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Gap-plasmon-enhanced NbN superconducting photon detectors at single-photon level

Yu‐Jung Lu

Published Oct 2, 2024• 0 citations
Publisher

Abstract

Here, we use a novel approach to enhance the visible-light photoresponse in NbN superconducting microwire photon detectors (SMPDs) by integrating them with gap plasmon resonators (GPRs). This talk describes how we observe the plasmonic NbN SMPDs can achieve a 233-fold enhancement in the phonon-electron interaction factor (γ) compared to pristine NbN SMPDs under resonant conditions with illumination at 532 nm. The nonlinear photoresponse in the visible region is attributed to the gap-plasmon resonances that disrupt the Copper pairs that break the superconducting state to normal. In addition, an impressive detection efficiency of 98% was achieved using these plasmonic SMPDs.

DOI
10.1117/12.3025953

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Here, we use a novel approach to enhance the visible-light photoresponse in NbN superconducting microwire photon detectors (SMPDs) by integrating them with gap plasmon resonators (GPRs). This talk describes how we observe the plasmonic NbN SMPDs can achieve a 233-fold enhancement in the phonon-electron interaction factor (γ) compared to pristine NbN SMPDs under resonant conditions with illumination at 532 nm. The nonlinear photoresponse in the visible region is attributed to the gap-plasmon resonances that disrupt the Copper pairs that break the superconducting state to normal. In addition, an impressive detection efficiency of 98% was achieved using these plasmonic SMPDs.
Single-photon detectors have been widely studied for decades because of their unique capability to resolve photon numbers, enabling many applications in quantum information technologies. Compared to other types of single-photon detectors, niobium nitride (NbN) superconducting nanowire single-photon detectors are promising candidates and are commercially available today. However, the absorption coefficient of superconducting NbN in the visible range is typically low, resulting in low quantum efficiency and low signal-to-noise ratios. In the present work, we use a novel approach to enhance the visible-light photoresponse in NbN superconducting microwire photon detectors (SMPDs) by integrating them with gap plasmon resonators (GPRs). This talk describes how we observe the plasmonic NbN SMPDs can achieve a 233-fold enhancement in the phonon-electron interaction factor (γ) compared to pristine NbN SMPDs under resonant conditions with illumination at 532 nm. The nonlinear photoresponse in the visible region is attributed to the gap-plasmon-induced heating that breaks the superconducting state to normal. Our results open new opportunities for ultrasensitive single-photon detection for quantum information processing, quantum optics, imaging, and sensing at visible wavelengths. The detailed mechanisms and possible applications will be discussed. Finally, I will discuss emerging plasmonic platforms based on transition metal nitrides and their potential applications.
With a growing demand for detecting light at the single-photon level in various fields, researchers are focused on optimizing the performance of superconducting single-photon detectors (SSPDs) by using multiple approaches. However, input light coupling for visible light has remained a challenge in the development of efficient SSPDs. To overcome these limitations, we developed a novel system that integrates NbN superconducting microwire photon detectors (SMPDs) with gap-plasmon resonators to improve the photon detection efficiency to 98% while preserving all detector performance features, such as polarization insensitivity. The plasmonic SMPDs exhibit a hot-belt effect that generates a nonlinear photoresponse in the visible range operated at 9 K (∼0.64 T c ), resulting in a 233-fold increase in phonon–electron interaction factor (γ) compared to pristine SMPDs at resonance under CW illumination. These findings open up new opportunities for ultrasensitive single-photon detection in areas like quantum information processing, quantum optics, imaging, and sensing at visible wavelengths.
We deposited niobium nitride (NbN) thin film by radio-frequency (RF) magnetron sputtering on MgO substrate at 800 ºC (with Tc ~15 K). To increase the photodetectivity, we design an Ag nanocube nanoresonator with a strong gap-plasmon resonance in the visible range to further enhance the photoresponsivity by engineering the optical response for the NbN superconducting devices. This is due to the superconducting states are broken down by a localizing strong electromagnetic field. To design the plasmonic nanostructures, we calculated the electromagnetic field distribution of Ag nanocube/Al2O3/NbN structure by finite-difference time-domain (FDTD). We observed a strong plasmonic resonance field which tightly confined in the Al2O3 layer between the Ag nanocube and NbN film at a resonant wavelength of 532 nm. In the end, we will also discuss the detailed working mechanism and the potential application of plasmon-enhanced photodetection in NbN superconducting photodetectors.
This study proposed what we believe to be a novel method for fabricating superconducting nanowire single-photon detectors (SNSPDs) with high efficiency, polarization insensitivity, and ultrafast response. To achieve these properties in niobium nitride (NbN) SNSPDs, the periodic four-split rings (PFSR) were positioned above the nanowires. This design uses the localized surface plasmon resonance to enhance the electric field around nanowires. For an incident light with a wavelength of 1550 nm, the PFSR-SNSPD structure achieved a polarization extinction ratio of 1.0064 and absorptions of 88.94% and 88.37% under TE and TM polarizations, respectively. The nanowire length was reduced by 85% using a meandering nanowire arrangement with a fill factor of 0.074.
We report on superconducting single-photon detectors (SSPDs) based on NbN nanowires and their application to single-photon measurements at telecom wavelengths. The detectors are realized by patterning ultra thin (3 - 5 nm-thick) NbN films into meanders of 100 nm-wide wires. The films are deposited by DC magnetron sputtering at relatively low temperatures (≈500 °C) on MgO and GaAs substrates (as compared to the approach of high-temperature deposition on sapphire). In 5 nm-thick films, TCsas high as 10 K and 11 K have been obtained on GaAs and MgO, respectively (Fig. 1). SSPDs have been fabricated by a two-mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO. The detectors are 5 × 5 μm2in size, and composed of a 100 μm long, 100 nm wide nanowire folded in a meander pattern with filling factor of 40%. Typical room temperature resistivity ρ is of 190 μΩ·cm, and I-V curves at 4.2 K show a critical current density JCof about 6 MA·cm-2, which are state of the art values. Quantum efficiency (QE) was measured illuminating the detectors mounted in a liquid He bath through an optical fiber. Quantum efficiencies >10% are measured at 4.2 K, comparable to best results on sapphire substrates. In particular, SSPDs show a large increase in sensitivity, temporal resolution and maximum counting frequencies as compared to InGaAs avalanche photodiodes.
Superconducting nanowire single photon detectors with an optical resonant cavity structure are fabricated directly on the single crystal substrate. In order to enhance the photons absorption of incident light and improve system detection efficiency (SDE) efficiently, the structure of SNSPD was designed and optimized using the finite-difference time-domain analysis for different kinds of substrates. The NbN-SNSPDs fabricated on different substrates are measured and compared. The SDE of NbN-SNSPD on MgO substrate reaches 66 % at the wavelength of 940nm at a dark count rate of 100 cps by illuminating from the back of the device through single mode optical fiber.