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Optics Express

Investigation of zero-phonon line characteristics in ensemble nitrogen-vacancy centers at 1.6 K–300 K

Zhenrong Zhang, Huan Fei Wen, Ziheng Gao, Yanjie Liu, Bo Cao, Hao Guo, Zhonghao Li, Zongmin Ma, Xin Li, Tang Jun, Jun Liu

Published Apr 17, 2024• 2 citations
Publisher

Abstract

The ensemble of nitrogen-vacancy (NV) centers is widely used in quantum information transmission, high-precision magnetic field, and temperature sensing due to their advantages of long-lived state and the ability to be pumped by optical cycling. In this study, we investigate the zero-phonon line behavior of the two charge states of NV centers by measuring the photoluminescence of the NV center at 1.6 K-300 K. The results demonstrate a positional redshift, an increase in line width, and a decrease in fluorescence intensity for the ZPL of NV0 and NV- as the temperature increased. In the range of 10 K to 140 K, the peak shift with high concentrations of NV- revealed an anomaly of bandgap reforming. The peak position undergoes a blueshift and then a redshift as temperature increases. Furthermore, the transformation between NV0 and NV- with temperature changes has been obtained in diamonds with different nitrogen concentrations. This study explored the ZPL characteristics of NV centers in various temperatures, and the findings are significant for the development of high-resolution temperature sensing and high-precision magnetic field sensing in ensemble NV centers.

DOI
10.1364/oe.518322

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Journal of Applied Physics•Apr 15, 2011•122 citations
The ensemble of nitrogen-vacancy (NV) centers is widely used in quantum information transmission, high-precision magnetic field, and temperature sensing due to their advantages of long-lived state and the ability to be pumped by optical cycling. In this study, we investigate the zero-phonon line behavior of the two charge states of NV centers by measuring the photoluminescence of the NV center at 1.6 K-300 K. The results demonstrate a positional redshift, an increase in line width, and a decrease in fluorescence intensity for the ZPL of NV0 and NV- as the temperature increased. In the range of 10 K to 140 K, the peak shift with high concentrations of NV- revealed an anomaly of bandgap reforming. The peak position undergoes a blueshift and then a redshift as temperature increases. Furthermore, the transformation between NV0 and NV- with temperature changes has been obtained in diamonds with different nitrogen concentrations. This study explored the ZPL characteristics of NV centers in various temperatures, and the findings are significant for the development of high-resolution temperature sensing and high-precision magnetic field sensing in ensemble NV centers.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
With the creation of nitrogen (NV) in 1b diamond it is common to find that the absorption and emission is predominantly of negatively charged NV centres. This occurs because electrons tunnel from the substitutional nitrogen atoms to NV to form NV−–N+ pairs. There can be a small percentage of neutral charge NV0 centres and a linear increase of this percentage can be obtained with optical intensity. Subsequent to excitation it is found that the line width of the NV− zero-phonon has been altered. The alteration arises from a change of the distribution of N+ ions and a modification of the average electric field at the NV− sites. The consequence is a change to the Stark shifts and splittings giving the change of the zero-phonon line (ZPL) width. Exciting the NV− centres enhances the density of close N+ ions and there is a broadening of the ZPL. Alternatively exciting and ionizing N0 in the lattice results in more distant distribution of N+ ions and a narrowing of the ZPL. The competition between NV− and N0 excitation results in a significant dependence on excitation wavelength and there is also a dependence on the concentration of the NV− and N0 in the samples. The present investigation involves extensive use of low temperature optical spectroscopy to monitor changes to the absorption and emission spectra particularly the widths of the ZPL. The studies lead to a good understanding of the properties of the NV−–N+ pairs in diamond. There is a critical dependence on pair separation. When the NV−–N+ pair separation is large the properties are as for single sites and a high degree of optically induced spin polarization is attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. With separations of <12 A0 there is even no emission. The deterioration occurs as a consequence of electron tunneling in the excited state from NV– to N+ and an optical cycle that involves NV0. The number of pairs with the smaller separations and poorer properties will increase with the number of nitrogen impurities and it follows that the degree of spin polarization that can be achieved for an ensemble of NV− in 1b diamond will be determined and limited by the concentration of single substitutional nitrogen. The information will be invaluable for obtaining optimal conditions when ensembles of NV− are required. As well as extensive measurements of the NV− optical ZPL observations of Stark effects associated with the infrared line at 1042 nm and the optically detected magnetic resonance at 2.87 GHz are also reported.
Photoluminescence (PL) spectra of single nitrogen vacancy (NV) centers in 50-nm diamond nanocrystals at the zero-phonon line (ZPL) were directly observed using a Fabry-Perot interferometer at cryogenic temperatures. The narrowest linewidth of ZPL was 1.2 GHz (1.9 ± 0.7 GHz on average), comparable to ZPL linewidths in PL spectra reported for NV centers in pure bulk diamond. This observation is important to the application of NV centers for use in quantum communication and computation devices, and in nano-sensing.
With the creation of nitrogen (NV) in 1b diamond it is common to find that the absorption and emission is predominantly of negatively charged NV centres. This occurs because electrons tunnel from the substitutional nitrogen atoms to NV to form NV − –N + pairs. There can be a small percentage of neutral charge NV 0 centres and a linear increase of this percentage can be obtained with optical intensity. Subsequent to excitation it is found that the line width of the NV − zero-phonon has been altered. The alteration arises from a change of the distribution of N + ions and a modification of the average electric field at the NV − sites. The consequence is a change to the Stark shifts and splittings giving the change of the zero-phonon line (ZPL) width. Exciting the NV − centres enhances the density of close N + ions and there is a broadening of the ZPL. Alternatively exciting and ionizing N 0 in the lattice results in more distant distribution of N + ions and a narrowing of the ZPL. The competition between NV − and N 0 excitation results in a significant dependence on excitation wavelength and there is also a dependence on the concentration of the NV − and N 0 in the samples. The present investigation involves extensive use of low temperature optical spectroscopy to monitor changes to the absorption and emission spectra particularly the widths of the ZPL. The studies lead to a good understanding of the properties of the NV − –N + pairs in diamond. There is a critical dependence on pair separation. When the NV − –N + pair separation is large the properties are as for single sites and a high degree of optically induced spin polarization is attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. With separations of <12 A 0 there is even no emission. The deterioration occurs as a consequence of electron tunneling in the excited state from NV – to N + and an optical cycle that involves NV 0 . The number of pairs with the smaller separations and poorer properties will increase with the number of nitrogen impurities and it follows that the degree of spin polarization that can be achieved for an ensemble of NV − in 1b diamond will be determined and limited by the concentration of single substitutional nitrogen. The information will be invaluable for obtaining optimal conditions when ensembles of NV − are required. As well as extensive measurements of the NV − optical ZPL observations of Stark effects associated with the infrared line at 1042 nm and the optically detected magnetic resonance at 2.87 GHz are also reported.
We report on the spectroscopic and laser characterization of negatively charged nitrogen-vacancy (NV−) centers in diamond. Spectroscopic properties such as absorption and emission spectra as well as kinetics were studied, and parameters such as cross-sections and lifetimes were estimated. A vibronic band of NV0 with zero phonon line (ZPL) at 575 nm was detected under 532 nm pulsed excitation due to the photoionization of NV−. Transmission of 532 nm pump pulses saturate around ∼10%, which is much smaller than the theoretical level. Δk/k0 kinetics revealed slow recovery of NV− centers after photoionization under 532 nm pumping, which involved different relaxation channels depending on the probe beam wavelengths. Localization of the electrons in the metastable state of NV0 centers resulted in higher saturated transmission of 632 nm pump.
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV−/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.