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Scientific Reports

Integrated photon pairs source in silicon carbide based on micro-ring resonators for quantum storage at telecom wavelengths

P. M. C. Tavares Ramírez, J. S. S. Durán Gómez, G. J. Rodríguez Becerra, Roberto Ramírez-Alarcón, Mauricio Gómez-Robles, Rafael Salas‐Montiel

Published Aug 1, 2024• 7 citations
Publisher

Abstract

We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of $$\sim 150$$ MHz, enabling the interaction with the hyperfine structure of Er $$^{3+}$$ ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.

DOI
10.1038/s41598-024-67411-0

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We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of ∼150\sim 150∼150 MHz, enabling the interaction with the hyperfine structure of Er 3+^{3+}3+ ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.
We report the design of an integrated photon pair source based on spontaneous four-wave mixing (SFWM), implemented in an integrated micro-ring resonator in the silicon nitride platform (Si 3 N 4 ). The signal photon is generated with emission at 606 nm and bandwidth of 3.98 MHz, matching the spectral properties of praseodymium ions (Pr), while the idler photon is generated at 1430.5 nm matching the wavelength of a CWDM channel in the E-band. This novel, to the best of our knowledge, device is designed to interact with a quantum memory based on a Y 2 SiO 5 crystal doped with Pr 3+ ions, in which we used cavity-enhanced SFWM along with dispersion engineering to reach the required wavelength and the few megahertz signal photon spectral bandwidth.
We report the design of an innovative visible-telecom photon pair source based on counter-propagating spontaneous four wave mixing (CP-SFWM) in a silicon nitride microring resonator. Unlike previous designs, the proposed integrated source achieves automatic phase matching, eliminating the need for dispersion engineering. By employing two lasers at wavelengths of 800 nm and 1550 nm as pumps on opposite ends of the bus waveguides, the resonator generates signal and idler photons at the same wavelengths as the pumps, but propagating in opposite directions. The photon pairs are produced in high-quality factor resonant modes, exhibiting a purity of 1, a brightness of 118.70pairs⋅s−1⋅mW−2, and bandwidths of 157.9 MHz and 79.7 MHz for signal and idler photons, respectively. Our proposal outperforms previous CP-SFWM designs in terms of spectral properties of the photon pairs, emission rate, and scalability, making it an interesting alternative for the implementation of integrated photon pair sources for photonic networks.
Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, in silicon carbide only entanglement of nuclear spins has been reported, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the first demonstration of an entangled photon source in an integrated silicon carbide platform. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0) on the order of 10 − 3 , demonstrating the CMOS-compatible integrated platform as a prospective fully integrated CMOS-compatible single-photon source for quantum applications.
We report the design of an integrated visible-telecom photon pair source based on Counter Propagating Spontaneous Four Wave Mixing (CP-SFWM) in a Silicon Nitride (Si3N4) chip with no need of dispersion profile engineering. Two lasers are pumped at 800 nm and 1550 nm at both ends of the optical fiber, generating signal and idler photons at the same wavelengths but with opposite propagation directions, relative to their corresponding pumps. Moreover, these photons exhibit a spectral bandwidth on the order of MHz, achieved by using a high Q factor ring resonator.
Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of 9×10 3 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g (2) (0)on the order of 10 -3 , demonstrating the SiC platform as a prospective fully integrated, CMOS-compatible single-photon source for quantum applications.
Sources of quantum correlated photons pairs bridging the 3um-4um Mid-infrared (MIR) band and Telecom/Near-Infrared/Visible band are of high importance for quantum technologies. Spontaneous Parametric Down Conversion is generally used for realizing such sources, but requires costly implementation platforms with reduced versatility. Here, we explore the potentialities of Spontaneous Four-Wave Mixing (SFWM) in all-solid Silicon On Insulator (SOI) waveguides thanks to an experimentally validated model and propose designs ensuring the production of correlated photon pairs bridging the 3um-4um Mid-infrared band and Telecom C-band. Choosing a pump with a wavelength in the range 2100nm-2210nm and a pulse duration of 5ps, we quantitatively performed simulations targeting a probability of photon pair generation per pulse of 0.05, and we found realistic conditions of utilization (2cm-length straight waveguides, intra-modal Four Wave Mixing with the fundamental TE00 mode) with a pump peak power in between 9.2mW and 32mW. A first design (wCOM) reaches a signal wavelength as high as 3.905um, which is situated in an atmospheric transparency window, while maintaining an idler in the Telecom C-band, making it of high interest for atmospheric Quantum Key Distribution. Two other designs wCH4 and wNO2 aim precise CH4 and NO2 gas sensing with a signal wavelength of 3265nm and 3461nm respectively. In terms of signal/idler wavelength separation, wCOM attains the value of 2364nm which is well above the current record of ~1125nm obtained in quantum regime with SFWM in all-solid SOI waveguides.