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Optical and Quantum Sensing and Precision Metrology II

Integrated technologies to enable compact trapped-ion quantum sensors

Robert McConnell

Published Mar 13, 2024• 0 citations
Publisher

Abstract

Trapped ions hold promise as the basis of highly accurate clocks and other quantum sensors. However, many real-world applications for quantum sensing require miniaturized, environmentally robust devices that can operate in the field. The significant experimental overhead imposed by free-space optics for control laser light delivery and collection has been an impediment to truly compact trapped-ion based clocks and sensors. The use of integrated technologies—including photonic waveguides, single-photon avalanche detectors (SPADs) and integrated electronics—provides a potential pathway towards overcoming these obstacles. I will discuss MIT Lincoln Laboratory’s recent efforts in this area, including demonstrations of integrated trapped-ion light delivery and collection and prospects for combining these technologies into a single chip-based trapped-ion reference.

DOI
10.1117/12.3012133

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Trapped ions hold promise as the basis of highly accurate clocks and other quantum sensors. However, many real-world applications for quantum sensing require miniaturized, environmentally robust devices that can operate in the field. The significant experimental overhead imposed by free-space optics for control laser light delivery and collection has been an impediment to truly compact trapped-ion based clocks and sensors. The use of integrated technologies—including photonic waveguides, single-photon avalanche detectors (SPADs) and integrated electronics—provides a potential pathway towards overcoming these obstacles. I will discuss MIT Lincoln Laboratory’s recent efforts in this area, including demonstrations of integrated trapped-ion light delivery and collection and prospects for combining these technologies into a single chip-based trapped-ion reference.
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Trapped-ion qubits have been advantageous in quantum information processing due to their long coherence times and high-fidelity state preparation, logic gate operation, and readout. In recent years, we have fabricated chips with electrodes – for generating the electric field for trapping ions – and photonic waveguides and grating out-couplers – for delivering light to the ions. The integrated photonics can potentially lower the laser power requirement and lead to faster gates; however, there are challenges that need to be overcome for the platform to be beneficial. Here, we demonstrate single and two qubit gates with Sr+ trapped ion qubits, driven by delivering light to the ions both via free space and integrated photonics. We show that robust quantum logic is within reach using the integrated photonic platform, and the approaches we are taking in mitigating current challenges.
Monolithic integration of control technologies for atomic systems presents a promising route to the development of quantum computers and portable quantum sensors. Trapped atomic ions form the basis of high-fidelity quantum information processors and high-accuracy optical clocks, but currently rely on free-space optics for ion control, limiting portability and scalability. Here we demonstrate a surface-electrode ion trap which delivers all wavelengths required for ionization, cooling, coherent operations, and quantum-state preparation and detection of Sr+^{+}+ qubits using integrated waveguides and grating couplers. Laser light from the violet to the infrared is coupled onto the chip via an optical-fiber array, creating an inherently stable optical path that we use to demonstrate qubit coherence resilient to platform vibrations. This demonstration of CMOS-compatible integrated-photonic surface-trap fabrication, robust packaging, and enhanced qubit coherence represents a key advance in the development of portable trapped-ion quantum sensors and clocks, and it lights the way toward the complete, individual control of larger numbers of ions in quantum information processing systems.
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped Sr^{+} ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.