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Bulletin of the American Physical Society

Phonon-induced decoherence of Andreev level qubit

Alexander Zazunov, Vitaly S. Shumeiko, Goran P. Wendin, E. N. Bratus’

Published Mar 22, 2005• 0 citations
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We present a detailed theory for the Andreev level qubit, a system consisting of a highly transmissive quantum point contact embedded in a superconducting loop. The two-level Hamiltonian for Andreev levels interacting with quantum phase fluctuations is derived by using a path integral method. We also derive a kinetic equation describing qubit decoherence due to interaction of the Andreev levels with acoustic phonons. The collision terms are nonlinear due to the fermionic nature of the Andreev states, leading to slow nonexponential relaxation and dephasing of the qubit at temperatures smaller than the qubit level spacing.
We investigate the dynamics of a two-level Andreev bound state system in a transmissive quantum point contact embedded in an rf SQUID. Coherent coupling of the Andreev levels to the circulating supercurrent allows manipulation and readout of the level states. The two-level Hamiltonian for the Andreev levels is derived, and the effect of interaction with the quantum fluctuations of the induced flux is studied. We also consider an inductive coupling of qubits and discuss the relevant SQUID parameters for qubit operation and readout.
We theoretically study the dephasing of an Andreev spin qubit (ASQ) due to electric and magnetic noise. Using a tight-binding model, we calculate the Andreev states formed in a Josephson junction where the link is a semiconductor with strong spin-orbit interaction. As a result of both the spin-orbit interaction and induced superconductivity, the local charge and spin of these states vary as a function of externally controllable parameters: the phase difference between the superconducting leads, an applied magnetic field, and filling of the underlying semiconductor. Concomitantly, coupling to fluctuations of the electric or magnetic environment will vary, which informs the rate of dephasing. We qualitatively predict the dependence of dephasing on the nature of the environment, magnetic field, phase difference between the junction, and filling of the semiconductor. Comparing the simulated electric- and magnetic-noise-induced dephasing rate to experiment suggests that the dominant source of noise is magnetic. Moreover, by appropriately tuning these external parameters, we find sweet spots at which we predict an enhancement in ASQ coherence times.