We based on integrated silicon-on-insulator platforms design the key components of an on-chip interferometer, beam splitter and directional coupler included, valid in high-visibility interference at telecommunication wavelengths. Special attention is given to the equal-proportion beam splitting and directional coupling, which is achieved by carefully designing the geometric dimension of multi-mode interferometer structure. The proposed interferometer facilitates low loss, broad operating bandwidth, anticipated large tolerance on size variation induced in fabrication procedures, based on a particular wafer with silicon layer thickness of 320 nm. The most highlight property of polarization-insensitive, enables the path-selective qubits generation for bi-polarization that further makes possible quantum key distribution using high dimensional protocols. We numerically demonstrate interference at 1550 nm with visibilities of 99.50% and 93.99% for transverse-electric and transverse-magnetic polarization, respectively, revealing that the proposed interferometer structure is well capable of on-chip optical control especially in quantum optics regime.
We based on integrated silicon-on-insulator platforms design the key components of an on-chip interferometer, beam splitter and directional coupler included, valid in high-visibility interference at telecommunication wavelengths. Special attention is given to the equal-proportion beam splitting and directional coupling, which is achieved by carefully designing the geometric dimension of multi-mode interferometer structure. The proposed interferometer facilitates low loss, broad operating bandwidth, anticipated large tolerance on size variation induced in fabrication procedures, based on a particular wafer with silicon layer thickness of 320 nm. The most highlight property of polarization-insensitive, enables the path-selective qubits generation for bi-polarization that further makes possible quantum key distribution using high dimensional protocols. We numerically demonstrate interference at 1550 nm with visibilities of 99.50% and 93.99% for transverse-electric and transverse-magnetic polarization, respectively, revealing that the proposed interferometer structure is well capable of on-chip optical control especially in quantum optics regime.
An ultra-compact optical quantum router (QR) consisting of a Mach–Zehnder interferometer (MZI) and waveguide tapers is proposed and numerically simulated, using silicon-on-insulator (SOI). The interferometer is designed to work at the center wavelength of 1550 nm with visibilities of 99.65% and 98.80% for TE and TM polarizations, respectively. Using the principle of phase compensation and self-image, the length of the waveguide tapers is shortened by an order of magnitude with the transmission above 95% for both TE and TM polarizations. Furthermore, polarization beam splitters (PBS) with an ultra-compact footprint of 1.4 × 10.4 μm2 with transmissions of 98% for bi-polarizations are achieved by introducing anisotropic metamaterials. The simulated results indicate that the interferometer facilitates low loss, a broad operating spectral range, and a large tolerance to size variation in fabrications. The optical switch possesses the routing function while maintaining the polarization states, which promises to pave the point-to-point BB84 protocol into applications of network-based quantum communication.
Integrated quantum key distribution (QKD) has achieved substantial advancements across different material platforms. Among these, silicon nitride has attracted widespread attention due to its low loss and compact size. However, silicon nitride exhibits pronounced polarization correlation, which makes it susceptible to unpredictable polarization state rotations induced by the fiber birefringence effect within the channel, thus affecting the normal operation of quantum processes. In this work, we design and fabricate the fundamental devices in QKD systems, namely 1×2 and 2×2 multimode interferometers (MMIs) with low polarization sensitivity and loss. We also improve the splitting balance via parameter optimization based on the particle swarm optimization (PSO) algorithm. Simulation results indicate that the 1×2 (2×2) MMI exhibits a loss of about 0.1 (0.2) dB, along with 0.001 (0.09) dB polarization-dependent loss (PDL) and a splitting ratio nearly 50:50 (±0.3%) at 1550nm, respectively. Test results for the fabricated devices demonstrate that the loss of both MMI types is confined to less than 0.25 dB, their PDL is kept within 0.2 dB, and splitting ratio imbalance is within 1% and exhibits temperature robustness. This research explores compact polarization-insensitive devices via a novel method, thereby laying the foundation for the development of integrated quantum information processing.
Silicon-on-insulator (SOI) wafers have been developed for electronic integrated circuits, but are also one of the most promising platforms in photonic integrated circuits due to its low loss, high refractive index, ability to fast phase modulation, and well-developed fabrication technologies. With advantages to handle light with a small volume and high modulation speed, silicon photonics has been intensively investigated as the next generation platform of signal processing, interconnection, and communication devices. Recently, silicon photonics has been attracted great interests in quantum optics communities as optical quantum systems for linear optical quantum computing are achievable using silicon photonic components including beam splitters, phase modulators, and filters and the small footprint of a silicon photonic quantum system has unprecedented performances of high stability and scalability. Here we show our recent results on the fabrication of silicon photonic elements for quantum applications. We fabricated low-loss optical waveguides, efficient fiber-to-waveguide grating couplers, resonator-based optical filters, and tunable beam splitters and tested their performances. A micro-sized heater is attached on a Mach-Zehnder interferometer, showing stable operation as a slow phase modulator. In addition, phase modulators using plasma dispersion effects are under investigation. Finally, the quantum characteristics of photon pairs generated by spontaneous four-wave mixing in silicon waveguides are investigated. These results will be an essential cornerstone for the realization of quantum optical computing and quantum communication devices.
Silicon photonic technologies exploit silicon as an optical material to build a wide array of devices and systems. The flexibility, modularity, and stability of silicon photonic systems provide unprecedented opportunities for next-generation quantum key distribution (QKD) and quantum networking. This doctoral thesis focuses on the design, simulation, fabrication, and experiment of QKD chips based on silicon photonics. Crucial components for QKD chips are designed and fabricated, including the grating coupler, polarization beam splitter, polarization rotator, modulator, photodetector, ring resonator, and interferometer. Using these components, chip-based continuous variable quantum key distribution (CV-QKD) is demonstrated for the first time. The chip-based CV-QKD system is capable of producing a secret key rate of 9.3 kbits/s (under collective attack) at a distance of 100 km in fiber. The successful demonstration of a single chip-based QKD offers new possibilities for low-cost, scalable and portable quantum networks.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Interferometers are essential elements in classical and quantum optical systems. The strictly required stability when extracting the phase of photons is vulnerable to polarization variation and phase shift induced by environment disturbance. Here, we implement polarization-insensitive interferometers by combining silica planar light-wave circuit chips and Faraday rotator mirrors. Two asymmetric interferometers with temperature controllers are connected in series to evaluate the single-photon interference. Average interference visibility over 12 h is above 99%, and the variations are less than 0.5%, even with active random polarization disturbance. The experiment results verify that the hybrid chip is available for high-demand applications like quantum key distribution and entanglement measurement.