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APL Materials

Gate-controlled superconductivity and quantum interference in 300 mm CMOS-compatible ZrN nanostructures

Roman Potjan, Oliver Ostien, Marcus Wislicenus, Raik Hoffmann, Katharina Lilienthal, Kilian Heidner, Felix Mende, Sergej Liberda, André Reck, Varvara Brackmann, Benjamin Uhlig, J. Wosnitza

Published May 1, 2025• 4 citations
Publisher

Abstract

The interplay of alternative materials, large-scale integration technologies, and innovative devices plays a pivotal role on the way to fault-tolerant quantum computing. In this context, gate-controlled superconductivity (GCS) emerges as a key enabling technology, promising to advance superconducting logic and quantum electronics, complementing conventional approaches based on Josephson effects and quantum interference. Here, we demonstrate all-metallic superconducting ZrN nanostructures on silicon, fabricated entirely using a subtractive, monolithic dry-etch approach with a 300 mm CMOS-compatible process flow. For Dayem-bridge weak links with decreasing width down to 27 nm, we observe Tc of 7.3 K, width-dependent switching characteristics, and a progressive approach of the tunneling limit. In laterally gated Dayem-bridge and nanowire devices, we observe GCS with full suppression of the critical current, where required gate voltages <5 V promise compatibility with CMOS interfaces. Asymmetries in polarity-dependent power injection via field emission support GCS models that attribute the effect to quasiparticle relaxation through phonon emission. Additional asymmetries in the GCS effect suggest an influence of the substrate condition after dry etching. Field emission features in the gated nanowire device imply superimposed current paths along the gate edge and corners. Finally, we analyze magnetic interference in Dayem-bridge weak links and superconducting quantum interference devices, where quantum interference is governed by Josephson effects and inductance loop asymmetries. Our results contribute to the scaling efforts in hybrid superconducting electronics and quantum-processing units.

DOI
10.1063/5.0247193

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The interplay of alternative materials, large-scale integration technologies, and innovative devices plays a pivotal role on the way to fault-tolerant quantum computing. In this context, gate-controlled superconductivity (GCS) emerges as a key enabling technology, promising to advance superconducting logic and quantum electronics, complementing conventional approaches based on Josephson effects and quantum interference. Here, we demonstrate all-metallic superconducting ZrN nanostructures on silicon, fabricated entirely using a subtractive, monolithic dry-etch approach with a 300 mm CMOS-compatible process flow. For Dayem-bridge weak links with decreasing width down to 27 nm, we observe Tc of 7.3 K, width-dependent switching characteristics, and a progressive approach of the tunneling limit. In laterally gated Dayem-bridge and nanowire devices, we observe GCS with full suppression of the critical current, where required gate voltages <5 V promise compatibility with CMOS interfaces. Asymmetries in polarity-dependent power injection via field emission support GCS models that attribute the effect to quasiparticle relaxation through phonon emission. Additional asymmetries in the GCS effect suggest an influence of the substrate condition after dry etching. Field emission features in the gated nanowire device imply superimposed current paths along the gate edge and corners. Finally, we analyze magnetic interference in Dayem-bridge weak links and superconducting quantum interference devices, where quantum interference is governed by Josephson effects and inductance loop asymmetries. Our results contribute to the scaling efforts in hybrid superconducting electronics and quantum-processing units.
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Abstract Superconductor nanodevices serve significant platforms for solid-state quantum systems, such as quantum computer and quantum detector. And the out-of-equilibrium phenomena always plays an important role in superconductor nanodevices. Here we reported an incoherent superconducting nanowire phonon detector for revealing the out-of-equilibrium phenomena in the controversial gate-controlled superconductivity (GCS), which recently provide a new perspective on the design of superconducting devices. The asymmetric dependence of the gate-inducing signal count rate (CR) on the gate voltage polarity not only suggests that GCS is dominated by the hybrid effect of field-emission electrons and the out-of-equilibrium phonons, but also verifies the capability of the detector to respond to phonons. These conclusions are further proven by applying opposite gate voltages on two remote gates, in which only phonons play a role and the asymmetry vanishes. We show the significance of nanowire sensitivity and band structure to GCS, which can be used to modulate the polarity symmetry of CR on gate voltage. Proposed detector contributes to the research on the out-of-equilibrium phenomena and has potential in constructing phonon-based solid quantum devices.
It was recently discovered that supercurrents flowing through thin superconducting nanowires can be quenched by a gate voltage. This gate control of supercurrents, known as the GCS effect, could enable superconducting transistor logic. Here, we report that the GCS also manifests in a suppression of Meissner screening, establishing the phenomenon as a genuine feature of superconductivity that is not restricted to transport. Using a scanning nitrogen-vacancy magnetometer at sub-Kelvin temperatures, we image the nanoscale spatial region of GCS suppression in micron-size niobium islands. Our observations are compatible with a microscopic hot-spot model of quasiparticle generation and diffusion, and in conflict with other candidate mechanisms such as Joule heating or an electric field effect. Our work introduces an alternative means for studying quasiparticle dynamics in superconducting nanostructures, and showcases the power of local imaging techniques for understanding emergent condensed matter phenomena.
It was recently discovered that supercurrents flowing through thin superconducting nanowires can be quenched by applying a gate voltage to a nearby gate electrode. This gate control of supercurrents, known as the GCS effect, could enable superconducting transistor logic. Here, we report that the GCS also manifests in a suppression of Meissner screening, establishing the phenomenon as a genuine feature of superconductivity that is not restricted to transport. Using a scanning nitrogen-vacancy (NV) magnetometer at sub-Kelvin temperatures, we image the nanoscale spatial region of GCS suppression in micron-size niobium islands. Our observations are compatible with a microscopic hot-spot model of quasiparticle generation and diffusion, and in conflict with other candidate mechanisms such as Joule heating or an electric field effect. Our work introduces an alternative means for studying quasiparticle dynamics in superconducting nanostructures, and showcases the power of local imaging techniques for understanding emergent condensed matter phenomena.
The rising interest in increased manufacturing maturity of quantum processing units is pushing the development of alternative superconducting materials for semiconductor fab process technology. However, these are often facing CMOS process incompatibility. In contrast to common CMOS materials, such as Al, TiN, and TaN, reports on the superconductivity of other suitable transition-metal nitrides are scarce, despite potential superiority. Here, we demonstrate fully CMOS-compatible fabrication of HfN and ZrN thin films on state-of-the-art 300 mm semiconductor process equipment, utilizing reactive DC magnetron sputtering on silicon wafers. Measurement of mechanical stress and surface roughness of the thin films demonstrates process compatibility. We investigated the materials phase and stoichiometry by structural analysis. The HfN and ZrN samples exhibit superconducting phase transitions with critical temperatures up to 5.84 and 7.32 K, critical fields of 1.73 and 6.40 T, and coherence lengths of 14 and 7 nm, respectively. A decrease in the critical temperature with decreasing film thickness indicates mesoscopic behavior due to geometric and grain-size limitations. The results promise a scalable application of HfN and ZrN in quantum computing and related fields.
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric-field-induced control of charge-carrier concentration to modulate the channel superconducting properties. Despite the fact that the field-effect is believed to be ineffective for superconducting metals, recent experiments showed electric-field-dependent modulation of the critical current ( I C ) in a fully metallic transistor. However, the grounding mechanism of this phenomenon is not completely understood. Here, we show the experimental realization of Ti-based Dayem bridge field-effect transistors (DB–FETs) able to control the I C of the superconducting channel. Our easy fabrication process for DB–FETs show symmetric full suppression of I C for applied critical gate voltages as low as V G C ≃ ±8 V at temperatures reaching about the 85% of the record critical temperature, T C ≃ 550 mK, for titanium. The gate-independent T C and normal-state resistance ( R N ) coupled with the increase of resistance in the superconducting state ( R S ) for gate voltages close to the critical value ( V G C ) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (| g m MAX | ≃ 15 μA/V at V G ≃ ±6.5 V) and variations of Josephson kinetic inductance ( L K ) with V G of 2 orders of magnitude. Therefore, the DB–FET appears as an ideal candidate for the realization of superconducting electronics, superconducting qubits, and tunable interferometers as well as photon detectors.