High-speed optoelectronic interfaces for RSFQ superconductive electronics
Siham Badi, Pascal Febvre, Hervé Eusèbe, Jean-François Roux, Jean‐Louis Coutaz, Arūnas Krotkus, Bjoern Ebert, H. Toepfer, Th. Ortlepp, F.H. Uhlmann, Jürgen Kunert, Ludwig Fritzsch, H.-G. Meyer
Abstract
The main goal of this work is to evaluate theoretically and experimentally the properties of ultrafast opto-superconducting interfaces used to trigger superconducting digital RSFQ circuits externally and to read the outcoming signal from the rapid single-flux-quantum (RSFQ) circuits. To do this, optoelectronics sampling techniques based on a Ti-Sa femtosecond pulsed laser are used. In a first step, miscellaneous Josephson junction-based devices (series of junctions, SQUIDS, simple RSFQ circuits) have been measured to evaluate the properties of the superconductive devices. In particular, I-V curves and magnetic diffraction patterns curves have been obtained. Since the picosecond pulses carried by the RSFQ circuits are weak, of the order of 1 mV or less, the interfaces with the external world have to be carefully designed. Therefore, the potentialities of different photoconductive switches for ultrafast and sensitive detection of picosecond pulses emitted by superconducting digital circuits are evaluated. To do so, a study of the influence of different electrical parameters associated to the geometry of photoswitches electrodes deposited on LT-GaAs materials is performed. The electrical response of dc-biased photoswitches illuminated by femtosecond pulses from a pulsed 800 nm Ti-Sa laser has been calculated for different geometries of electrodes. Using electro-optical sampling techniques, the response of some photoswitches are currently being measured.