Evaluation of the charge transport property of organic semiconductors requires exact quantum dynamics simulation of large systems. We present a numerically nearly exact approach to investigate carrier transport dynamics in organic semiconductors by extending the non-Markovian stochastic Schrödinger equation with complex frequency modes to a forward-backward scheme and by solving it using the matrix product state (MPS) approach. By utilizing the forward-backward formalism for noise generation, the bath correlation function can be effectively treated as a temperature-independent imaginary part, enabling a more accurate decomposition with fewer complex frequency modes. Using this approach, we study the carrier transport and mobility in the one-dimensional Peierls model, where the nonlocal electron-phonon interaction is taken into account. The reliability of this approach was validated by comparing carrier diffusion motion with those obtained from the hierarchical equations of motion method across various parameter regimes of the phonon bath. The efficiency was demonstrated by the modest virtual bond dimensions of MPS and the low scaling of the computational time with the system size.
Studying charge transport in models with nonlocal carrier-phonon interaction is difficult because it requires finite-temperature real-time correlation functions of mixed carrier-phonon operators. Focusing on models with discrete undamped phonon modes, we show that such correlation functions can be retrieved from the hierarchical equations of motion (HEOM), although phonons have been integrated out. Our procedure relies on the explicit expression of HEOM auxiliaries in terms of phonon creation and annihilation operators. It reveals that the auxiliaries describe multiphonon-assisted carrier transitions induced by genuine many-phonon correlations, from which lower-order correlations are subtracted according to the finite-temperature Wick's theorem. Applying the procedure to our recently developed momentum-space HEOM method featuring a specific hierarchy closing, we compute the numerically exact dynamical mobility of a carrier within the one-dimensional Peierls model. The carrier mobility at moderate temperatures decreases with increasing interaction, whereas high temperatures see the opposite trend, reflecting the prevalence of the phonon-assisted current over the purely electronic band current. The pronounced finite-size effects and HEOM instabilities delimit the range of applicability of our approach to moderate interactions, moderate to high temperatures, and not too fast phonons. Importantly, this range comprises the values relevant for charge transport in crystalline organic semiconductors, and we present and discuss the corresponding numerically exact results in a companion paper (arXiv:2501.05055).
The role of nonlocal electron-phonon couplings (EPC) in organic semiconductors has the been center of interest recently. Several irreconcilable scenarios coexist for the description of the nonlocal EPC, such as phonon-assisted (PA) transport, transient localization (TL), and band-like (BL) transport. In this Letter, we present a nearly exact numerical study for the carrier mobility of the one-dimensional Holstein-Peierls model using finite temperature time-dependent matrix product states approach. We are able to locate the PA, TL and BL regimes as a function of the electronic coupling (
V) and the nonlocal EPC (
ΔV). The distinct transport behaviors with respect to EPC are analyzed by carrier mobility, mean free path, optical conductivity and one-particle spectral function. We have also identified an intermediate where none of the established pictures applies, and the generally perceived hopping regime is found to be at a very limited end in the proposed general paradigm.