Excitation-induced many-body effects play an important role in semiconductor quantum materials, where ultrafast processes determine the system properties. These effects occur when light excitations dynamically alter light absorption and emission, leading to nonlinear, excitation-induced changes in a semiconductor's optical response. This thesis theoretically investigates ultrafast excitation-induced effects in semiconductor nanostructures. Specifically, using a first-principles analysis based on quantum dynamic cluster expansion, we implement a systematic approach to describe the dynamics of microscopic polarizations and carrier occupations in semiconductor quantum materials precisely, with Coulomb-induced scattering fully included. We explore the dynamic buildup of excitation-induced effects, and develop a quantum memory model to precisely describe it. We also do a perturbative study on the third-order nonlinearities and propose a method based on it to measure the build-up time of excitation-induced effects via ultrafast experiments. Utilizing these theoretical tools, we successfully guided experiments to detect ultrafast processes. We successfully observed the time-delayed buildup of dephasing from the experiments and demonstrated a reversible ultrafast switching that can be switched within femtosecond time scale and is capable for hundreds of switching operations. We also identified nonperturbative ultrafast nonlinearities in the carbon nanotube, with the nonlinear refractive indices orders of magnitude higher than those found from other materials, explained by the strong excitation-induced effects. Our findings are crucial for quantum photonic applications. They offer significant insights into the fundamental quantum processes relevant to ultrafast photonics and open up new possibilities for quantum information and quantum optoelectronics technologies.
Excitation-induced many-body effects play an important role in semiconductor quantum materials, where ultrafast processes determine the system properties. These effects occur when light excitations dynamically alter light absorption and emission, leading to nonlinear, excitation-induced changes in a semiconductor's optical response. This thesis theoretically investigates ultrafast excitation-induced effects in semiconductor nanostructures. Specifically, using a first-principles analysis based on quantum dynamic cluster expansion, we implement a systematic approach to describe the dynamics of microscopic polarizations and carrier occupations in semiconductor quantum materials precisely, with Coulomb-induced scattering fully included. We explore the dynamic buildup of excitation-induced effects, and develop a quantum memory model to precisely describe it. We also do a perturbative study on the third-order nonlinearities and propose a method based on it to measure the build-up time of excitation-induced effects via ultrafast experiments. Utilizing these theoretical tools, we successfully guided experiments to detect ultrafast processes. We successfully observed the time-delayed buildup of dephasing from the experiments and demonstrated a reversible ultrafast switching that can be switched within femtosecond time scale and is capable for hundreds of switching operations. We also identified nonperturbative ultrafast nonlinearities in the carbon nanotube, with the nonlinear refractive indices orders of magnitude higher than those found from other materials, explained by the strong excitation-induced effects. Our findings are crucial for quantum photonic applications. They offer significant insights into the fundamental quantum processes relevant to ultrafast photonics and open up new possibilities for quantum information and quantum optoelectronics technologies.
This dissertation addresses both fundamental aspects of Coulomb correlations in semiconductor quantum wells and more practical aspects of theoretical analysis of semiconductor optoelectronic devices. After introducing the subject, we present and evaluate a state-of-the-art theory of the third order coherent optical response of a semiconductor quantum well based on the Dynamics Controlled Truncation (DCT) scheme. Already in the third order (the so-called chi (3)) regime, semiconductors exhibit a number of many-body Coulomb correlation effects. Their manifestation in various multi-pulse experimental configurations, customarily used in ultrafast semiconductor spectroscopy, has been an important component of this thesis. Coherent optical effects in a semiconductor 3-band system based on the heavy-hole, light-hole and conduction bands were investigated. The quantum beats in the time-integrated differential transmission signal were analyzed and compared with experimental data obtained at the University of Iowa. Fundamental differences from corresponding quantum beats in atomic 3-level systems were found. Also, the analysis of experimental data (obtained at the University of Arizona) of the coupled heavy-hole-light-hole optical Stark shift revealed evidence of intervalence band coherences, an analog of Raman coherences in atomic 3-levels systems. A scheme for realization of electromagnetically-induced transparency (EIT) based on the interference of excitonic and biexcitonic coherences was proposed. Corresponding experiments performed at the University of Oregon showed indeed a considerable coherent reduction of excitonic absorption. Furthermore, an extension of the chi(3) analysis revealed an energy renormalization of the biexciton, in good agreement with the corresponding experiment. A microscopic analysis of polarization dynamics in time-resolved four-wave mixing signals was performed, revealing interesting implications for the biexciton dephasing in addition to the significance of many-body correlations. In the case of four-wave mixing in semiconductor microcavities, our theoretical analysis in conjunction with experimental data obtained at the University of Tokyo gave us indications for a significant shortcoming of the second Born approximation (2nd BA) applied to two-exciton Coulomb correlations in a thin semiconductor quantum well, in agreement with the general knowledge of the qualitative failure of the 2nd BA in systems with short-range interaction in two dimensions. We also analyzed a novel all-optical switching technique based on the nonlinear polarization rotation. Apart from identifying the many-particle processes relevant for the switch operation in the chi(3) regime, we proposed ways to further optimize the switch.
Quantum spectroscopy utilizes the quantum fluctuations of the light source to characterize and control matter. More specifically, desired many-body states can be directly excited to the semiconductor by adjusting light source's quantum fluctuations. The method is experimentally realizable by projecting an extensive set of classical measurements into a quantum-optical response resulting from any possible quantum source. In this work, quantum spectroscopy is used to identify new classes of many-body states and quantum processes in semiconductor nanostructures. In the first part of this Thesis, the optical properties of semiconductor quantum wells are analyzed with quantum spectroscopy by projecting high-precision optical measurements into quantum-optical responses. It is shown that quantum spectroscopy can characterize the properties of specific stable electron-hole cluster – called quasiparticles – much more sensitively than traditional ultrafast laser spectroscopy. In particular, unambiguous evidence is demonstrated for the identification of a new highly correlated quasiparticle in direct-gap Galliumarsenide quantum wells, the dropleton, that is a quantum droplet consisting of four-to-seven electron-hole pairs. To determine the detectable excitation energetics of such correlated quasiparticles in optically excited semiconductor quantum wells, a new theoretical framework is presented which allows for the computation of the excitation spectrum based on a pair-correlation function formulation of the quasiparticle state. Another study in this Thesis deals with the emission properties of optically pumped quantum-dot microcavities. Experimental and theoretical evidence is shown for a new intriguing quantum-memory effect that is controllable by adjusting pump source's quantum fluctuations. The last part of this Thesis presents a fundamental study about the general applicability of quantum spectroscopy in dissipative systems.
Summary form only given. The ultrafast nonlinear optical response of semiconductor-microcavities (SMCs) in the nonperturbative regime is attracting growing interest for exploring fundamental light-matter interactions in many-particle quantum systems, as well as for the future implementations of ultrafast photonic devices. In spite of many investigations, the coherent dynamics of excitonic nonlinear-response in the nonperturbative regime has not been fully understood. Open questions are how strong exciton-cavity coupling affects exciton-exciton (X-X) interactions, and how in turn the X-X correlation influences the nonlinear response of SmCs. We investigate these open questions and show that the nonperturbative regime provides an unprecedented tool for investigating four-particle correlations.We start from the equations for the third order exciton polarization and cavity field describing quantum optical effects and coherent nonlinear optics in SMCs, perform the semiclassical factorization and include multiple scattering processes.
This dissertation presents investigations of fundamental optical nonlinearities in semi-conductor microstructures. Two distinct effects are studied. In the first part the excitonic optical Stark effect in InGaAs and GaAs multiple quantum-well structures is investigated by means of pump-probe spectroscopy. For nonresonant excitation below the excitonic transition the direction of the shift of the resonance depends on the polarization of the pump and probe pulses. In particular, for anti-circular polarization a surprising red-shift is observed. For resonant excitation, induced absorption energetically above and below the exciton transition and bleaching of the resonance is found. Experiments using both resonant and nonresonant excitation reveal the importance of bound and unbound two-exciton states in absorption changes of the 1s heavy-hole exciton resonance. It is found that higher-order Coulomb contributions determine the intensity as well as the time dependence of the differential excitonic absorption. In addition, the influence of light-hole excitons is analyzed. It is shown that the direction of the optical Stark shift for nonresonant excitation depends also sensitively on the heavy-hole to light-hole splitting and the detuning of the pump pulse. For very high pump intensities and nonresonant excitation the absorption is split when a circularly polarized pump and a linearly polarized probe beam are used. For co-circular excitation traces of hyper-Raman gain are observed. In the second part of this dissertation, the nonlinear optical response of semiconductor microcavities in the nonperturbative regime is studied in resonant single-beam transmission and pump-probe experiments. In both types of experiment, a pronounced third transmission peak lying spectrally between the two normal modes is observed. Its dependence on the probe intensity, pump intensity, pump-probe delay, exciton-cavity detuning and pump detuning is investigated. For single-beam transmission, the energy of the third peak parallels the position of the cavity resonance. It is more pronounced for circularly polarized excitation and lasts longer than the two normal modes. For pump-probe experiments, the third peak increases with decreasing probe intensity and increasing pump intensity. Its energy is close to the low-energy side of the pump spectrum and virtually unaffected by the cavity-exciton detuning. The appearance of the third peak requires temporal overlap of pump and probe pulses. The origin of this complex nonlinearity is the quantum nature of light, which induces intraband polarizations in the presence of a coherent driving field and a finite carrier density. It is found that the coupling of the intraband polarizations via guided modes to the polarization of the fundamental longitudinal mode is responsible for the third transmission peak. A fully quantized theory reproduces the experimental observations.
This dissertation addresses both fundamental aspects of the coherent exciton kinetics in single semiconductor quantum wells and more application-oriented aspects of the collective excitonic optical properties in quantum well Bragg structures. We use a bosonic theory to investigate the ultrafast coherent exciton dynamics after an optical excitation in a single semiconductor quantum well. It is shown that, on intermediate time scales, nonlinear mean-field interactions between excitons lead to a coherent, wave-like evolution in the momentum distribution of optically inactive excitons, which can survive for some time before dephasing sets in. Driven by two-exciton correlations, this coherent quantum kinetic effect bridges the well-known kinetics associated with optical excitation on the one hand and incoherent relaxation on the other. We also study more general dynamical properties of bosonic mean field systems with N-species of excitons (in a single semiconductor quantum well). We find that the momentum-conserving exciton mean field equations, including the coupling to external fields and fermionic corrections, have the dynamical structure su(N,N). We show that one can define a non-real generalized "Bloch vector" and a non-hermitian "density matrix" description, which allow us to explicitly obtain all the constants of motion associated with the su(N,N) symmetry. The many-body effects and correlations of excitons in a single quantum well are mainly induced by the Coulomb interactions. In the case of a semiconductor quantum well Bragg structure, the light induced coupling between different quantum wells also dramatically affects the excitons' behavior, especially through the collective excitations of excitons in the whole structure. We investigate the linear excitonic optical properties of the quantum well Bragg structure induced by the collective excitations using the transfer matrix approach. We show that the so called "intermediate band" (IB) created by the exciton resonance, which does not exist in conventional photonic crystals, can be used for the stopping, storing and releasing of light, which is important in information processing devices. We also discuss the compensation of the dispersive distortion in the light delay process through reversing the IB band structure. Other conceptual and practical issues such as the decay rate of the IB modes and the generalized anti-reflection coating are also investigated.
Excitons, the bound states of an electron and a hole, in semiconductors are interesting
objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four
decades, many interesting phenomena related to the dynamics and the nonlinear optical
properties of excitons in semiconductors and their nanostructures in the coherent and
incoherent regimes are still to be explored. This thesis presents our effort to study the
nonlinear optical properties as well as the exciton dynamics in coherent and incoherent
regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs
quantum dots (QDs).
We have set up several time-resolved and steady-state optical spectroscopic measurement
techniques in our laboratory to carry out our study on excitons dynamics in
semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely,
the lock-in detection, spectral selection by the monochromator and time-integration at
the slow photodetector. We have used the formalism of optical Bloch equations conventionally
used to analyse wave mixing experiments. Our analysis puts the pump-probe
technique on the same footing as the wave mixing experiments. We show that pumpprobe
experiments can be used to study both coherent and incoherent dynamics. We
also present a clear physical picture of the measured signal using the Lorentz harmonic
oscillator model.
We report the investigation of the coherent exciton dephasing dynamics using pumpprobe
reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs
QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of
the dephasing rate of the excitons with increasing exciton density due to exciton-exciton
scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density
and at low lattice temperature is larger than the corresponding dephasing rate of the
17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report
that the dephasing rates for both QWs are linear with the sample temperature below the
30 K.
We report the study of ionization equilibrium between the exciton and the electronhole
plasma population in the temperature and pressure (excitation density) phase space.
Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole
plasma. We investigate this ionization equilibrium using steady state photoluminescence
and time-resolved excitation correlation PL measurements. We present a
clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its
connection with the Mott transition is discussed.
Semiconductor nanocrystals and QDs are another important area of research, mainly
due to their huge potential for device application. We present a simple
model which combines carrier loss kinetics, detailed balance principle in thermodynamic
equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour
of the experimental data.