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Japanese Journal of Applied Physics

Predicted performance of kinetic-inductance traveling-wave parametric amplifiers using single-crystal NbTiN thin films at a millimeter wavelength

Hayato Kondo, Sho Masui, Takafumi Kojima, Hirotaka Terai, Masanori Takeda

Published Nov 17, 2025• 0 citations
Publisher

Abstract

Abstract This study predicts the performance of millimeter-wave kinetic-inductance traveling-wave parametric amplifiers (KITWPAs) designed using single-crystal NbTiN thin films that exhibit lower transmission losses. For comparison, polycrystalline NbTiN films, which are commonly been used for KITWPA fabrication, were also considered. Half-wavelength resonators were fabricated from both types of films, and their sheet inductances and resistances were measured. Using these values, KITWPAs with an amplification band of 35–50 GHz were designed, and their gain characteristics were analyzed. The results suggest that KITWPAs using single-crystal NbTiN films provide higher gain than those using polycrystalline NbTiN films.

DOI
10.35848/1347-4065/ae2052

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Quantum Technology: Driving Commercialisation of an Enabling Science•Oct 6, 2021•5 citations
Abstract This study predicts the performance of millimeter-wave kinetic-inductance traveling-wave parametric amplifiers (KITWPAs) designed using single-crystal NbTiN thin films that exhibit lower transmission losses. For comparison, polycrystalline NbTiN films, which are commonly been used for KITWPA fabrication, were also considered. Half-wavelength resonators were fabricated from both types of films, and their sheet inductances and resistances were measured. Using these values, KITWPAs with an amplification band of 35–50 GHz were designed, and their gain characteristics were analyzed. The results suggest that KITWPAs using single-crystal NbTiN films provide higher gain than those using polycrystalline NbTiN films.
Background Kinetic inductance travelling-wave parametric amplifiers (KITWPAs) have proven effective in achieving high gain over broad bandwidths whilst achieving near quantum-limited noise performance, properties which are extremely important for many ultra-sensitive experiments such as radio/millimetre/sub-millimetre astronomy, neutrino mass experiments, and axion dark matter searches, as well as commercial applications like quantum computational and communication systems. Methods This paper introduces the preliminary experimental exploration of an alternative KITWPA utilising thin titanium nitride (TiN) films as opposed to the conventionally used niobium titanium nitride (NbTiN) films. TiN films exhibit properties that could be advantageous for KITWPA operation, owing to its controllable critical temperature (T c) and physical robustness, hence KITWPAs fabricated from TiN films have the potential to replace NbTiN-based TWPAs for various applications, such as reducing the high pump power required to drive a NbTiN TWPA. Our TiN-based KITWPA devices were designed and fabricated with a 42 cm long coplanar waveguide transmission line patterned into a 100 nm thick TiN film, wound in a double spiral fashion to fit into a 2.2×2.2 cm chip. Results We successfully achieved broadband performance, with the best device displaying a peak averaged gain of ~5 dB with a bandwidth of ~3–13 GHz, making this one of the first broadband gain measurements of a TiN KITWPA reported in the literature. Despite this, the measured gain in all batches was lower than simulated due unexpected additional loss mechanisms. Conclusions The preliminary results presented here suggest that TiN films are suitable for KITWPA operation, although further investigation is required to improve the gain performance.
Abstract It is expected that the operation of microwave kinetic inductance travelling wave parametric amplifiers (KITWPAs) can be extended to the millimetre (mm) and the sub-mm wavelength range as long as the frequency is below the gap frequency of the superconducting film. This paper presents possible mm-wave designs for KITWPAs based on microstrip transmission lines. Our device is designed based on the BCS (Bardeen–Cooper–Schrieffer) model which successfully reproduces the measured transmission profile, gain, bandwidth, and nonlinear response of a fabricated KITWPA operating in the Ka-band, and includes the millimetre-wave dielectric loss determined by fitting the quality factor of a W-band microstrip resonator. We suggest a layout for a KITWPA operating near 220 GHz that can be fabricated using the same superconducting properties as the Ka-band device and can be coupled to a waveguide system. We conclude the paper by extending the 220 GHz design to higher frequency regimes approaching 1 THz.
Background: Kinetic Inductance Travelling Wave Parametric Amplifiers (KITWPAs) are a variant of superconducting amplifier that can potentially achieve high gain with quantum-limited noise performance over broad bandwidth, which is important for many ultra-sensitive experiments. In this paper, we present a novel modelling technique that can better capture the electromagnetic behaviour of a KITWPA without the translation symmetry assumption, allowing us to flexibly explore the use of more complex transmission line structures and better predict their performance. Methods: In order to design a KITWPA with optimal performance, we investigate the use of different superconducting thin film materials, and compare their pros and cons in forming a high-gain low-loss medium feasible for amplification. We establish that if the film thickness can be controlled precisely, the material used has less impact on the performance of the device, as long as it is topologically defect-free and operating within its superconducting regime. With this insight, we propose the use of Titanium Nitride (TiN) film for our KITWPA as its critical temperature can be easily altered to suit our applications. We further investigate the topological effect of different commonly used superconducting transmission line structures with the TiN film, including the effect of various non-conducting materials required to form the amplifier. Results: Both of these comprehensive studies led us to two configurations of the KITWPA: 1) A low-loss 100 nm thick TiN coplanar waveguide amplifier, and 2) A compact 50 nm TiN inverted microstrip amplifier. We utilise the novel modelling technique described in the first part of the paper to explore and investigate the optimal design and operational setup required to achieve high gain with the broadest bandwidth for both KITWPAs, including the effect of loss. Conclusions: Finally, we conclude the paper with the actual layout and the predicted gain-bandwidth product of our KITWPAs.
Background: Kinetic Inductance Travelling Wave Parametric Amplifiers (KITWPAs) are a new variant of superconducting amplifier that can potentially achieve high gain with quantum-limited noise performance over broad bandwidth, which is important for many ultra-sensitive experiments. In this paper, we present a novel modelling technique that can better capture the electromagnetic behaviour of a KITWPA without the translation symmetry assumption, allowing us to flexibly explore the use of more complex transmission line structures and better predict their performance. Methods: In order to design a KITWPA with optimal performance, we investigate the use of different superconducting thin film materials, and compare their pros and cons in forming a high-gain low-loss medium feasible for amplification. We establish that if the film thickness can be controlled precisely, the material used has less impact on the performance of the device, as long as it is topologically defect-free and operating within its superconducting regime. With this insight, we propose the use of Titanium Nitride (TiN) film for our KITWPA as its critical temperature can be easily altered to suit our applications. We further investigate the topological effect of different commonly used superconducting transmission line structures with the TiN film, including the effect of various non-conducting materials required to form the amplifier. Results: Both of these comprehensive studies led us to two configurations of the KITWPA: 1) A low-loss 100nm thick TiN coplanar waveguide amplifier, and 2) A compact 50nm TiN inverted microstrip amplifier. We utilise the novel modelling technique described in the first part of the paper to explore and investigate the optimal design and operational setup required to achieve high gain with the broadest bandwidth for both KITWPAs, including the effect of loss. Conclusions: Finally, we conclude the paper with the actual layout and the predicted gain-bandwidth product of our KITWPAs.
We have developed a kinetic inductance travelling-wave amplifier toward the THz-band operation. In this paper, we discuss the nonlinear kinetic inductance of single-crystal niobium titanium nitride (NbTiN) thin film in response to the application of current to the film. In our calculation, it is found that single-crystal NbTiN films have a large current variation in the kinetic inductance compared with that of polycrystalline NbTiN films. To evaluate the nonlinearity, we fabricated a superconducting coplanar waveguide with a 0.2-m line length and measured the transmittance. We observed a variation of the electrical length of the line caused by the modulation of the kinetic inductance as a function of the value of the current applied to the strip.
Travelling wave parametric amplifiers (TWPAs) made from highly nonlinear reactive superconducting thin films have been demonstrated to be a viable technology for various quantum applications, including fundamental physics experiments such as astronomy and axion dark matter searches, as well as commercial applications like quantum computational and communication systems. In this paper, we present the design of a kinetic inductance TWPA comprising a patterned titanium nitride film that can operate at 0.3K to demonstrate the feasibility of operation closer to 1K temperature, paving the way to achieve even higher bath temperature operation. We discuss in detail the design of our TWPA, along with the predicted gain-bandwidth product and other characteristics. We perform the preliminary experimental investigation of the thin film properties and compare that with the simulated results. We found that there are several discrepancies between the measured and the predicted behaviour of the thin film. We attribute these differences to the fact that the fabricated thin film has a different gap voltage, resistivity and thickness to what we expected. With a new set of estimated parameters, we successfully reproduce the measured transmission profile. We further show that by utilising bridges to ensure equipotential grounds for the CPW lines, we are able to reduce the rippling effect and achieve a higher gain with broader bandwidth. We expect that our TWPA can achieve higher than 20 dB gain from approximately 0–8 GHz.