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The Journal of Chemical Physics

A stochastic Schrödinger equation and matrix product state approach to carrier transport in organic semiconductors with nonlocal electron–phonon interaction

Liqi Zhou, Xing Bao Gao, Zhigang Shuai

Published Aug 28, 2024• 12 citations
Publisher

Abstract

Evaluation of the charge transport property of organic semiconductors requires exact quantum dynamics simulation of large systems. We present a numerically nearly exact approach to investigate carrier transport dynamics in organic semiconductors by extending the non-Markovian stochastic Schrödinger equation with complex frequency modes to a forward-backward scheme and by solving it using the matrix product state (MPS) approach. By utilizing the forward-backward formalism for noise generation, the bath correlation function can be effectively treated as a temperature-independent imaginary part, enabling a more accurate decomposition with fewer complex frequency modes. Using this approach, we study the carrier transport and mobility in the one-dimensional Peierls model, where the nonlocal electron-phonon interaction is taken into account. The reliability of this approach was validated by comparing carrier diffusion motion with those obtained from the hierarchical equations of motion method across various parameter regimes of the phonon bath. The efficiency was demonstrated by the modest virtual bond dimensions of MPS and the low scaling of the computational time with the system size.

DOI
10.1063/5.0221143

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Evaluation of the charge transport property of organic semiconductors requires exact quantum dynamics simulation of large systems. We present a numerically nearly exact approach to investigate carrier transport dynamics in organic semiconductors by extending the non-Markovian stochastic Schrödinger equation with complex frequency modes to a forward-backward scheme and by solving it using the matrix product state (MPS) approach. By utilizing the forward-backward formalism for noise generation, the bath correlation function can be effectively treated as a temperature-independent imaginary part, enabling a more accurate decomposition with fewer complex frequency modes. Using this approach, we study the carrier transport and mobility in the one-dimensional Peierls model, where the nonlocal electron-phonon interaction is taken into account. The reliability of this approach was validated by comparing carrier diffusion motion with those obtained from the hierarchical equations of motion method across various parameter regimes of the phonon bath. The efficiency was demonstrated by the modest virtual bond dimensions of MPS and the low scaling of the computational time with the system size.
We present a comprehensive theoretical study of charge transport in organic materials on the basis of the one-dimensional dispersive Holstein-Peierls model. The hierarchical equations of motion in tensor-train format (HEOM-TT) method is employed to accurately describe both local Holstein-type and nonlocal Peierls-type electron-phonon couplings in the presence of low-frequency dispersive phonons. Linear response formulation of carrier mobility is obtained by employing the generating functional method. We demonstrate the capability of the method by calculating current correlation functions, diffusivities, and mobilities for various transport regimes. Our results provide new insights into the mechanisms underlying charge transport in organic semiconductors and establish HEOM-TT as a powerful tool for studying complex vibronic quantum dynamics and transport properties in condensed matter systems.
The role of nonlocal electron-phonon couplings (EPC) in organic semiconductors has the been center of interest recently. Several irreconcilable scenarios coexist for the description of the nonlocal EPC, such as phonon-assisted (PA) transport, transient localization (TL), and band-like (BL) transport. In this Letter, we present a nearly exact numerical study for the carrier mobility of the one-dimensional Holstein-Peierls model using finite temperature time-dependent matrix product states approach. We are able to locate the PA, TL and BL regimes as a function of the electronic coupling (VVV) and the nonlocal EPC (ΔV\Delta VΔV). The distinct transport behaviors with respect to EPC are analyzed by carrier mobility, mean free path, optical conductivity and one-particle spectral function. We have also identified an intermediate where none of the established pictures applies, and the generally perceived hopping regime is found to be at a very limited end in the proposed general paradigm.
Studying charge transport in models with nonlocal carrier-phonon interaction is difficult because it requires finite-temperature real-time correlation functions of mixed carrier-phonon operators. Focusing on models with discrete undamped phonon modes, we show that such correlation functions can be retrieved from the hierarchical equations of motion (HEOM), although phonons have been integrated out. Our procedure relies on the explicit expression of HEOM auxiliaries in terms of phonon creation and annihilation operators. It reveals that the auxiliaries describe multiphonon-assisted carrier transitions induced by genuine many-phonon correlations, from which lower-order correlations are subtracted according to the finite-temperature Wick's theorem. Applying the procedure to our recently developed momentum-space HEOM method featuring a specific hierarchy closing, we compute the numerically exact dynamical mobility of a carrier within the one-dimensional Peierls model. The carrier mobility at moderate temperatures decreases with increasing interaction, whereas high temperatures see the opposite trend, reflecting the prevalence of the phonon-assisted current over the purely electronic band current. The pronounced finite-size effects and HEOM instabilities delimit the range of applicability of our approach to moderate interactions, moderate to high temperatures, and not too fast phonons. Importantly, this range comprises the values relevant for charge transport in crystalline organic semiconductors, and we present and discuss the corresponding numerically exact results in a companion paper (arXiv:2501.05055).
We present a Hierarchical Equations of Motion (HEOM) approach in the Matrix Product State (MPS) formalism to simulate carrier transport in molecular aggregates described by an electron-phonon Hamiltonian with bosonic dissipation. Transport properties are evaluated through time-dependent population analysis and mobility calculations. The method's validity is rigorously established through benchmarking against conventional HEOM. Comparative analysis with Thermo-Field Dynamics combined with MPS (TFD + MPS) reveals fundamental similarities and differences in their effective Hamiltonians and demonstrates the superior accuracy and computational efficiency of our HEOM + MPS framework. For single-electron systems, we introduce state-vector space configurations that enhance performance beyond traditional Fock space approaches. Results confirm that our method provides a robust, nearly exact, and efficient numerical quantum dynamic approach for carrier transport in dissipative bosonic environments.
A new diagrammatic quantum Monte Carlo approach is proposed to deal with the imaginary time propagator involving both dynamic disorder (i.e., electron-phonon interactions) and static disorder of local or nonlocal nature in a unified and numerically exact way. The establishment of the whole framework relies on a general reciprocal-space expression and a generalized Wick's theorem for the static disorder. Since the numerical cost is independent of the system size, various physical quantities, such as the thermally averaged coherence, Matsubara one-particle Green's function, and current autocorrelation function, can be efficiently evaluated in the thermodynamic limit (infinite in the system size). The validity and performance of the proposed approach are systematically examined in a broad parameter regime. This approach, combined with proper numerical analytic continuation methods and first-principles calculations, is expected to be a versatile tool toward the calculation of various transport properties, such as mobilities in realistic semiconductors involving multiple electronic energy bands, high-frequency optical and low-frequency acoustic phonons, different forms of dynamic and static disorders, and anisotropy.
The Peierls-Boltzmann transport equation (PBE), which governs non-equilibrium phonon transport, suffers from the curse of dimensionality due to its high-dimensional phase space including both real and modal spaces. We explore the use of matrix product states (MPS) for numerical simulation of the PBE. We show that an MPS configuration based on scattering events combined with a dimensionless form of the solution can drastically increase the locality of correlations between tensors in the MPS representation, enhancing its effectiveness in dimension reduction. We further examine the effects of index ordering in an MPS and find that the highest locality is achieved when tensor chains associated with both real and modal spaces are connected from the coarsest grid to each other in the center of the MPS. Using this optimal configuration and a solver inspired by the density matrix renormalization group, we solve the PBE discretized by a finite volume method (FVM). The solution is obtained for crystalline silicon across ballistic, quasi-ballistic, and diffusive transport regimes. An MPS truncated to the compression ratio of 10−310^{-3}10−3 suffices to reproduce reference solutions with high fidelity. The computational cost scales sublinearly with the number of grid points in both real and modal spaces, achieving roughly an order of magnitude reduction in computational time compared to the FVM with sparse matrix operation.