOS-CMOS NFET and PFET device operation at 4.2 K, and sub-K that showed deviations from their 300 K characteristics, but with further experiments these were shown to have minimal effects on control circuit function. Using these results, we have fabricated and demonstrated a low-power proof-of-concept SOS-CMOS controller circuit (monostable 100 ps voltage-pulse generator) that can operate at sub-K temperatures in a dilution refrigerator. We briefly discuss experimental and conceptual schemes with which we can develop qubit control systems for cryogenic and lower temperatures. These low temperature experiments also demonstrate that commercial SOS RF-CMOS technology can be feasible for other low temperature and low power applications.