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Photonics

Super Broad Non-Hermitian Line Shape from Out-of-Phase and In-Phase Photon-Phonon Dressing in Eu3+: NaYF4 and Eu3+: BiPO4

Muhammad Kashif Majeed, Muhammad Usman, Iqbal Hussain, Usman Javed, Qasim Khan, Faisal Nadeem, Faisal Munir, Huanrong Fan, Yin Cai, Yanpeng Zhang

Published Dec 12, 2024• 0 citations
Publisher

Abstract

We report super broad non-Hermitian line shape from out-of-phase and in-phase photon-phonon dressing (quantization) in Eu3+: NaYF4 and Eu3+: BiPO4 nanocrystals. The line shape is controlled by changing time gate position, time gate width, power, temperature, sample, photomultiplier tubes, and laser. We observed that the fluorescence (FL) line-shape contrasts are 69.23% for Eu3+: BiPO4 and 43.75% for Eu3+: NaYF4, owing to the stronger out-of-phase photon-phonon dressing (destructive quantization). Moreover, we observed that the spontaneous four-wave mixing (SFWM) line shape was approximately three times wider at 300 K than at 77 K for the [(12:1)-phase] Eu3+: NaYF4 due to more high-frequency in-phase phonon dressing (strong constructive quantization). Furthermore, we showed that the noise line-shape width remains unchanged for Eu3+: BiPO4 (16 nm) and Eu3+: NaYF4 (12 nm) due to out-of-phase and in-phase photon-phonon dressing balance. Such results have potential applications in multi-channel band stop filter.

DOI
10.3390/photonics11121169

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We report super broad non-Hermitian line shape from out-of-phase and in-phase photon-phonon dressing (quantization) in Eu3+: NaYF4 and Eu3+: BiPO4 nanocrystals. The line shape is controlled by changing time gate position, time gate width, power, temperature, sample, photomultiplier tubes, and laser. We observed that the fluorescence (FL) line-shape contrasts are 69.23% for Eu3+: BiPO4 and 43.75% for Eu3+: NaYF4, owing to the stronger out-of-phase photon-phonon dressing (destructive quantization). Moreover, we observed that the spontaneous four-wave mixing (SFWM) line shape was approximately three times wider at 300 K than at 77 K for the [(12:1)-phase] Eu3+: NaYF4 due to more high-frequency in-phase phonon dressing (strong constructive quantization). Furthermore, we showed that the noise line-shape width remains unchanged for Eu3+: BiPO4 (16 nm) and Eu3+: NaYF4 (12 nm) due to out-of-phase and in-phase photon-phonon dressing balance. Such results have potential applications in multi-channel band stop filter.
We investigated the photon and phonon alignment for two dressing interaction profile in Eu+3: NaYF4. The evolution from strong to weak interaction alignment can be controlled by time gate width and time gate position, which shows that time gate position seems more sensitive than time gate width, while changing both can make interaction alignment oscillation due to two phonon and one photon quantization. Fluorescence FL signal switch from dip to peak interaction profile due to strong gamma, while the Super-Fluorescence SFWM signal switch from peak to dip interaction profile due to strong Rabi frequency (G). Comparing single laser spectral alignment to two-laser interaction alignment, the FL and SFWM shows dressing peak dip switch (spectral to interaction profile). In contrast, there is no switch in AT (spectral to interaction profile) because, the phase difference of the second laser balances the destructive and constructive dressing quantization’s. Such results can have potential applications in fine and hyper structure interaction alignment in non-polar ion.
We report atomic-like Autler–Townes splitting controlled by destructive and constructive natural non-Hermitian quantization in Eu3+: BiPO4. For the first time, we explored destructive and constructive AT splitting in different regions. Fluorescence (FL), spontaneous four-wave mixing (SFWM), and shot noise signals exhibit different kinds of AT splitting. FL signal exhibits three level dip AT splitting through destructive quantization, SFWM signals exhibit peak and multi-dip AT splitting through constructive quantization, and shot noise signals exhibit a two-level dip AT splitting. These kinds of AT splitting originate through single photon dressing and double photon–phonon dressing, which can be controlled by adjusting experimental parameters. Our atomic-like Autler–Townes-splitting technique is useful for making a spectral router.
crystal. Such atomic coherence spectral interaction evolves from out-of-phase fluorescence to in-phase spontaneous four-wave mixing (SFWM) by changing the time gate. The dressing dip switch and three dressing dips of SFWM result from the strong photon-phonon destructive cross- and self-interaction for the hexagonal phase, respectively. More phonon dressing results in the destructive interaction, while less phonon dressing results in the constructive interaction of the atomic coherences. The experimental measurements of the photon-phonon interaction agree with the theoretical simulations. Based on our results, we proposed a model for an optical transistor (as an amplifier and switch).
In this paper, we explore the asymmetry observed between the effects of photon–phonon coupling (nested-dressing) and a crystal field (CF) on the fine structure of fluorescence (FL) and spontaneous four-wave mixing (SFWM) in Eu3+: BiPO4 and Eu3+: NaYF4. The competition between the CF and the strong photon–phonon dressing leads to dynamic splitting in two directions. The CF leads to static splitting in one direction under weak phonon dressing. The evolution from strong dressing to weak dressing results in spectral asymmetry. This spectral asymmetry includes out-of-phase FL and in-phase SFWM. Further, the large ratio between the dressing Rabi frequency and the de-phase rate leads to strong FL and SFWM asymmetry due to photon–phonon constructive dressing. Moreover, the experimental results suggest the analogy of a spectra asymmetry router with a channel equalization ratio of 96.6%.
We report the multi-Fano interference obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu3+: BiPO4 (7:1, 6:1, 1:1, and 0.5:1) and Eu3+: NaYF4 (1:1/4) crystals. We employ multi-dressed spontaneous four-wave mixing and multi-dressed fluorescence (multi-order) to optimize the strong photon-phonon nested dressing effect resulting in more obvious multi-Fano interference. Firstly, the multi-Fano is produced through interference in continuous and multi-bound states. Secondly, five multi-Fano dips originate from nested five dressings (one photon and four phonons) under symmetrical splitting of 7F1 energy level. We depict that the pure H-phase (0.5:1) sample exhibits the strongest photon-phonon dressed effect (five Fano dips). Further, we investigate high-order non-Hermitian exceptional points in multi-Fano interference by adjusting the ratio of Rabi-frequency to de-phase rate through nested photon and phonon dressing. Our experimental results are validated by theoretical simulations, which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences (multi-channel) router.
We report the symmetry-dependent intensity–noise correlation and the intensity-difference squeezing of spontaneous parametric four-wave mixing (SP-FWM) and fluorescence (FL) hybrid signals from the different phases [hexagonal (H) + tetragonal (T), T + H] of Pr3+: YPO4 and Eu3+: YPO4 crystals. The competition between FL and SP-FWM in hybrid signals determines the amplitude and hybrid line shape of the two-mode and three-mode correlation. The correlation amplitude switches from positive to negative due to strong double dressing caused by a high transition probability and a dipole moment of the (more H + less T)-phase of Pr3+: YPO4. This switching phenomenon is used to realize a metal–oxide semiconductor field-effect transistor-based logic inverter. Furthermore, the line shape of correlation changes from broad to sharp due to weak dressing, transition probability, and a low dipole moment of the (more T + less H)-phase of Pr3+: YPO4. Based on these results, we proposed the model of a tunable correlation filter. Gate position, frequency detuning, and laser power control the amplitude and hybrid line shape. Our experimental results provide an advanced technique of bandwidth contrast of about 0.9%. Such notch filters have potential applications in quantum communications.