Charge-state conversion has been a very useful tool for improving the performance of nitrogen-vacancy (NV) centers in diamond in many application scenarios. Lasers of different colors are employed to manipulate the NV charge, ranging from blue to infrared. Here, we focus on the study of the charge-state dynamics under illumination of multicolors and their combination with infrared (IR) light, and the results are directly presented in terms of charge-state population. It is shown that each color of light serves some kind of superiority over others in charge-state conversion and a greatly improved conversion rate can be induced by the additional IR illumination. We report that the steady-state ${\mathrm{NV}}^{\ensuremath{-}}$ population is increased up to 82% by IR light, and it presents basically the same response trend to infrared power as that of fluorescence counts. We also report a fast-oscillating fluorescence time trace by modulating the IR power. We believe that our work offers some straightforward results that might be of interest to researchers and lead to a clearer understanding of the NV charge-state dynamics.
The nitrogen-vacancy (NV) centre in diamond is a leading platform for room-temperature quantum sensing. Improvements in sensitivity require precise control of the NV charge state. Transitions from the neutral NV
0 charge state to the negative NV
− charge state can occur during excitation with photon energies below the ZPL transition of NV
0. These sub-resonant charge transitions limit modern initialisation protocols and have not been studied in full detail. In this paper we show that sub-resonant charge cycling arises from phonon-assisted anti-Stokes excitation. We further uncover the phonon states which contribute most strongly to the anti-Stokes transition via the development of novel quantitative models. The models indicate that low energy acoustic phonons strongly contribute to the transition close to the ZPL. At longer wavelengths a 43\,meV mode additionally impacts the charge cycling dynamics.
The control and stabilisation of the charge state of nitrogen‐vacancy centres in diamond is an important issue for the achievement of reliable processing of spin‐based quantum information. The effect of phosphorous and boron doping of diamond on the charge state of nitrogen‐vacancy (NV) centres is shown here. Ensembles of NV centres are produced at a depth of 60 nm in ultrapure diamond by implantation of nitrogen ions. Overlapping with the NV ensembles, donor and acceptor doped regions of different doping levels are prepared by ion implantation of phosphorus and boron followed by annealing in vacuum at 1500 °C. We show how the charge state of NV centres is controlled by the presence of phosphorous or boron atoms in their neighbourhood. For the lowest doping level, spectral measurements on the ensemble of NV centres reveal a higher amount of NV0 in the case of boron and a higher amount of NV− in the case of phosphorus, as compared with undoped regions. This behaviour is strengthened when the doping level is increased. Interestingly, the charge state control of native silicon‐vacancy centres is also evidenced. Finally, we discuss the role of the surface termination of diamond on the average charge state of the NV ensemble (still dominant even at a depth of 60 nm) and confirm that the surface 2D‐hole‐gas (H‐termination) can be compensated by nitrogen itself.