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arXiv:2202.01715 · Physical Review Letters

High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

David Reens, Michael Collins, Joseph S. Ciampi, Dave Kharas, Brian F. Aull, Kevan Donlon, Colin Bruzewicz, Bradley J. Felton, Jules Stuart, Robert Niffenegger, Philip Rich, Danielle Braje, Kevin Kyungbum Ryu, John Chiaverini, Robert McConnell

Published Sep 2, 2022• 34 citations
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Abstract

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped Sr^{+} ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

DOI
10.1103/physrevlett.129.100502

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Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped Sr^{+} ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450 μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
We report on the demonstration of fluorescence detection from a trapped ion using single-photon avalanche photodiodes (SPADs) monolithically integrated with a microfabricated surface ion trap. The SPADs are located below the trapping positions of the ions and designed to detect 370 nm photons emitted from single 174Yb+ and 171Yb+ ions. We achieve an ion/no-ion detection fidelity for 174Yb+ of 0.99 with an average detection window of 7.7(1) ms. We report a dark count rate as low as 1.2 kcps for room temperature operation. The fidelity is limited by laser scatter, dark counts, and heating that prevents holding the ion directly above the SPAD. We measure count rates from each of the contributing sources and fluorescence as a function of ion position. We use the ion as a calibrated light source along with measurements of the active detector area to estimate a SPAD quantum efficiency of 24 ± 1%.
Trapped ions hold promise as the basis of highly accurate clocks and other quantum sensors. However, many real-world applications for quantum sensing require miniaturized, environmentally robust devices that can operate in the field. The significant experimental overhead imposed by free-space optics for control laser light delivery and collection has been an impediment to truly compact trapped-ion based clocks and sensors. The use of integrated technologies—including photonic waveguides, single-photon avalanche detectors (SPADs) and integrated electronics—provides a potential pathway towards overcoming these obstacles. I will discuss MIT Lincoln Laboratory’s recent efforts in this area, including demonstrations of integrated trapped-ion light delivery and collection and prospects for combining these technologies into a single chip-based trapped-ion reference.
State readout of trapped-ion qubits is usually achieved by observing qubit-state-dependent fluorescence from the ion while driving an optical cycling transition with laser light. The integration of photon detectors for fluorescence detection into the ion trap itself may benefit the development of many-qubit setups for applications like quantum computing. Superconducting nanowire single-photon detectors (SNSPDs) are promising candidates for trap-integrated detectors for high-fidelity trapped-ion qubit state readout. However, the strong oscillating electromagnetic fields that are typically used to trap and manipulate ions can affect the function of the SNSPDs significantly. In this work, we demonstrate an improved design to integrate SNSPDs into linear rf ion traps that reduces the susceptibility of the SNSPDs to applied rf trapping potentials. Our measurement results represent an improvement in rf tolerance by an order of magnitude with an increase in operation temperature from 3.5K to 6K compared to previous work.
We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single ^{9}Be^{+} ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector fabricated into the trap structure. The average readout fidelity is 0.9991(1), with a mean readout duration of 46 μs, and is limited by the polarization impurity of the readout laser beam and by off-resonant optical pumping. Because there are no intervening optical elements between the ion and the detector, we can use the ion fluorescence as a self-calibrated photon source to determine the detector quantum efficiency and its dependence on photon incidence angle and polarization.
Monolithic integration of control technologies for atomic systems presents a promising route to the development of quantum computers and portable quantum sensors. Trapped atomic ions form the basis of high-fidelity quantum information processors and high-accuracy optical clocks, but currently rely on free-space optics for ion control, limiting portability and scalability. Here we demonstrate a surface-electrode ion trap which delivers all wavelengths required for ionization, cooling, coherent operations, and quantum-state preparation and detection of Sr+^{+}+ qubits using integrated waveguides and grating couplers. Laser light from the violet to the infrared is coupled onto the chip via an optical-fiber array, creating an inherently stable optical path that we use to demonstrate qubit coherence resilient to platform vibrations. This demonstration of CMOS-compatible integrated-photonic surface-trap fabrication, robust packaging, and enhanced qubit coherence represents a key advance in the development of portable trapped-ion quantum sensors and clocks, and it lights the way toward the complete, individual control of larger numbers of ions in quantum information processing systems.
Although trapped ion technology is well-suited for quantum information science, scalability of the system remains one of the main challenges. One of the challenges associated with scaling the ion trap quantum computer is the ability to individually manipulate the increasing number of qubits. Using micro-mirrors fabricated with micro-electromechanical systems (MEMS) technology, laser beams are focused on individual ions in a linear chain and steer the focal point in two dimensions. Multiple single qubit gates are demonstrated on trapped 171Yb+ qubits and the gate performance is characterized using quantum state tomography. The system features negligible crosstalk to neighboring ions (< 3e-4), and switching speeds comparable to typical single qubit gate times (< 2 us). In a separate experiment, photons scattered from the 171Yb+ ion are coupled into an optical fiber with 63% efficiency using a high numerical aperture lens (0.6 NA). The coupled photons are directed to superconducting nanowire single photon detectors (SNSPD), which provide a higher detector efficiency (69%) compared to traditional photomultiplier tubes (35%). The total system photon collection efficiency is increased from 2.2% to 3.4%, which allows for fast state detection of the qubit. For a detection beam intensity of 11 mW/cm2, the average detection time is 23.7 us with 99.885(7)% detection fidelity. The technologies demonstrated in this thesis can be integrated to form a single quantum register with all of the necessary resources to perform local gates as well as high fidelity readout and provide a photon link to other systems.