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Optics Express

Observation of 12-GHz linewidth of zero-phonon-line in photoluminescence spectra of nitrogen vacancy centers in nanodiamonds using a Fabry-Perot interferometer

Hong-Quan Zhao, Masazumi Fujiwara, Masayuki Okano, Shigeki Takeuchi

Published Nov 22, 2013• 17 citations
Publisher

Abstract

Photoluminescence (PL) spectra of single nitrogen vacancy (NV) centers in 50-nm diamond nanocrystals at the zero-phonon line (ZPL) were directly observed using a Fabry-Perot interferometer at cryogenic temperatures. The narrowest linewidth of ZPL was 1.2 GHz (1.9 ± 0.7 GHz on average), comparable to ZPL linewidths in PL spectra reported for NV centers in pure bulk diamond. This observation is important to the application of NV centers for use in quantum communication and computation devices, and in nano-sensing.

DOI
10.1364/oe.21.029679

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Photoluminescence (PL) spectra of single nitrogen vacancy (NV) centers in 50-nm diamond nanocrystals at the zero-phonon line (ZPL) were directly observed using a Fabry-Perot interferometer at cryogenic temperatures. The narrowest linewidth of ZPL was 1.2 GHz (1.9 ± 0.7 GHz on average), comparable to ZPL linewidths in PL spectra reported for NV centers in pure bulk diamond. This observation is important to the application of NV centers for use in quantum communication and computation devices, and in nano-sensing.
Photoluminescence excitation spectroscopy of nitrogen vacancy (NV) centers in type Ib diamond nanocrystals shows that in spite of spectral diffusion and spin-nonconserving transitions, zero-phonon linewidth as small as 16MHz16\phantom{\rule{0.3em}{0ex}}\mathrm{MHz}16MHz, which is nearly lifetime limited, can be observed at low temperature. Relatively small effects of spectral diffusion have also been observed in a small fraction of NV centers.
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
Abstract Many applications of nitrogen-vacancy (NV) centers in diamond crucially rely on a spectrally narrow and stable optical zero-phonon line transition. Though many impressive proof-of-principle experiments have been demonstrated, much work remains in engineering NV centers with spectral properties that are sufficiently robust for practical implementation. To elucidate the mechanisms underlying their interactions with the environment, we apply multi-dimensional coherent spectroscopy to an NV center ensemble in bulk diamond at cryogenic temperatures. Our spectra reveal thermal dephasing due to quasi-localized vibrational modes as well as ultrafast spectral diffusion on the picosecond timescale. The intrinsic, ensemble-averaged homogeneous linewidth is found to be in the tens of GHz range by extrapolating to zero temperature. We also observe a temperature-dependent Stark splitting of the excited state manifold, relevant to NV sensing protocols.
The ensemble of nitrogen-vacancy (NV) centers is widely used in quantum information transmission, high-precision magnetic field, and temperature sensing due to their advantages of long-lived state and the ability to be pumped by optical cycling. In this study, we investigate the zero-phonon line behavior of the two charge states of NV centers by measuring the photoluminescence of the NV center at 1.6 K-300 K. The results demonstrate a positional redshift, an increase in line width, and a decrease in fluorescence intensity for the ZPL of NV0 and NV- as the temperature increased. In the range of 10 K to 140 K, the peak shift with high concentrations of NV- revealed an anomaly of bandgap reforming. The peak position undergoes a blueshift and then a redshift as temperature increases. Furthermore, the transformation between NV0 and NV- with temperature changes has been obtained in diamonds with different nitrogen concentrations. This study explored the ZPL characteristics of NV centers in various temperatures, and the findings are significant for the development of high-resolution temperature sensing and high-precision magnetic field sensing in ensemble NV centers.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100∘^\circ∘ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on temperature, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in electronic-grade single-crystal diamond.