International Conference on Laser, Optical Technology, and Applications (LOTA)
Design of low-loss polarization-insensitive MMI based on silicon nitride
Guan-Zhong Huang, Guowei Zhang, Wei Chen, Fang‐Xiang Wang, Jia-Lin Chen, Jinlu Liu, Bingjie Xu, Zheng‐Fu Han
Abstract
Integrated quantum key distribution (QKD) has achieved substantial advancements across different material platforms. Among these, silicon nitride has attracted widespread attention due to its low loss and compact size. However, silicon nitride exhibits pronounced polarization correlation, which makes it susceptible to unpredictable polarization state rotations induced by the fiber birefringence effect within the channel, thus affecting the normal operation of quantum processes. In this work, we design and fabricate the fundamental devices in QKD systems, namely 1×2 and 2×2 multimode interferometers (MMIs) with low polarization sensitivity and loss. We also improve the splitting balance via parameter optimization based on the particle swarm optimization (PSO) algorithm. Simulation results indicate that the 1×2 (2×2) MMI exhibits a loss of about 0.1 (0.2) dB, along with 0.001 (0.09) dB polarization-dependent loss (PDL) and a splitting ratio nearly 50:50 (±0.3%) at 1550nm, respectively. Test results for the fabricated devices demonstrate that the loss of both MMI types is confined to less than 0.25 dB, their PDL is kept within 0.2 dB, and splitting ratio imbalance is within 1% and exhibits temperature robustness. This research explores compact polarization-insensitive devices via a novel method, thereby laying the foundation for the development of integrated quantum information processing.