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Photonics Research

Enhancing the sensitivity of nitrogen-vacancy color-center ensemble sensors using one-dimensional photonic crystals

Yunpeng Yang, Sen Zhang, Kang Liu, Saifei Fan, Benjian Liu, Bing Dai, Jiaqi Zhu

Published Apr 3, 2025• 4 citations
Publisher

Abstract

The nitrogen-vacancy (NV) color center in diamond is a promising solid-state quantum system at room temperature. However, its sensitivity is limited by its low fluorescence collection efficiency, and its coherence time is limited by spin interference of impurity electrons around the NV color center. Here, we innovatively fabricated a one-dimensional photonic crystal on the surface of diamond, which greatly improved the fluorescence intensity of the NV color centers and increased the sensitivity of NV ensembles by a factor of 2.92. In addition, the laser reflected by the photonic crystal excites impurity electrons around the NV color centers, improving the electric field environment around the NV color centers, which exponentially prolongs the dephasing time (from 209 to 841 ns), opening avenues for NV color-center ensemble sensors.

DOI
10.1364/prj.558148

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The nitrogen-vacancy (NV) color center in diamond is a promising solid-state quantum system at room temperature. However, its sensitivity is limited by its low fluorescence collection efficiency, and its coherence time is limited by spin interference of impurity electrons around the NV color center. Here, we innovatively fabricated a one-dimensional photonic crystal on the surface of diamond, which greatly improved the fluorescence intensity of the NV color centers and increased the sensitivity of NV ensembles by a factor of 2.92. In addition, the laser reflected by the photonic crystal excites impurity electrons around the NV color centers, improving the electric field environment around the NV color centers, which exponentially prolongs the dephasing time (from 209 to 841 ns), opening avenues for NV color-center ensemble sensors.
Individual, luminescent point defects in solids, so-called color centers, are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual nitrogen vacancy (NV) centers in diamond. We discuss two central challenges of the field: first, the creation of highly-coherent, shallow NV centers less than 10 nm below the surface of a single-crystal diamond; second, the fabrication of tip-like photonic nanostructures that enable efficient fluorescence collection and can be used for scanning probe imaging based on color centers with nanoscale resolution.
We present a design to increase the amount of collected fluorescence emitted by nitrogen-vacancy color centers in diamond used for quantum-sensing. An improvement was measured in collected fluorescence when comparing oppositely faced emitting surfaces by a factor of 3.8(1). This matches ray-tracing simulation results. This design therefore improves on the shot noise limited sensitivity in optical readout-based measurements of, for instance, magnetic and electric fields, pressure, temperature, and rotations.
Abstract The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV T 1 relaxometry measurements.
Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.
Ensembles of nitrogen-vacancy (N-VVV) centers in diamond show promise as versatile electric field sensors, but are limited by noise from an inhomogeneous internal charge environment. Here researchers develop a scheme for optically enhanced electrometry that improves N-VVV sensitivity to external electric fields, especially at low temperatures. They also implement a complementary method for experimentally extracting the color center's excited-state electric field susceptibilities, and they provide a simple scaling theory for optimizing the density of N-VVV defects in electrometry applications.
Point defects in diamond, particularly nitrogen-vacancy (NV) centers, have emerged as powerful tools for a broad range of quantum technologies. These defects are promising candidates for quantum information science, serving as deterministic single-photon sources and solid-state quantum memories. They have also been employed as nanoscale quantum sensors to detect various physical quantities, including magnetic fields, electric fields, and temperature, owing to their long spin coherence time at room temperature. Development of these diamond-based quantum technologies has been rapidly boosted by a recent quantum leap in nanofabrication technologies for high-quality single-crystal diamond. Incorporating these color centers into diamond nanostructures with mature integrated photonics provides a promising route to build scalable and practical systems for quantum applications. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms. Nitrogen-vacancy centers in diamond have emerged as powerful tools for a broad range of quantum technologies. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms.