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IEEE Journal of Quantum Electronics

Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions

Muhammad Imran, Iqbal Hussain, Muhammad Usman, Usman Javed, Huanrong Fan, Peng Li, Yibin Tian, Yanpeng Zhang

Published Oct 28, 2024• 0 citations
Publisher

Abstract

We report phonon dressing-induced dipole moment alignment of nonpolar ions. Out-of-phase Fluorescence (FL) and in-phase Spontaneous Four-wave Mixing (SFWM) peak alignment are exhibited owing to dressing-assisted fine structure and hyperfine structure crystal field quantization, whereas FL and SFWM dip alignment result from fine structure crystal field and dressing quantization. Moreover, a constant alignment is maintained by adjusting two-dimensional parameters at certain conditions due to level angular momentum quantization. Such investigation can potentially apply to fine/hyperfine structure alignment of nonpolar ions and spectra homogenizers.

DOI
10.1109/jqe.2024.3487502

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We report phonon dressing-induced dipole moment alignment of nonpolar ions. Out-of-phase Fluorescence (FL) and in-phase Spontaneous Four-wave Mixing (SFWM) peak alignment are exhibited owing to dressing-assisted fine structure and hyperfine structure crystal field quantization, whereas FL and SFWM dip alignment result from fine structure crystal field and dressing quantization. Moreover, a constant alignment is maintained by adjusting two-dimensional parameters at certain conditions due to level angular momentum quantization. Such investigation can potentially apply to fine/hyperfine structure alignment of nonpolar ions and spectra homogenizers.
In this paper, we explore the asymmetry observed between the effects of photon–phonon coupling (nested-dressing) and a crystal field (CF) on the fine structure of fluorescence (FL) and spontaneous four-wave mixing (SFWM) in Eu3+: BiPO4 and Eu3+: NaYF4. The competition between the CF and the strong photon–phonon dressing leads to dynamic splitting in two directions. The CF leads to static splitting in one direction under weak phonon dressing. The evolution from strong dressing to weak dressing results in spectral asymmetry. This spectral asymmetry includes out-of-phase FL and in-phase SFWM. Further, the large ratio between the dressing Rabi frequency and the de-phase rate leads to strong FL and SFWM asymmetry due to photon–phonon constructive dressing. Moreover, the experimental results suggest the analogy of a spectra asymmetry router with a channel equalization ratio of 96.6%.
We investigated the photon and phonon alignment for two dressing interaction profile in Eu+3: NaYF4. The evolution from strong to weak interaction alignment can be controlled by time gate width and time gate position, which shows that time gate position seems more sensitive than time gate width, while changing both can make interaction alignment oscillation due to two phonon and one photon quantization. Fluorescence FL signal switch from dip to peak interaction profile due to strong gamma, while the Super-Fluorescence SFWM signal switch from peak to dip interaction profile due to strong Rabi frequency (G). Comparing single laser spectral alignment to two-laser interaction alignment, the FL and SFWM shows dressing peak dip switch (spectral to interaction profile). In contrast, there is no switch in AT (spectral to interaction profile) because, the phase difference of the second laser balances the destructive and constructive dressing quantization’s. Such results can have potential applications in fine and hyper structure interaction alignment in non-polar ion.
We report photon-phonon dressing quantization dependency on polarization. Destructive dressing polarization quantization is exhibited in fluorescence (FL) for narrowband signals, while constructive dominant dressing quantization is exhibited in fluorescence (FL) for broadband signals due to phase perturbation. Furthermore, constructive polarization quantization results due to coexistence of generation and dressing effects in strong and competitive Rabi frequency. Low power also contributes to more dressing polarization quantization, the same as in the FL region (large de-phase rate). Furthermore, linear and circular dressing quantization with polarization quantization shows inverse and direct relationships in the FL and spontaneous four-wave-mixing (SFWM) regions, respectively. Such investigations have potential in alignment of crystal field (CF) redistribution by polarization quantization at the input.
We report super broad non-Hermitian line shape from out-of-phase and in-phase photon-phonon dressing (quantization) in Eu3+: NaYF4 and Eu3+: BiPO4 nanocrystals. The line shape is controlled by changing time gate position, time gate width, power, temperature, sample, photomultiplier tubes, and laser. We observed that the fluorescence (FL) line-shape contrasts are 69.23% for Eu3+: BiPO4 and 43.75% for Eu3+: NaYF4, owing to the stronger out-of-phase photon-phonon dressing (destructive quantization). Moreover, we observed that the spontaneous four-wave mixing (SFWM) line shape was approximately three times wider at 300 K than at 77 K for the [(12:1)-phase] Eu3+: NaYF4 due to more high-frequency in-phase phonon dressing (strong constructive quantization). Furthermore, we showed that the noise line-shape width remains unchanged for Eu3+: BiPO4 (16 nm) and Eu3+: NaYF4 (12 nm) due to out-of-phase and in-phase photon-phonon dressing balance. Such results have potential applications in multi-channel band stop filter.
crystal. Such atomic coherence spectral interaction evolves from out-of-phase fluorescence to in-phase spontaneous four-wave mixing (SFWM) by changing the time gate. The dressing dip switch and three dressing dips of SFWM result from the strong photon-phonon destructive cross- and self-interaction for the hexagonal phase, respectively. More phonon dressing results in the destructive interaction, while less phonon dressing results in the constructive interaction of the atomic coherences. The experimental measurements of the photon-phonon interaction agree with the theoretical simulations. Based on our results, we proposed a model for an optical transistor (as an amplifier and switch).