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Purcell Enhancement of a Single T Center Coupled to a Silicon Nanophotonic Cavity

Ulises Felix-Rendon, Adam Johnston, Yu-En Wong, Songtao Chen

Published Jan 1, 2024• 0 citations
Publisher

Abstract

We demonstrate Purcell enhancement of a single T center integrated in a silicon photonic crystal cavity, increasing the fluorescence decay rate by a factor of 6.89 and achieving a photon outcoupling rate of 73.3 kHz.
DOI
10.1364/cleo_fs.2024.ftu3i.1

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Purcell Enhancement of a single T center in a silicon nanophotonic cavity

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Implementation of large-scale quantum networks have the potential to augment the capabilities of existing quantum information technologies. By linking quantum processors over photonic channels, future quantum networks could enable applications such as remote quantum sensing, distributed quantum computing, and secure quantum communication. Atomic defects in solids are readily integrated with photonic structures, making them promising candidates for use in quantum networking devices. In particular, the silicon material platform holds great promise due to the technologically mature silicon electronic and photonic industries. The T center defects in silicon possess telecom O-band optical transitions, as well as long-lived electronic and nuclear spins, making it the focus of particular interest. These spin and optical properties of single T centers, together with their accessibility to the existing integrated electronic and photonic technologies, opening the door to modular long-distance quantum networking technologies built on the T center platform. This work outlines the integration of single T centers with a silicon photonic crystal cavity; we observe cavity-enhanced fluorescence emission, resulting in a decay rate enhancement factor of F = 6.89 compared to the bulk emission rate. Through the use of silicon photonic circuits and an angle-polished fiber for light coupling, we achieve a maximum zero phonon line photon outcoupling rate of 73.3 kHz. The design and fabrication of the nanophotonic cavity used in experiment is detailed. This work represents a major step towards use of the silicon T center as a telecom spin-photon interface in future quantum networking applications.

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The nitrogen vacancy center in diamond in its negative charge state is a promising candidate for quantum optic experiments that require single photon emitters. Important benefits of the NV center are its high brightness and photo-stability, even at room temperature. Engineering the emission properties of NV centers with optical resonators is a widely followed approach to meet the requirements for quantum technological applications, but the effect on non-radiative decay paths is yet to be understood. Here we report on modifying the internal quantum efficiency of a single NV center in a nanodiamond coupled to a 1D photonic crystal cavity. We assess the Purcell enhancement via three independent measurement techniques and perform autocorrelation measurements at elevated excitation powers in confocal microscopy. Employing a three-level model allows us to extract the setup efficiency, individual transition rates and thus the internal quantum efficiency of our system. Combining our results, we find that the enhancement of the radiative decay rate via the Purcell effect results in an internal quantum efficiency of 90 % for cavity-coupled NV centers. Our findings will facilitate the realization of nano-scale single photon sources with near-unity internal quantum efficiencies operating at high repetition rates.

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Implementation of large-scale quantum networks have the potential to augment the capabilities of existing quantum information technologies. By linking quantum processors over photonic channels, future quantum networks could enable applications such as remote quantum sensing, distributed quantum computing, and secure quantum communication. Atomic defects in solids are readily integrated with photonic structures, making them promising candidates for use in quantum networking devices. In particular, the silicon material platform holds great promise due to the technologically mature silicon electronic and photonic industries. The T center defects in silicon possess telecom O-band optical transitions, as well as long-lived electronic and nuclear spins, making it the focus of particular interest. These spin and optical properties of single T centers, together with their accessibility to the existing integrated electronic and photonic technologies, opening the door to modular long-distance quantum networking technologies built on the T center platform. This work outlines the integration of single T centers with a silicon photonic crystal cavity; we observe cavity-enhanced fluorescence emission, resulting in a decay rate enhancement factor of F = 6.89 compared to the bulk emission rate. Through the use of silicon photonic circuits and an angle-polished fiber for light coupling, we achieve a maximum zero phonon line photon outcoupling rate of 73.3 kHz. The design and fabrication of the nanophotonic cavity used in experiment is detailed. This work represents a major step towards use of the silicon T center as a telecom spin-photon interface in future quantum networking applications.
Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large nonradiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.
Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
Monolithic integration of single-photon sources into silicon photonics offers a compelling solution for realizing scalable quantum telecommunication architectures. Among the candidate silicon color centers, the C-center features a zero-phonon emission in the telecom L-band, corresponding to the spectral window of minimum transmission loss in optical fibers. Despite this advantage, isolating single C-centers has remained an unrealized challenge in solid-state quantum optics. In this work, we report the isolation of a single silicon C-center. We enhance the spontaneous emission rate of the zero-phonon line by coupling the single emitter to a nanophotonic crystal cavity, observing a fivefold reduction in the excited-state lifetime compared to bulk conditions, which corresponds to a Purcell factor lower bound of 33. Second-order autocorrelation measurements confirm single-photon emission from the investigated defect, obtaining an optical purity of g(2)(0)=0.23g^{(2)}(0) = 0.23g(2)(0)=0.23 without background correction. Our results establish a native telecom L-band quantum light source in silicon, laying the foundation for ultra-low-loss and long-distance quantum applications.
Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.5-fold reduction of the emitter's lifetime.
The nitrogen vacancy center in diamond in its negative charge state is a promising candidate for quantum optic experiments that require single photon emitters. Important benefits of the NV center are its high brightness and photo-stability, even at room temperature. Engineering the emission properties of NV centers with optical resonators is a widely followed approach to meet the requirements for quantum technological applications, but the effect on non-radiative decay paths is yet to be understood. Here we report on modifying the internal quantum efficiency of a single NV center in a nanodiamond coupled to a 1D photonic crystal cavity. We assess the Purcell enhancement via three independent measurement techniques and perform autocorrelation measurements at elevated excitation powers in confocal microscopy. Employing a three-level model allows us to extract the setup efficiency, individual transition rates and thus the internal quantum efficiency of our system. Combining our results, we find that the enhancement of the radiative decay rate via the Purcell effect results in an internal quantum efficiency of 90 % for cavity-coupled NV centers. Our findings will facilitate the realization of nano-scale single photon sources with near-unity internal quantum efficiencies operating at high repetition rates.