This work reports a theoretical framework that combines the auxiliary coherent potential approximation (ACPA-DMFT) with dynamical mean-field theory to study strongly correlated and disordered electronic systems with both diagonal and off-diagonal disorders. In this method, by introducing an auxiliary coupling space with extended local degree of freedom,the diagonal and off-diagonal disorders are treated in a unified and self-consistent framework of coherent potential approximation, within which the dynamical mean-field theory is naturally combined to handle the strongly correlated Anderson-Hubbard model. By using this approach, we compute matsubara Green's functions for a simple cubic lattice at finite temperatures and derive impurity spectral functions through the maximum entropy method. Our results reveal the critical influence of off-diagonal disorder on Mott-type metal-insulator transitions. Specifically, a reentrant phenomenon is identified, where the system transitions between insulating and metallic states under varying interaction strengths. The ACPA-DMFT method provides an efficient and robust computational method for exploring the intricate interplay of disorder and strong correlations.
We study the Anderson-Hubbard model to examine the interplay between the disordered potential and the Hubbard interactions. We use the dynamical mean-field theory (DMFT) with an exact diagonalization as an impurity solver to effectively deal with the quantum fluctuations due to the local interactions. In order to characterize the paramagnetic metal-insulator transition in disordered systems, we compute the typical local density of states, as well as the arithmetically-averaged local density of states. Our approach is found to reproduce the characteristic features of the metal-insulator transition in infinite dimensions, such as the existence of the disorder-driven metallic phase for moderate values of disorder strength and interactions, as observed in earlier studies. In two dimensions, the system turns out to exhibit more insulating behavior when we increase the cluster size in the cellular DMFT. The metallic phase, which is induced from weak Mott insulators by the introduction of a disordered potential, is not observed in two dimensions.
To explore correlated electrons in the presence of local and nonlocal disorder, the Blackman-Esterling-Berk method for averaging over off-diagonal disorder is implemented into dynamical mean-field theory using tensor notation. The impurity model combining disorder and correlations is solved using the recently developed fork tensor-product state solver, which allows one to calculate the single particle spectral functions on the real-frequency axis. In the absence of off-diagonal hopping, we establish exact bounds of the spectral function of the noninteracting Bethe lattice with coordination number
Z. In the presence of interaction, the Mott insulating paramagnetic phase of the one-band Hubbard model is computed at zero temperature in alloys with site- and off-diagonal disorder. When the Hubbard
U parameter is increased, transitions from an alloy band insulator through a correlated metal into a Mott insulating phase are found to take place.