Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
Implementation of large-scale quantum networks have the potential to augment the capabilities of existing quantum information technologies. By linking quantum processors over photonic channels, future quantum networks could enable applications such as remote quantum sensing, distributed quantum computing, and secure quantum communication. Atomic defects in solids are readily integrated with photonic structures, making them promising candidates for use in quantum networking devices. In particular, the silicon material platform holds great promise due to the technologically mature silicon electronic and photonic industries. The T center defects in silicon possess telecom O-band optical transitions, as well as long-lived electronic and nuclear spins, making it the focus of particular interest. These spin and optical properties of single T centers, together with their accessibility to the existing integrated electronic and photonic technologies, opening the door to modular long-distance quantum networking technologies built on the T center platform. This work outlines the integration of single T centers with a silicon photonic crystal cavity; we observe cavity-enhanced fluorescence emission, resulting in a decay rate enhancement factor of F = 6.89 compared to the bulk emission rate. Through the use of silicon photonic circuits and an angle-polished fiber for light coupling, we achieve a maximum zero phonon line photon outcoupling rate of 73.3 kHz. The design and fabrication of the nanophotonic cavity used in experiment is detailed. This work represents a major step towards use of the silicon T center as a telecom spin-photon interface in future quantum networking applications.
Monolithic integration of single-photon sources into silicon photonics offers a compelling solution for realizing scalable quantum telecommunication architectures. Among the candidate silicon color centers, the C-center features a zero-phonon emission in the telecom L-band, corresponding to the spectral window of minimum transmission loss in optical fibers. Despite this advantage, isolating single C-centers has remained an unrealized challenge in solid-state quantum optics. In this work, we report the isolation of a single silicon C-center. We enhance the spontaneous emission rate of the zero-phonon line by coupling the single emitter to a nanophotonic crystal cavity, observing a fivefold reduction in the excited-state lifetime compared to bulk conditions, which corresponds to a Purcell factor lower bound of 33. Second-order autocorrelation measurements confirm single-photon emission from the investigated defect, obtaining an optical purity of g(2)(0)=0.23 without background correction. Our results establish a native telecom L-band quantum light source in silicon, laying the foundation for ultra-low-loss and long-distance quantum applications.
Quantum networking is a crucial technology towards constructing large-scale distributed quantum systems. The structure of photonic link and distributed network nodes allows high-speed and high-fidelity interconnect, enabling various applications such as distributed quantum computing and sensing, as well as secure quantum communications. Optically interfaced solid-sate spins are promising candidates for building a quantum network due to their active spin-photon interfaces, compatibility, and scalability for device integration. Especially for defect spins in silicon, the platform benefits from mature silicon photonic industry, and can access to the integration techniques developed over the past decades. T center in silicon particularly holds great expectations because of the telecom-O band optical interface, ground state doublet spin manifold, and long-lived nuclear spin coherence. Their telecom spin-photon interface provides a direct link between stationary quantum memory and flying qubits that are compatible with the existing telecommunication fiber network infrastructure. This work focuses on investigating cavity quantum electrodynamics (cQED) for cavity-coupled single T centers, its applications in quantum optical control of T center optical properties, and in realizing single-shot spin state readout. The cavity enhanced light-matter interaction mitigates the caveats of T center, such as long radiative lifetime, low Debye-Waller factor, and lack of polarization selection rule for the optical transitions. In this work, by integrating single T centers with a low-loss, small mode volume silicon photonic cavity, we have achieved the Purcell enhancement for boosting the T center fluorescence rate with a factor of 6.89. We build up the theoretical framework based on the Jaynes-Cummings model and Lindblad master equation to explain experimental observations and reveal cQED parameters. The further study on the electronic spin state readout is carried out as the fast, high-fidelity single-shot readout is critical for quantum information processing. Two methods are proposed based on realistic cQED parameters: resonant fluorescence readout in the low-cooperativity regime and spin-dependent cavity-reflection readout for intermediate- and high-cooperativity regimes. Both approaches demonstrate feasibility of high-fidelity (F > 0.95) readout, particularly the reflection readout allows F > 0.99 within a short readout time of 50 μs. This work demonstrates a promising telecom spin-photon interface with high-fidelity readout based on cavity-coupled single T centers in silicon, which are promising candidates for building future large-scale quantum networks.
T centers in silicon could serve as efficient quantum memories based on spin-photon interface. But these emitters have long excited state lifetimes and are therefore dim. We demonstrate high-efficiency single photon emission from the zero-phonon line of a single T center using a nanobeam. The tapered nanobeam features coupling efficiency of 71% into a lensed fiber, enabling an order of magnitude improvement in photon count rates as compared to previously reported values. Consequently, we demonstrate single photon emission from the zero-phonon line, representing the coherent emission from the T center. Our result is an important step towards CMOS-integrated spin-photon interfaces.
Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T-center holds particular promise because it possesses a spin ground state that has long coherence times, but this color center exhibits a long excited state lifetime that results in a low-photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single-photon emission from a single T-center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to couple over 70% of the photons in the nanobeam directly into a single-mode fiber. This efficiency enables us to directly demonstrate single-photon emission from the zero-phonon line, which represents the coherent emission from the T-center. Our results represent an important step toward silicon-integrated spin–photon interfaces for quantum computing and quantum networks.
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.