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OSA Advanced Photonics Congress

Integrated Photon Pairs Source Based on Counter-Propagating Spontaneous Four Wave Mixing in a Silicon Nitride Chip

G. J. Rodríguez Becerra, J. S. S. Durán Gómez, P. M. C. Tavares Ramírez, Roberto Ramírez-Alarcón, Mauricio Gómez-Robles, Rafael Salas‐Montiel

Published Jan 1, 2024• 0 citations
Publisher

Abstract

We report the design of an integrated visible-telecom photon pair source based on Counter Propagating Spontaneous Four Wave Mixing (CP-SFWM) in a Silicon Nitride (Si3N4) chip with no need of dispersion profile engineering. Two lasers are pumped at 800 nm and 1550 nm at both ends of the optical fiber, generating signal and idler photons at the same wavelengths but with opposite propagation directions, relative to their corresponding pumps. Moreover, these photons exhibit a spectral bandwidth on the order of MHz, achieved by using a high Q factor ring resonator.

DOI
10.1364/bgpp.2024.jtu1a.24

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We report the design of an integrated visible-telecom photon pair source based on Counter Propagating Spontaneous Four Wave Mixing (CP-SFWM) in a Silicon Nitride (Si3N4) chip with no need of dispersion profile engineering. Two lasers are pumped at 800 nm and 1550 nm at both ends of the optical fiber, generating signal and idler photons at the same wavelengths but with opposite propagation directions, relative to their corresponding pumps. Moreover, these photons exhibit a spectral bandwidth on the order of MHz, achieved by using a high Q factor ring resonator.
We report the design of an innovative visible-telecom photon pair source based on counter-propagating spontaneous four wave mixing (CP-SFWM) in a silicon nitride microring resonator. Unlike previous designs, the proposed integrated source achieves automatic phase matching, eliminating the need for dispersion engineering. By employing two lasers at wavelengths of 800 nm and 1550 nm as pumps on opposite ends of the bus waveguides, the resonator generates signal and idler photons at the same wavelengths as the pumps, but propagating in opposite directions. The photon pairs are produced in high-quality factor resonant modes, exhibiting a purity of 1, a brightness of 118.70pairs⋅s−1⋅mW−2, and bandwidths of 157.9 MHz and 79.7 MHz for signal and idler photons, respectively. Our proposal outperforms previous CP-SFWM designs in terms of spectral properties of the photon pairs, emission rate, and scalability, making it an interesting alternative for the implementation of integrated photon pair sources for photonic networks.
We report the design of an integrated photon pair source based on spontaneous four-wave mixing (SFWM), implemented in an integrated micro-ring resonator in the silicon nitride platform (Si 3 N 4 ). The signal photon is generated with emission at 606 nm and bandwidth of 3.98 MHz, matching the spectral properties of praseodymium ions (Pr), while the idler photon is generated at 1430.5 nm matching the wavelength of a CWDM channel in the E-band. This novel, to the best of our knowledge, device is designed to interact with a quantum memory based on a Y 2 SiO 5 crystal doped with Pr 3+ ions, in which we used cavity-enhanced SFWM along with dispersion engineering to reach the required wavelength and the few megahertz signal photon spectral bandwidth.
We propose integrated photonic sources based on spontaneous four-wave mixing (SFWM) in dispersion engineered silicon nitride (SiN) nanowaveguides capable of generating spectrally-pure polarization-entangled photon-pairs bridging the visible-NIR and telecom bands. A simple silica-clad SiN waveguide design with height 640 nm and width in the range 860–960 nm can generate polarization-entangled photon pairs that simultaneously offers high heralded single photon purity of$>9999% and concurrence upto 0.99, with signal and idler lying in the range99\sim736–740nmand736–740 nm and736–740nmand\sim1460–1560nm,respectively,employingapulsedpump(BW1460–1560 nm, respectively, employing a pulsed pump (BW1460–1560nm,respectively,employingapulsedpump(BW\gtrsim0.25–3THz)ofwavelengthnear0.25–3 THz) of wavelength near0.25–3THz)ofwavelengthnear\sim1−1-1−\mum.Slightlydifferentwaveguideheightof620nmandcorrespondingwaveguidewidthsintherange1040–1180nm,offeringthesamepurityandconcurrencestandards,canalsoaddressvariousquantummemoriesdemonstratedatthevisible−NIRwavelengthsofm. Slightly different waveguide height of 620 nm and corresponding waveguide widths in the range 1040–1180 nm, offering the same purity and concurrence standards, can also address various quantum memories demonstrated at the visible-NIR wavelengths ofm.Slightlydifferentwaveguideheightof620nmandcorrespondingwaveguidewidthsintherange1040–1180nm,offeringthesamepurityandconcurrencestandards,canalsoaddressvariousquantummemoriesdemonstratedatthevisible−NIRwavelengthsof\sim$775–800 nm with a telecom band interface. Such CMOS-compatible on-chip sources of spectrally-pure polarization-entangled photon pairs can potentially be employed in a scalable manner for various optical quantum technologies.
We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of ∼150\sim 150∼150 MHz, enabling the interaction with the hyperfine structure of Er 3+^{3+}3+ ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.
We propose silicon nitride (Si3N4\mathrm{S}{\mathrm{i}}_{3}{\mathrm{N}}_{4}Si3​N4​) nanowaveguide-based CMOS-compatible integrated sources of spectrally pure visible-telecom photon pairs. Our designs are intrinsically devoid of spectral correlations, eradicating the need for narrow-band filtering that reduces the source brightness. Further, the signal photons lie in the visible--near-infrared (vis-NIR) band, which can provide increased heralding efficiency of the idler photon in the telecom band using high-efficiency single-photon detectors. For example, a rectangular-cross-section silica-clad Si3N4\mathrm{S}{\mathrm{i}}_{3}{\mathrm{N}}_{4}Si3​N4​ nanowaveguide with dimensions $680\text{~nm}\ifmmode\times\else\texttimes\fi{}840\text{~nm}$ and length 7 cm provides a heralded single-photon purity of approximately $91\mathrm{%}$ for a pump wavelength of 956.8 nm and a pump bandwidth of 1200 GHz, with the signal and idler lying in the visible and telecom bands at approximately 701701701 nm and approximately 150515051505 nm, respectively, demonstrating a peak spectral brightness of approximately $1.2\ifmmode\times\else\texttimes\fi{}{10}^{4}$ photon pairs/s/nm/mW2\mathrm{pairs}/\mathrm{s}/\mathrm{nm}/{\mathrm{mW}}^{2}pairs/s/nm/mW2 for a linear propagation loss of 0.5 dB/cm. The effect of propagation losses on the purity is also studied for such source designs. We also propose some designs capable of generating high-purity photon pairs to address various specific vis-NIR quantum memory transitions with telecom-band interfacing for long-distance hybrid quantum networks. Such compact on-chip sources could have potential applications in various quantum technologies, such as sensing, simulation, computing, communication, and networking.