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Refractive nonlinearity of wide-band semiconductors and applications

Anatoly A. Borshch, М. С. Бродин, V. A. Volkov

Published Jan 1, 1990• 9 citations

Abstract

Part 1 Non-linear polarizability of semi-conductors: the nature of non-linear polarizability contribution of different elementary excitation to non-linearity of semi-conductors non-linear refraction of semi-conductors reactive mechanisms of refractive index non-linearity active mechanisms of refractive index non-linearity. Part 2 One-beam self-action of light in wide-gap semi-conductors: experimental methods of measuring the coefficients of refraction non-linearity and dynamics of self-action in semi-conductors experimental methods of measuring the coefficents of refraction non-linearity and dynamics of self-action in semi-conductors peculiarities of self-action of laser beams in wide-gap semiconductors the study of refractive index non-linearity in semi-conductors A2B6 anisotropy of refractive index nonlinearity in semi-conductors A2B6 the study of refractive index non-linearity in semi-conductors A2B6 - A3B5 the study of refractive index non-linearity in semi-conductors A4B4. Part 3 Two-beam light interaction in wide-gap semi-conductors: scalar self-diffraction of light waves in semi-conductors vector self-diffraction of light waves in semi-conductors experimental studies of dynamic holograms in wide-gap semi-conductors. Part 4 Four-wave light mixing in wide-gap semi-conductors: theory of degenerate six-photon mixing in semi-conductors experimental set up efficient phase conjugation under degenerate four-wave mixing and phase synchronism violation PC experiments under degenerate four-wave mixing in other wide-gap simi-conductors. Part 5 Optical bistability in wide-gap semi-conductors: classification of optical bistable schemes resonatorless optical bistable schemes.

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Part 1 Non-linear polarizability of semi-conductors: the nature of non-linear polarizability contribution of different elementary excitation to non-linearity of semi-conductors non-linear refraction of semi-conductors reactive mechanisms of refractive index non-linearity active mechanisms of refractive index non-linearity. Part 2 One-beam self-action of light in wide-gap semi-conductors: experimental methods of measuring the coefficients of refraction non-linearity and dynamics of self-action in semi-conductors experimental methods of measuring the coefficents of refraction non-linearity and dynamics of self-action in semi-conductors peculiarities of self-action of laser beams in wide-gap semiconductors the study of refractive index non-linearity in semi-conductors A2B6 anisotropy of refractive index nonlinearity in semi-conductors A2B6 the study of refractive index non-linearity in semi-conductors A2B6 - A3B5 the study of refractive index non-linearity in semi-conductors A4B4. Part 3 Two-beam light interaction in wide-gap semi-conductors: scalar self-diffraction of light waves in semi-conductors vector self-diffraction of light waves in semi-conductors experimental studies of dynamic holograms in wide-gap semi-conductors. Part 4 Four-wave light mixing in wide-gap semi-conductors: theory of degenerate six-photon mixing in semi-conductors experimental set up efficient phase conjugation under degenerate four-wave mixing and phase synchronism violation PC experiments under degenerate four-wave mixing in other wide-gap simi-conductors. Part 5 Optical bistability in wide-gap semi-conductors: classification of optical bistable schemes resonatorless optical bistable schemes.

Nonlinear optical properties of laser-excited semiconductors are discussed, and the applications to optical bistability and optical logic are reviewed. The physical origin of the nonlinearities is analyzed in terms of the many-body interactions in the system of electron-hole pairs, causing effects such as plasma screening of the Coulomb interaction, band-gap renormalization, and band filling. Theoretical results for absorption and refractive-index spectra are compared to experimental data obtained for room-temperature GaAs and other semiconductors. The experimental and theoretical results for dispersive optical bistability in semiconductors are summarized, and recent experiments on optical logic gating and pattern recognition are discussed.

Abstract Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent, T2-broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity, X(3) ≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.